Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment

Kolmer, Marek; Godlewski, Szymon; Zuzak, Rafał; Wojtaszek, Mateusz; Rauer, C.; Thuaire, Aurélie; Hartmann, Jean‐Michel; Moriceau, H.; Joachim, Christian; Szymoński, Marek

doi:10.1016/j.apsusc.2013.09.124

Cited by 40 publications

(48 citation statements)

References 25 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The dI/dV spectra for both the n-and the p-type Si(100):H surface do not show signature peaks for surface dangling bond or defect states (see Supplementary Data, Section 2 for details), in agreement with previous spectra [6,30], suggesting that such states do not contribute to the contrast inversion. The effect of tip apex to sample distance on the image was explored as well.…”

Section: Resultssupporting

confidence: 86%

Si(100)-2 × 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

et al. 2015

View full text Add to dashboard Cite

Section: Resultssupporting

confidence: 86%

Si(100)-2 × 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

et al. 2015

View full text Add to dashboard Cite

“…12 The Si samples were slightly p-doped with resistivity of 10.5 Ωcm corresponding to doping level of 10 15 at/cm 3 . In order to obtain the hydrogen terminated reconstructed surface the 200 nm diameter starting wafers undergo a multistep preparation process including wet chemical cleaning and thermal treatment.…”

mentioning

confidence: 99%

The butterfly – a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations

Engelund

Godlewski

Kolmer

et al. 2016

Phys. Chem. Chem. Phys.

Self Cite

View full text Add to dashboard Cite

Dangling bond (DB) arrays on Si(001):H and Ge(001):H surfaces can be patterned with atomic precision and they exhibit complex and rich physics making them interesting from both technological and fundamental perspectives. But their complex behavior often makes scanning tunneling microscopy (STM) images difficult to interpret and simulate. Recently it was shown that low-temperature imaging of unoccupied states of an unpassivated dimer on Ge(001):H results in a symmetric butterfly-like STM pattern, despite the fact that the equilibrium dimer configuration is expected to be a bistable, buckled geometry. Here, based on a thorough characterization of the low-bias switching events on Ge(001):H, we propose a new imaging model featuring a dynamical two-state rate equation. On both Si(001):H and Ge(001):H, this model allows us to reproduce the features of the observed symmetric empty-state images which strongly corroborates the idea that the patterns arise due to fast switching events and provides an insight into the relationship between the tunneling current and switching rates. We envision that our new imaging model can be applied to simulate other bistable systems where fluctuations arise from transiently charged electronic states.

show abstract

“…10 However, most of these experiments were conducted on a metal surface. [17][18][19][20][21][22][23][24] The application of selective highly doped dehydrogenated nanostructures was also proposed. Therefore, the possibility of providing sufficient electronic decoupling of the molecule from the surface started to be explored and this isolation can be achieved when an ultra-thin insulating layer is covering the metal surface.…”

mentioning

confidence: 99%

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

et al. 2015

Self Cite

View full text Add to dashboard Cite

The design and construction of the first prototypical QHC (Quantum Hamiltonian Computing) atomic scale Boolean logic gate is reported using scanning tunnelling microscope (STM) tip-induced atom manipulation on an Si(001):H surface. The NOR/OR gate truth table was confirmed by dI/dU STS (Scanning Tunnelling Spectroscopy) tracking how the surface states of the QHC quantum circuit on the Si(001):H surface are shifted according to the input logical status.

show abstract

Atomic scale fabrication of dangling bond structures on hydrogen passivated Si(001) wafers processed and nanopackaged in a clean room environment

Cited by 40 publications

References 25 publications

Si(100)-2 × 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

Si(100)-2 × 1-H dimer rows contrast inversion in low-temperature scanning tunneling microscope images

The butterfly – a well-defined constant-current topography pattern on Si(001):H and Ge(001):H resulting from current-induced defect fluctuations

Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

Contact Info

Product

Resources

About