Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Hunnestad, K. A.; Hatzoglou, Constantinos; Vullum, Per Erik; Yan, Zhi; Bourret, Edith; Helvoort, Antonius T. J. van; Selbach, Sverre M.; Meier, Dennis

doi:10.1038/s41467-022-32189-0

Cited by 5 publications

(5 citation statements)

References 51 publications

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“…The parameters were optimized to ensure that the interfaces appear flat and not curved. [ 53 ] The peak at 16 Da in the mass spectrum (see Figure S4, Supporting Information) could correspond to either O + or O 2 2+ . Following the discussion in refs.…”

Section: Methodsmentioning

confidence: 99%

Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

Hunnestad

Schultheiß

et al. 2023

Advanced Materials

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Polar discontinuities, as well as compositional and structural changes at oxide interfaces can give rise to a large variety of electronic and ionic phenomena. In contrast to earlier work focused on domain walls and epitaxial systems, this work investigates the relation between polar discontinuities and the local chemistry at grain boundaries in polycrystalline ferroelectric ErMnO3. Using orientation mapping and scanning probe microscopy (SPM) techniques, the polycrystalline material is demonstrated to develop charged grain boundaries with enhanced electronic conductance. By performing atom probe tomography (APT) measurements, an enrichment of erbium and a depletion of oxygen at all grain boundaries are found. The observed compositional changes translate into a charge that exceeds possible polarization‐driven effects, demonstrating that structural phenomena rather than electrostatics determine the local chemical composition and related changes in the electronic transport behavior. The study shows that the charged grain boundaries behave distinctly different from charged domain walls, giving additional opportunities for property engineering at polar oxide interfaces.

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Section: Methodsmentioning

confidence: 99%

Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

Hunnestad

Schultheiß

et al. 2023

Advanced Materials

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“…Furthermore, in the doped ferroelectric hexagonal manganite Er(Mn,Ti)O 3 it was possible to map the position of the Ti dopants despite their extremely low concentration of 0.04 at. % . Understanding the distribution of these dopants is crucial to model their transport properties for further development of domain-wall electronic devices …”

Section: Ferroelectricity In the Ultrathin Regime: Advanced Character...mentioning

confidence: 99%

“…%. 57 Understanding the distribution of these dopants is crucial to model their transport properties for further development of domain-wall electronic devices. 57 3.2.…”

Section: Atom Probe Tomographymentioning

confidence: 99%

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Ferroelectric Thin Films for Oxide Electronics

Müller

Efe

Sarott

et al. 2023

ACS Appl. Electron. Mater.

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Ferroelectric materials have set in motion numerous ultralow-energy-consuming device concepts that can be integrated into state-of-the-art complementary metal–oxide–semiconductor technology. Their nonvolatile, spontaneous electric polarization makes them promising candidates to control functionalities at the nanoscale with energy-efficient electric fields only. In this spotlight article, we start with a brief introduction to ferroelectric materials, the challenges involving the design of thin films and review the state-of-the-art of their integration into various electronic applications. Revolutionary in situ and operando diagnostic tools allowing the monitoring of the technology-relevant polarization state during the material design, or its operation will be detailed. Concepts such as chiral states in ferroelectrics and neuromorphic-type switching will be addressed to provide a comprehensive view on the evolution of ferroelectric states for the next generation of low-energy-consuming electronics. Finally, we discuss the most recent developments in the field, including the emergence of ferroelectricity at the nanoscale and in two-dimensional systems.

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“…The distribution of dopants, especially the clustering of dopants, significantly affects the performance of semiconductors. [1][2][3][4][5][6][7][8][9][10][11][12] Although the clustering of dopant is common in semiconductors, the fundamental understanding of the origin of the clustering and the effective strategy to modulate it is still lacking.…”

Section: Introductionmentioning

confidence: 99%

Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor

Jia 贾,

Zhou 周,

Jiang 姜

et al. 2024

Chinese Phys. B

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Tuning of the magnetic interaction plays the vital role in reducing the clustering of magnetic dopant in diluted magnetic semiconductors (DMS). Due to the not well understood magnetic mechanism and the interplay between different magnetic mechanism, no efficient and universal tuning strategy is proposed at present. Here, the magnetic interactions and formation energies of isovalent doped (Mn) and aliovalent (Cr) doped LiZnAs are studied based on density functional theory (DFT). It is found that the dopant-dopant distance dependent magnetic interaction is highly sensitive to the carrier concentration and carrier type and can only be explained by the interplay between two magnetic mechanism, i.e. super-exchange and Zener’s p-d exchange model. Thus, the magnetic behavior and clustering of magnetic dopant can be tuned by the interplay between two magnetic mechanisms. The insensitivity of the tuning effect to U parameters suggests that our strategy could be universal to other DMS.

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Atomic-scale 3D imaging of individual dopant atoms in an oxide semiconductor

Cited by 5 publications

References 51 publications

Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

Quantitative Mapping of Chemical Defects at Charged Grain Boundaries in a Ferroelectric Oxide

Ferroelectric Thin Films for Oxide Electronics

Regulating the dopant clustering in LiZnAs-based diluted magnetic semiconductor

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