Abstract:We report on the growth and doping of InAs by atomic layer epitaxy (ALE). The InAs layers were grown using ALE cycles in a metal organic chemical vapor deposition reactor, and Si doping of the films was studied for different SiH4 flow sequences. When SiH4 was added to trimethylindium during the group-III step, the silicon concentration in the film was above 5 × 1019 cm−3. When SiH4 was added to tertiarybutylarsine during the group-V step, much lower incorporation of Si was observed. Conformal Si doped InAs lay… Show more
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