Ferroelectric Thin Films for Oxide Electronics

Abstract

Ferroelectric materials have set in motion numerous ultralow-energy-consuming device concepts that can be integrated into state-of-the-art complementary metal–oxide–semiconductor technology. Their nonvolatile, spontaneous electric polarization makes them promising candidates to control functionalities at the nanoscale with energy-efficient electric fields only. In this spotlight article, we start with a brief introduction to ferroelectric materials, the challenges involving the design of thin films and review the state-of-the-art of their integration into various electronic applications. Revolutionary in situ and operando diagnostic tools allowing the monitoring of the technology-relevant polarization state during the material design, or its operation will be detailed. Concepts such as chiral states in ferroelectrics and neuromorphic-type switching will be addressed to provide a comprehensive view on the evolution of ferroelectric states for the next generation of low-energy-consuming electronics. Finally, we discuss the most recent developments in the field, including the emergence of ferroelectricity at the nanoscale and in two-dimensional systems.

Defeating depolarizing fields with artificial flux closure in ultrathin ferroelectrics

“…In-plane polarization is, however, incompatible with the coveted state-of-the-art, energy-efficient out-of-plane capacitor device geometry. Thus, the mutually exclusive benefits of out-of-plane and in-plane-polarized ferroelectrics pose a serious obstacle to the ongoing quest for the next generation of oxide electronics 9 , 10 .…”

Influence of the Annealing Environment on the Structure and Ferroelectric Properties of Lead Titanate Thin Films

“…Ferroelectric materials and thin films are widely used in broad application areas such as actuators, transducers, ferroelectric random-access memories (FeRAMs), pyroelectric sensors, energy storage capacitors, solar cells, etc. [1][2][3][4][5][6][7][8][9][10]. Lead titanate (PbTiO 3 ) is a well-known perovskite-type structure of ferroelectric material due to its unique ferroelectric, piezoelectric and pyroelectric properties [4,11,12].…”

“…[1][2][3][4][5][6][7][8][9][10]. Lead titanate (PbTiO 3 ) is a well-known perovskite-type structure of ferroelectric material due to its unique ferroelectric, piezoelectric and pyroelectric properties [4,11,12]. Bulk ceramics of lead titanate are already used in many devices.…”

“…Bulk ceramics of lead titanate are already used in many devices. Meanwhile, PbTiO 3 thin films are a very perspective material and have great potential for use in electronics devices, such as pyroelectric infrared detectors [5,6], capacitors [7], ultrasonic transducers [8], microsensors, actuators [9] and nonvolatile memories (FRAMs) [4][5][6][7][8]. Ferroelectric memories are one of the most promising technologies of future memories.…”

“…Ferroelectric memories are one of the most promising technologies of future memories. Perovskite-type lead titanate has a high Curie temperature (490 • C), large tetragonality (c/a = 1.063), relatively low permittivity, a large pyroelectric coefficient and easy spontaneous polarization [4,9,10,13]. These films are still under intense research due to their unique properties.…”