Robust incorporation in multi-donor patches created using atomic-precision advanced manufacturing

Abstract

Atomic-precision advanced manufacturing enables the placement of dopant atoms within ±1 lattice site in crystalline Si. However, it has recently been shown that reaction kinetics can introduce uncertainty in whether a single donor will incorporate at all in a minimal 3-dimer lithographic window. In this work, we explore the combined impact of lithographic variation and stochastic kinetics on P incorporation as the size of such a window is increased. We augment a kinetic model for PH 3 dissociation leading to P incorporation on Si(100)-2×1 to include barriers for reactions across distinct dimer rows. Using this model, we demonstrate that even for a window consisting of 2×3 silicon