Atomic layer epitaxy growth of ZnS Se1− epitaxial layers lattice-matched to Si substrates

Chen, Nyen-Ts; Yokoyama, M.; Ueng, Herng-Yih

doi:10.1016/s0022-0248(00)00433-4

Cited by 5 publications

(2 citation statements)

References 12 publications

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“…High‐quality ZnO films have been obtained by Jiang et al 17 using GaN as a substrate and they noticed excellent optical properties. On the other hand, Chen et al 18 developed nearly defect free ZnS x Se 1− x epitaxial layers on Si substrate using an MOCVD technique and AlN epilayers have been grown by Ito et al 19 on MnO LM substrate. These results motivated us to develop high‐quality and defect‐free SnS films by choosing an appropriate LM substrate.…”

Section: Introductionmentioning

confidence: 99%

The physical properties of SnS films grown on lattice‐matched and amorphous substrates

Devika

Reddy

Prashantha

et al. 2010

Physica Status Solidi (a)

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The development of high-quality tin monosulphide (SnS) layers is one of the crucial tasks in the fabrication of efficient SnSbased optoelectronic devices. Reduction of strain between film and the substrate by using an appropriate lattice-matched (LM) substrate is a new attempt for the growth of high-quality layers. In this view, the SnS films were deposited on LM Al substrate using the thermal evaporation technique with a low rate of evaporation. The as-grown SnS films were characterized using appropriate techniques and the obtained results are discussed by comparing them with the properties of SnS films grown on amorphous substrate under the same conditions. From structural analysis of the films, it is noticed that the SnS films deposited on amorphous substrate have crystallites that were oriented along different directions. However, the SnS crystallites grown on Al substrate exhibited epitaxial growth along the [101] direction. Photoluminescence (PL) and Raman studies reveal that the films grown on Al substrate have better optical properties than those of the films grown on amorphous substrates.

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Section: Introductionmentioning

confidence: 99%

The physical properties of SnS films grown on lattice‐matched and amorphous substrates

Devika

Reddy

Prashantha

et al. 2010

Physica Status Solidi (a)

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“…[1][2][3] Several works have investigated the growth of single-crystal ZnSe layers on GaAs substrates for use as light emitting diodes. [5][6][7][8] In addition, ZnSe is a promising material for use in windows, lenses, output couplers, beam expanders, optically controlled switches, visible transmission systems, and giant photoresistivity systems. [5][6][7][8] In addition, ZnSe is a promising material for use in windows, lenses, output couplers, beam expanders, optically controlled switches, visible transmission systems, and giant photoresistivity systems.…”

Section: Introductionmentioning

confidence: 99%

Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate

Huang

Weng

Ueng

2010

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Initial growth stage evaluation of high quality ZnSe films deposited on a glass substrate was investigated. The self-limiting monolayer epitaxial process was used to pregrowth the buffer layer for a zinc selenide (ZnSe) film deposited. After alternating depositions for several cycles, the growth mode was changed to the molecular beam deposition mode under growth conditions. Films deposited at substrate temperatures of 250-350 degrees C and Se/Zn beam equivalent pressure ratios of 0.77-1.87 were investigated. The crystal structure and the preferred orientation of as-grown ZnSe films were examined using x-ray diffraction patterns. The optical properties of the ZnSe films were revealed by photoluminescence spectra. The characteristics of the ZnSe films with and without a buffer layer were compared and discussed in detail. Finally, the results demonstrate how the quality of ZnSe film can be improved on glass substrates for application to various devices

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Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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Atomic layer epitaxy growth of ZnS Se1− epitaxial layers lattice-matched to Si substrates

Cited by 5 publications

References 12 publications

The physical properties of SnS films grown on lattice‐matched and amorphous substrates

The physical properties of SnS films grown on lattice‐matched and amorphous substrates

Initial growth stage evaluation of high quality ZnSe films deposited on glass substrate

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

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