Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

Kolmer, Marek; Zuzak, Rafał; Dridi, Ghassen; Godlewski, Szymon; Joachim, Christian; Szymoński, Marek

doi:10.1039/c5nr01912e

Cited by 40 publications

(46 citation statements)

References 36 publications

(81 reference statements)

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“…hydrogen desorption, on the H-Si surface allows creation of DB based circuits for next generation ultimatelyminiaturized low power nanoelectronic devices. [11,12,[15][16][17] Although STM tip induced desorption of hydrogen from the H-Si(100) surface was extensively studied, [16,[18][19][20][21][22][23] the reverse manipulation of selective adsorption of a single hydrogen atom to passivate a silicon DB has not, to our knowledge, been reported so far. In this context, AFM can bring more insights by allowing identification of different tip dynamics [24,25] and probing chemical reactivity at the atomic scale.…”

Section: Introductionmentioning

confidence: 99%

Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

et al. 2017

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We report the mechanically induced formation of a silicon-hydrogen covalent bond and its application in engineering nanoelectronic devices. We show that using the tip of a non-contact atomic force microscope (NC-AFM), a single hydrogen atom could be vertically manipulated. When applying a localized electronic excitation, a single hydrogen atom is desorbed from the hydrogen passivated surface and can be transferred to the tip apex as evidenced from a unique signature in frequency shift curves. In the absence of tunnel electrons and electric field in the scanning probe microscope junction at 0 V, the hydrogen atom at the tip apex is brought very close to a silicon dangling bond, inducing the mechanical formation of a silicon-hydrogen covalent bond and the passivation of the dangling bond. The functionalized tip was used to characterize silicon dangling bonds on the hydrogen-silicon surface, was shown to enhance the scanning tunneling microscope (STM) contrast, and allowed NC-AFM imaging with atomic and chemical bond contrasts. Through examples, we show the importance of this atomic scale mechanical manipulation technique in the engineering of the emerging technology of on-surface dangling bond based nanoelectronic devices.

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Section: Introductionmentioning

confidence: 99%

Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

et al. 2017

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“…10,33 A recent joint experimental and theoretical work has demonstrated the operation of one such device. 35 In that experiment, however, the DB gate was addressed using STM tips, which does not represent a scalable technology. For this to be realized in practice, it would be highly desirable that atomic-scale wiring could be created directly on the surface via a simple procedure.…”

Section: Introductionmentioning

confidence: 99%

Search for a Metallic Dangling-Bond Wire on n-Doped H-Passivated Semiconductor Surfaces

et al. 2016

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We have theoretically investigated the electronic properties of neutral and n-doped dangling bond (DB) quasi-one-dimensional structures (lines) in the Si(001):H and Ge(001):H substrates with the aim of identifying atomicscale interconnects exhibiting metallic conduction for use in on-surface circuitry. Whether neutral or doped, DB lines are prone to suffer geometrical distortions or have magnetic ground-states that render them semiconducting. However, from our study we have identified one exception -a dimer row fully stripped of hydrogen passivation. Such a DB-dimer line shows an electronic band structure which is remarkably insensitive to the doping level and, thus, it is possible to manipulate the position of the Fermi level, moving it away from the gap. Transport calculations demonstrate that the metallic conduction in the DB-dimer line can survive thermally induced disorder, but is more sensitive to imperfect patterning. In * To whom correspondence should be addressed † Centro de Física de Materiales (CFM) ‡ DTU Nanotech ¶ Center for Nanostructured Graphene (CNG) § Donostia International Physics Center (DIPC) Ikerbasque conclusion, the DB-dimer line shows remarkable stability to doping and could serve as a one-dimensional metallic conductor on n-doped samples.

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“…The European Physical Journal Applied Physics positioned at both end of short atomic scale DB wires interacting with the 3 DB dimers of the calculating block of the NOR/OR logic gate [22].…”

Section: -P1mentioning

confidence: 99%

“…This is for example the case for atomic scale transport measurements in a planar configuration on a surface [15], for transport measurements along dangling bond (DB) atomic wires atom by atom constructed on a passivated semi-conductor surface [16][17][18][19] and for molecule mechanics with the expected measurement of the motive power of a single molecule motor [20,21]. For example, a complete test of the functioning of the recent atom by atom constructed NOR/OR Boolean logic gate on Si(1 0 0)H [22] is demanding at least 4 atomic scale electrical access to this gate. On this DB circuit, each of the 2 inputs can be performed by a small molecular switch i.e., a single chemisorbed molecule whose end phenyl interacts (or not) in a butterfly configuration with the corresponding input DB dimer.…”

Section: Introductionmentioning

confidence: 99%

Imaging, single atom contact and single atom manipulations at low temperature using the new ScientaOmicron LT-UHV-4 STM

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Sordes

Kolmer

et al. 2016

Eur. Phys. J. Appl. Phys.

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Abstract. The performances of the new ScientaOmicron LT-UHV 4-STM microscope have been certified by a series of state-of-art STM experiments on an Au(1 1 1) surface at 4.3 K. During the STM operation of the 4 STM scanners (independently or in parallel with an inter tip apex front to front distance down to a few tens of nanometers), a ΔZ stability of about 2 pm per STM was demonstrated. With this LT-UHV 4-STM stability, single Au atom manipulation experiments were performed on Au(1 1 1) by recording the pulling, sliding and pushing manipulation signals per scanner. Jump to contact experiments lead to perfectly linear low voltage I-V characteristics on a contacted single Au ad-atom with no need of averaging successive I-V's. Our results show how this new instrument is exactly 4 times a very precise single tip LT-UHV-STM. Two tips surface conductance measurements were performed on Au(1 1 1) using a lock-in technique in a floating sample mode of operation to capture the Au(1 1 1) surface states via two STM tips dI/dV characteristics.

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Realization of a quantum Hamiltonian Boolean logic gate on the Si(001):H surface

Cited by 40 publications

References 36 publications

Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Atomic White-Out: Enabling Atomic Circuitry through Mechanically Induced Bonding of Single Hydrogen Atoms to a Silicon Surface

Search for a Metallic Dangling-Bond Wire on n-Doped H-Passivated Semiconductor Surfaces

Imaging, single atom contact and single atom manipulations at low temperature using the new ScientaOmicron LT-UHV-4 STM

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