Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

Shen, Xiao; Zhang, En Xia; Zhang, Cher Xuan; Fleetwood, D.M.; Schrimpf, R.D.; Dhar, Sarit; Ryu, Sei‐Hyung; Pantelides, Sokrates T.

doi:10.1063/1.3554428

Cited by 32 publications

(22 citation statements)

References 24 publications

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“…These defects appear to account for at least some of the increased noise at low temperature [32], [33]. Fluctuations in occupancy of N dopants [189]- [191] may also contribute to the increase in noise magnitude with decreasing temperature that is observed in Fig. 32.…”

Section: F Sic Mos Devicesmentioning

confidence: 84%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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This paper reviews and compares predictions of the Dutta-Horn model of low-frequency excess ( ) noise with experimental results for thin metal films, MOS transistors, and GaN/AlGaN high-electron mobility transistors (HEMTs). For metal films, mobility fluctuations associated with carrier-defect scattering lead to noise. In contrast, for most semiconductor devices, the noise usually results from fluctuations in the number of carriers due to charge exchange between the channel and defects, usually at or near a critical semiconductor/insulator interface. The Dutta-Horn model describes the noise with high precision in most cases. Insight into the physical mechanisms that lead to noise in microelectronic materials and devices has been obtained via total-ionizing-dose irradiation and/or thermal an- nealing, as illustrated with several examples. With the assistance of the Dutta-Horn model, measurements of the noise magnitude and temperature and/or voltage dependence of the noise enable estimates of the energy distributions of defects that lead to noise. The microstructure of several defects and/or impurities that cause noise in MOS devices (primarily O vacancies) and GaN/AlGaN HEMTs (e.g., hydrogenated impurity centers, N vacancies, and/or Fe centers) have been identified via experiments and density functional theory calculations.Index Terms-Border traps, gallium nitride, HEMTs, interface traps, low-frequency noise, MOS devices, noise, oxide traps, radiation response, silicon carbide. 0018-9499

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Section: F Sic Mos Devicesmentioning

confidence: 84%

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Fleetwood

2015

IEEE Trans. Nucl. Sci.

157

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“…Figure 1b shows the puckered structure in which one of the two Si atoms that originally bond to the missing O atom puckers back and bonds with an O atom, forming a 3-fold coordinated O (solid arrow), while the other Si atom retains a Si-dangling bond (dashed arrow). This structure plays a key role in hole-trapping-related phenomena in SiO 2 [10,[20][21][22]. Figure 1c is the new configuration of oxygen vacancy.…”

mentioning

confidence: 97%

“…BTI in Si-MOSFETs has been studied extensively and its atomic origin has been identified as the release of hydrogen from passivated interfacial Si dangling bonds [6]. BTI in SiC-based MOSFETs has been studied by several groups [7][8][9][10] and oxygen vacancy was found to play a pivotal role in hole trapping in negative BTI (NBTI) [10].…”

mentioning

confidence: 99%

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Shen

Dhar

Pantelides

2015

Applied Physics Letters

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MOSFETs based on wide band-gap semiconductors are suitable for operations at high temperature, at which additional atomic-scale processes that are benign at lower temperatures can get activated which results in device degradation. Recently significant enhancement of electron trapping was observed under positive bias in SiC MOSFETs at temperatures higher than 150°C. Here we report first-principle calculations showing that the enhanced electron trapping is associated with thermally activated capturing of a second electron by an oxygen vacancy in SiO 2 , by which the vacancy transforms into a new structure that comprises one Si dangling bond and a bond between a five-fold and a four-fold Si atoms. The results suggest a key role of oxygen vacancies and their structural reconfigurations in the reliability of high-temperature MOS devices.

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“…6,7 There are two possible physical origins of BTI phenomena: trapped charges and mobile ions in the oxides. Charge injection into the electrical defects at and/or near poor SiO 2 /SiC interfaces causes BTI typically characterized by a clockwise hysteresis in bidirectional capacitance-voltage (C-V) curves of MOS capacitors.…”

mentioning

confidence: 99%

Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

Chanthaphan

Hosoi

Nakano

et al. 2013

Applied Physics Letters

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Unusual behavior of bias-temperature instabilities in SiC metal-oxide-semiconductor (MOS) devices is studied. Electrical measurements of SiC-MOS capacitors are used to investigate details of self-generated mobile ions in thermal oxides on 4H-SiC(0001) substrates, such as their polarity, density, distribution, and impact on interface properties. It is found that positive bias-temperature stress (BTS) accumulates self-generated positive mobile ions at the bottom SiO2/SiC interface with an areal density of several 1012 cm−2, and that they induce additional electron trap formation at the interface. Using this knowledge, we demonstrate effective removal of the positive mobile ions with a combination of negative BTS and subsequent etching of the oxide surface.

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Atomic-scale origins of bias-temperature instabilities in SiC–SiO2 structures

Cited by 32 publications

References 24 publications

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

<formula formulatype="inline"><tex Notation="TeX">$1/f$</tex></formula> Noise and Defects in Microelectronic Materials and Devices

Atomic origin of high-temperature electron trapping in metal-oxide-semiconductor devices

Understanding and controlling bias-temperature instability in SiC metal-oxide-semiconductor devices induced by unusual generation of mobile ions

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