Atomic Layer Epitaxy Growth of AIN Thin Films

Elers, Kai‐Erik; Ritala, Mikko; Leskelä, Markku; Johansson, Leena‐Sisko

doi:10.1051/jphyscol:19955120

Cited by 17 publications

(16 citation statements)

References 3 publications

(3 reference statements)

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“…Such non-uniformity was observed in an AlN film deposited by ALD where oxygen residues in the nitrogen carrier gas were causing the deposition of AlO x N y . [28] Two distinct zones were observed on the substrate; the first zone comprised an amorphous AlO x N y film, while the second comprised an AlN film that was oxidized only on the surface. Because the depositions were made in the cross-flow reactor, the influence of the impurity concentration was easy to study.…”

Section: Precursor Impuritiesmentioning

confidence: 98%

Film Uniformity in Atomic Layer Deposition

Elers

Blomberg

Peussa

et al. 2006

Chemical Vapor Deposition

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108

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The sources of non-uniformity in thin films produced using atomic layer deposition (ALD) have been investigated by reviewing the mechanical hardware of ALD reactors, precursors, and the by-products of surface reactions. The most common causes of non-uniformity are overlapping pulses, thermal self-decomposition of precursors, and non-uniform gas distribution. Less studied, however, are the consequences of downstream surface reactions of gaseous by-products. In particular, titanium nitride films have been found to be significantly less uniform than those of transition metal oxides deposited from metal halides. The influence of reaction by-products on the TiN film growth has been studied by comparing the deposition in the cross-flow and showerhead style reactors. Finally, the sources of non-uniformity in plasma enhanced (PE) ALD are illustrated by studying the TiN deposition process.

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Section: Precursor Impuritiesmentioning

confidence: 98%

Film Uniformity in Atomic Layer Deposition

Elers

Blomberg

Peussa

et al. 2006

Chemical Vapor Deposition

Self Cite

108

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“…23 Only a few publications exist on the deposition of AlN from AlCl 3 . The thermal deposition of AlN from NH 3 was investigated by Elers et al 24 and Jokinen et al 25 two decades ago and more recently by Lee et al 26,27 using Ar/H 2 / NH 3 plasma. The results showed a large concentration of Cl impurities in the thermal ALD AlN films from AlCl 3 , whereas the PEALD AlN films had a very low impurity concentration with a preferential orientation of the AlN [002] axis normal to the silicon substrate (100) surface.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of AlN from AlCl3 using NH3 and Ar/NH3 plasma

Rontu

Sippola

Broas

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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The atomic layer deposition (ALD) of AlN from AlCl 3 was investigated using a thermal process with NH 3 and a plasma-enhanced (PE)ALD process with Ar/NH 3 plasma. The growth was limited in the thermal process by the low reactivity of NH 3 , and impractically long pulses were required to reach saturation. Despite the plasma activation, the growth per cycle in the PEALD process was lower than that in the thermal process (0.4 Å vs 0.7 Å). However, the plasma process resulted in a lower concentration of impurities in the films compared to the thermal process. Both the thermal and plasma processes yielded crystalline films; however, the degree of crystallinity was higher in the plasma process. The films had a preferential orientation of the hexagonal AlN [002] direction normal to the silicon (100) wafer surface. With the plasma process, film stress control was possible and tensile, compressive, or zero stress films were obtained by simply adjusting the plasma time.

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“…The result suggested that crystalline film was deposited with the preferred orientation along the [0 0 0 1] direction, and the film grown on 8 • off-axis epitaxial SiC layer showed the better crystallinity. Elers et al have demonstrated that at the deposition temperature of 500 • C, the AlN film with partial crystalline wurtzite could be grown on glass substrates via ALD using aluminum trichloride (AlCl 3 ) and NH 3 [46]. In this work, the 4H-SiC (0 0 0 1) substrate provided a superior template compared to glass substrates for growing wurtzite AlN because of similar atomic arrangements and lattice constants of SiC and AlN, thus it was possible to deposit the crystalline film.…”

Section: Resultsmentioning

confidence: 99%