Atomic-precision advanced manufacturing for Si quantum computing

Bussmann, Ezra; Butera, R. E.; Owen, James H. G.; Randall, John N.; Rinaldi, Steven M.; Baczewski, Andrew David; Misra, Shashank

doi:10.1557/s43577-021-00139-8

Cited by 24 publications

(16 citation statements)

References 49 publications

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“…Atomic precision (AP) placement of individual dopant atoms in Si nanoelectronic devices is a promising avenue for realizing a variety of technologies ranging from analog quantum simulators [1][2][3][4][5][6], to qubits [7][8][9][10][11][12][13], to digital electronics [14,15]. This paper considers a particular limitation of AP donor placement with scanning tunneling microscope (STM) lithography [16][17][18] (see Fig.…”

Section: Introductionmentioning

confidence: 99%

The impact of stochastic incorporation on atomic-precision Si:P arrays

Ivie,

Campbell,

Koepke

et al. 2021

Preprint

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Scanning tunneling microscope lithography can be used to create nanoelectronic devices in which dopant atoms are precisely positioned in a Si lattice within ∼1 nm of a target position. This exquisite precision is promising for realizing various quantum technologies. However, a potentially impactful form of disorder is due to incorporation kinetics, in which the number of P atoms that incorporate into a single lithographic window is manifestly uncertain. We present experimental results indicating that the likelihood of incorporating into an ideally written three-dimer singledonor window is 63 ± 10% for room-temperature dosing, and corroborate these results with a model for the incorporation kinetics. Nevertheless, further analysis of this model suggests conditions that might raise the incorporation rate to near-deterministic levels. We simulate bias spectroscopy on a chain of comparable dimensions to the array in our yield study, indicating that such an experiment may help confirm the inferred incorporation rate.

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Section: Introductionmentioning

confidence: 99%

The impact of stochastic incorporation on atomic-precision Si:P arrays

Ivie,

Campbell,

Koepke

et al. 2021

Preprint

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“…Halogens have attracted the most attention, and promising results have been demonstrated in recent studies [44,45]. Similar applications with HDL could be seen in the manufacturing of next-generation nano devices such as single-electron transistors [46], quantum computer qubits [47][48][49], editable atomic-scale memories [50], and two-dimensional quantum metamaterials [51]. Considering the throughput of HDL as a largest barrier to commercial use, Randall et al [52] explored the feasibility of enhancing the throughput via a straightforward, highly parallel exposure system with sub-1 nm resolution.…”

Section: Research Statusmentioning

confidence: 86%

Scanning Probe Lithography: State-of-the-Art and Future Perspectives

et al. 2022

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High-throughput and high-accuracy nanofabrication methods are required for the ever-increasing demand for nanoelectronics, high-density data storage devices, nanophotonics, quantum computing, molecular circuitry, and scaffolds in bioengineering used for cell proliferation applications. The scanning probe lithography (SPL) nanofabrication technique is a critical nanofabrication method with great potential to evolve into a disruptive atomic-scale fabrication technology to meet these demands. Through this timely review, we aspire to provide an overview of the SPL fabrication mechanism and the state-the-art research in this area, and detail the applications and characteristics of this technique, including the effects of thermal aspects and chemical aspects, and the influence of electric and magnetic fields in governing the mechanics of the functionalized tip interacting with the substrate during SPL. Alongside this, the review also sheds light on comparing various fabrication capabilities, throughput, and attainable resolution. Finally, the paper alludes to the fact that a majority of the reported literature suggests that SPL has yet to achieve its full commercial potential and is currently largely a laboratory-based nanofabrication technique used for prototyping of nanostructures and nanodevices.

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“…Atomic-precision advanced manufacturing (APAM) is a suite of techniques for fabricating Si nanoelectronic devices for applications ranging from analog quantum simulators, [1][2][3][4][5][6][7] to qubits, [8][9][10][11][12][13][14] to digital electronics. 15,16 APAM-fabricated devices are comprised of lithographically defined dopant structures with features that nominally have resolutions at the limit of a single-atomic site (±3.8 Å).…”

Section: Introductionmentioning

confidence: 99%

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Campbell¹,

Koepke²,

Ivie³

et al. 2022

Preprint

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Atomic-precision advanced manufacturing enables the placement of dopant atoms within ±1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH 3 dissociation leading to P incorporation on Si(100)-2×1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2×3 silicon

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Atomic-precision advanced manufacturing for Si quantum computing

Cited by 24 publications

References 49 publications

The impact of stochastic incorporation on atomic-precision Si:P arrays

The impact of stochastic incorporation on atomic-precision Si:P arrays

Scanning Probe Lithography: State-of-the-Art and Future Perspectives

Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

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