Atomic-scale nanowires: physical and electronic structure

Bowler, David R.

doi:10.1088/0953-8984/16/24/r01

Cited by 86 publications

(77 citation statements)

References 355 publications

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“…Experiments on conduction in molecular junctions are becoming more common 3, 4 . Early experiments focused on the absolute conduction and on trends such as dependence on wire length, molecular structure, and temperature.…”

Section: Introductionmentioning

confidence: 99%

Resonant inelastic tunneling in molecular junctions

2006

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Within a phonon-assisted resonance level model we develop a self-consistent procedure for calculating electron transport currents in molecular junctions with intermediate to strong electron-phonon interaction. The scheme takes into account the mutual influence of the electron and phonon subsystems. It is based on the 2 nd order cumulant expansion, used to express the correlation function of the phonon shift generator in terms of the phonon momentum Green function. Equation of motion (EOM) method is used to obtain an approximate analog of the Dyson equation for the electron and phonon Green functions in the case of many-particle operators present in the Hamiltonian. To zero-order it is similar in particular cases (empty or filled bridge level) to approaches proposed earlier. The importance of self-consistency in resonance tunneling situations (partially filled bridge level) is stressed. We confirm, even for strong vibronic coupling, a previous suggestion concerning the absence of phonon sidebands in the current vs. gate voltage plot when the source-drain voltage is small 35 .

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Section: Introductionmentioning

confidence: 99%

Resonant inelastic tunneling in molecular junctions

2006

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“…[1][2][3] Metallic nanowires in the form of atomic strings, [4][5][6][7][8][9][10][11] as well as single-shell or multishell helical tubes [12][13][14] have been actively studied due to their unusual structural and electronic properties, such as giant Young's modulus 15,16 and stepwise variation of electronic conductance with the cross section. [17][18][19][20] Aside from fundamental physical interest, nanowires find their relevance in nanotechnology as the potential interconnects between nanodevices.…”

Section: Introductionmentioning

confidence: 99%

Atomic chains of group-IV elements and III-V and II-VI binary compounds studied by a first-principles pseudopotential method

et al. 2005

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Using the first-principles plane wave pseudopotential method we have studied structural, electronic, and transport properties of atomic chains of group-IV elements and group III-V and group II-VI binary compounds. Several materials which are insulating or semiconducting in bulk are found to be metallic in nanowire structures. Our calculations reveal that monatomic chains of Si, Ge, and Sn elements, and of binary compounds such as InP, GaAs, and AlSb, are stable and metallic. On the other hand, compound wires of BN, SiC, GaN, ZnSe, and several others have semiconducting or insulating properties. Ideal mechanical strength calculations show that some of these atomic chains can sustain strains of up to = 0.3. We have presented ab initio electron transport calculations for Si and AlP linear chain segments in between Al electrodes. Conductance of Si monatomic chains displays some nontrivial features as the number of atoms in the chain is varied or as the chain is strained. In addition to single atomic chain structures, junctions and grid structures of Si are investigated.

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“…A fundamental understanding of these reactions also has substantial implications for further miniaturization of electronic devices [3,4,5]. Theoretical and experimental investigation of ET processes in biological macromolecules such as proteins and DNA lasts more than three decades but it still remains a very active area of research.…”

Section: Introductionmentioning

confidence: 99%

Low-temperature electronic transport through macromolecules and characteristics of intramolecular electron transfer

Zimbovskaya

2005

The Journal of Chemical Physics

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Long distance electron transfer (ET) plays an important part in many biological processes. Also, fundamental understanding of ET processes could give grounds for designing miniaturized electronic devices. So far experimental data on the ET mostly concern ET rates which characterizes ET processes in whole. Here, we develop a different approach which could provide more information about intrinsic characteristics of the long-range intramolecular ET. A starting point of the studies is an obvious resemblance between ET processes and electric transport through molecular wires placed between metallic contacts. Accordingly, the theory of electronic transport through molecular wires is applied to analyze characteristics of a long-range electron transfer through molecular bridges. Assuming a coherent electron tunneling to be a predominant mechanism of ET at low temperatures, it is shown that low-temperature current-voltage characteristics could exhibit a special structure, and the latter contains information concerning intrinsic features of the intramolecular ET. Using the Buttiker dephasing model within the scattering matrix formalism we analyze the effect of dephasing on the electron transmission function and current-voltage curves.

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Atomic-scale nanowires: physical and electronic structure

Cited by 86 publications

References 355 publications

Resonant inelastic tunneling in molecular junctions

Resonant inelastic tunneling in molecular junctions

Atomic chains of group-IV elements and III-V and II-VI binary compounds studied by a first-principles pseudopotential method

Low-temperature electronic transport through macromolecules and characteristics of intramolecular electron transfer

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