Atomic layer etching of SiO2 using trifluoroiodomethane

Kim, Seon Yong; Park, In Sung; Ahn, Jinho

doi:10.1016/j.apsusc.2022.153045

Cited by 12 publications

(5 citation statements)

References 26 publications

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“…In practical breakthrough experiments, the effect of competitive adsorption can be evaluated using the dynamic separation factor (S D ) 34 calculated with Equation (5).…”

Section: Calculation Of Separation Factor and Dynamic Separation Factormentioning

confidence: 99%

“…As semiconductor devices are being reduced to technical nodes below 10 nm, the atomic layer etching (ALE) technique, which can be used to remove materials with atomic precision, is in continuous development. This technique requires ultrapure electronic gases as etching agents 3–5 . In particular, fluoromethane (CH 3 F) has attracted great interest as an environmentally friendly electronic gas because of its stable chemical properties, non‐toxicity, low ozone‐depleting index (zero), and low greenhouse potential.…”

Section: Introductionmentioning

confidence: 99%

“…This technique requires ultrapure electronic gases as etching agents. [3][4][5] In particular, fluoromethane (CH 3 F) has attracted great interest as an environmentally friendly electronic gas because of its stable chemical properties, non-toxicity, low ozone-depleting index (zero), and low greenhouse potential. Recently, it has been utilized in the etching and cleaning processes of large-scale integrated circuit chips.…”

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confidence: 99%

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Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas

et al. 2023

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Atomic layer etching (ALE) using the environmentally friendly electronic gas fluoromethane (CH3F) is guided for fabricating nanoscale electronic components. The adsorptive purification of CH3F provide a viable direction to remove trace amounts of impurities to produce highly pure CH3F (>99.9999%) for the ALE process. Herein, to remove trace propane (~100 ppm) in CH3F, we report synergetic thermodynamic and kinetic separation of C3H8/CH3F over glucose‐derived carbon molecular sieve CMS‐T, (T as pyrolysis temperature). With pore size slightly larger than the kinetic diameter of C3H8, CMS‐600 allows both strong confined adsorption of C3H8 and a higher diffusion rate of C3H8 over CH3F, resulting in a remarkable separation factor of 51.1. Breakthrough experiment demonstrates a high dynamic production capacity of 457 L kg−1 of 7 N CH3F (<100 ppb of C3H8) over CMS‐600 with excellent cycling stability. Adsorption purification over carbon provides a feasible approach for industrial hyperpurification of electronic gas.

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“…In practical breakthrough experiments, the effect of competitive adsorption can be evaluated using the dynamic separation factor (S D ) 34 calculated with Equation (5).…”

Section: Calculation Of Separation Factor and Dynamic Separation Factormentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

mentioning

confidence: 99%

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Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas

et al. 2023

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“…The low surface roughness is attributed to the absence of fluorine residues on the surface. [51] F I G U R E 9 (a) Surface morphology of the Ru films before etching, after reactive ion etching (RIE) using CF 4 plasma, after atomic layer etching (ALE) using CF 4 plasma, and after ALE using CHF 3 plasma. (b) Root-mean-square (RMS) roughness of Ru films depending on the etching process.…”

Section: Comparison Of Etching Residues and Surface Roughness Of Rie ...mentioning

confidence: 99%

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Kim,

Kang,

et al. 2023

Plasma Processes & Polymers

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The plasma atomic layer etching (ALE) process for Ru was developed with surface fluorination and ion bombardment. We employed two methods for surface fluorination: (i) fluorocarbon deposition using CHF3 or C4F8 plasmas and (ii) chemisorption and diffusion with CF4 plasma. C4F8 plasma generated a more fluorine rich fluorocarbon layer on the Ru surface compared with CHF3 plasma, and a higher etch per cycle (EPC) of 1.5 nm/cycle was achieved with C4F8 plasma, in contrast to the 0.6 nm/cycle achieved with CHF3 plasma. Moreover, chemisorption and diffusion with CF4 plasma yielded an EPC of 1.2 nm/cycle. The ALE process using CHF3 plasma shows the lowest fluorine residue and lowest surface roughness compared with the ALE process using C4F8 and CF4 plasmas.

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“…single reactant must be used. The number of artefacts significantly increases during plasma etching processes [6]. The working pressure in the typical ICP reactor varies from 1 to 100 mTorr [7], and the measurement of absolute concentrations of reactive species in the plasma requires special design of the experimental system [8,9].…”

Section: Introductionmentioning

confidence: 99%

Michaelis–Menten kinetics during dry etching processes

Knizikevičius

2024

PLoS ONE

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The chemical etching of germanium in Br2 environment at elevated temperatures is described by the Michaelis–Menten equation. The validity limit of Michaelis–Menten kinetics is subjected to the detailed analysis. The steady-state etching rate requires synergy of two different process parameters. High purity gas should be directed to the substrate on which intermediate reaction product does not accumulate. Theoretical calculations indicate that maximum etching rate is maintained when 99.89% of the germanium surface is covered by the reaction product, and 99.9999967% of the incident Br2 molecules are reflected from the substrate surface. Under these conditions, single GeBr2 molecule is formed after 30 million collisions of Br2 molecules with the germanium surface.

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Atomic layer etching of SiO2 using trifluoroiodomethane

Cited by 12 publications

References 26 publications

Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas

Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Michaelis–Menten kinetics during dry etching processes

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Atomic layer etching of SiO2 using trifluoroiodomethane

Cited by 12 publications

References 26 publications

Synergetic thermodynamic/kinetic separation of C3H8/CH3F on carbon adsorbents for ultrapure fluoromethane electronic gas

Synergetic thermodynamic/kinetic separation of C3H8/CH3F on carbon adsorbents for ultrapure fluoromethane electronic gas

Plasma atomic layer etching of ruthenium with surface fluorination and ion bombardment

Michaelis–Menten kinetics during dry etching processes

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Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas

Synergetic thermodynamic/kinetic separation of C₃H₈/CH₃F on carbon adsorbents for ultrapure fluoromethane electronic gas