Atomic layer doping of SiGe by low pressure (rapid thermal) chemical vapor deposition

Tillack, Bernd; Krüger, D.; Gaworzewski, P.; Ritter, G.

doi:10.1016/s0040-6090(96)09461-8

Cited by 12 publications

(10 citation statements)

References 8 publications

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“…It was reported that the saturation P coverage is 1/4 of the number of the Si surface atoms (6:8 Â 10 14 cm À2 ) at 300 C, because the dissociative adsorption of PH 3 consumes four surface sites. 53) It was also reported that the P coverage becomes lower under high pressure of H 2 54,55) because of the adsorption of hydrogen even at 350 C. However, in the present case, the P atom concentration by the PH 3 exposure to the hydrogen-free Si surface is about 5 Â 10 14 cm À2 , which is higher than the reported value. It should be noted that the used PH 3 partial pressure is three or four orders of magnitude higher than in the report.…”

Section: Invited Review Papercontrasting

confidence: 65%

“…Atomic layer doping (ALD) is performed by epitaxial growth over the material already-formed on Si(100) or SiGe(100) surface. [9][10][11]54,55) The heteroepitaxial growth of the Si/half atomic layer of N/Si(100), 10,[56][57][58] the Si/half atomic layer of P/Si(100), 10,59,60) the SiGe/single atomic layer of B/SiGe(100), 15,54,55) the SiGe/0.8 atomic layer of C/SiGe(100) 11) and the Si/0.03 atomic layer of W/ Si(100) 61,62) has been achieved. In this section, atomic layer doping of N, P, and B are reviewed and the characteristics are discussed.…”

Section: Atomic Layer Doping In Si and Sige Epitaxial Growthmentioning

confidence: 99%

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Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

112

153

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One of the main requirements for Si-based ultrasmall devices is atomic-order control of process technology. Here we show the concept of atomically controlled processing for group IV semiconductors based on atomic-order surface reaction control. By ultraclean low-pressure chemical vapor deposition using SiH 4 and GeH 4 gases, high-quality low-temperature epitaxial growth of Si, Ge, and Si 1Àx Ge x with atomically flat surfaces and interfaces on Si (100) is achieved, and atomic-order surface reaction processes on group IV semiconductor surface are formulated based on a Langmuir-type surface adsorption and reaction scheme. In in-situ doped Si 1Àx Ge x epitaxial growth on the (100) surface in a SiH 4 -GeH 4 -dopant (PH 3 , or B 2 H 6 or SiH 3 CH 3 )-H 2 gas mixture, the deposition rate, the Ge fraction and the dopant concentration are explained quantitatively assuming that the reactant gas adsorption/reaction depends on the surface site material and that the dopant incorporation in the grown film is determined by Henry's law. Self-limiting formation of 1-3 atomic layers of group IV or related atoms in the thermal adsorption and reaction of hydride gases on Si(100) and Ge (100) is generalized based on the Langmuir-type model. Si or SiGe epitaxial growth over N, P or B layer already-formed on Si(100) or SiGe(100) surface is achieved. Furthermore, the capability of atomically controlled processing for advanced devices is demonstrated. These results open the way to atomically controlled technology for ultralarge-scale integrations.

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Section: Invited Review Papercontrasting

confidence: 65%

Section: Atomic Layer Doping In Si and Sige Epitaxial Growthmentioning

confidence: 99%

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Murota

Sakuraba

Tillack

2006

jjap

112

153

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“…The details of the deposition process can be found elsewhere. 13 The concentration of Ge ranged from x ϭ 0 to x ϭ 0.3 while C concentration varied from y ϭ 0 to y ϭ 0.015. Epilayer thicknesses ranged between 130 nm and 150 nm.…”

Section: Methodsmentioning

confidence: 99%

“…We used epilayers doped either with phosphorous, (N D ϭ 5 ϫ 10 16 cm Ϫ3 ) or with boron (N A ϭ 5 ϫ 10 17 cm Ϫ3 ). 13 In both cases, samples were doped during growth, and their doping concentration checked by spreading resistance. The gate oxides were thermally grown at 900°C for N-doped samples and at 830°C for P-doped samples.…”

Section: Methodsmentioning

confidence: 99%

Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitors

Cuadras

Garrido

Morante

et al. 2004

Journal of Elec Materi

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“…There have been indications that the partial pressure of hydrogen during the adsorption step also has an influence on the P coverage (20). For high partial pressures of H 2 , the adsorption of hydrogen could make a significant contribution, even if the equilibrium constant of the surface adsorption of H 2 is very small.…”

Section: Selective Deposition Of Polycrystalline Si and Sige Induced mentioning

confidence: 99%

Atomic Layer Doping for Future Si Based Devices

Tillack¹,

Yamamoto²

2009

ECS Trans.

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The concept of atomic-level processing based on atomic-order surface reaction control is discussed. The main idea of the atomic layer approach is the control of the process by surface reactions at very low temperatures (even at room temperature). Results of B and P atomic layer doping of Si, Ge and SiGe are reviewed and discussed focussing on the control of the surface adsorption by changing temperatures and partial pressures of the dopant gases. For B atomic layer doping of SiGe and pure Ge using B 2 H 6 , high doping levels and steep doping profiles have been reached. The process was found to be self-limited at ~100°C indicating preferred adsorption of B 2 H 6 on Si and Ge sites and suppression of B cluster formation. In the case of B atomic layer doping of Si it is shown that the technique can be used for the selective deposition of polycrystalline Si. For P atomic layer doping of SiGe selflimitation of the process has been observed for temperatures between 200-550°C allowing very precise dopant dose and location control. IntroductionFuture silicon based integrated circuits technology is targeting on reduced transistor dimensions, increased transistor counts and increased operating frequencies. By reaching the nanometer scale region lateral and vertical structures have to be processed which are close to atomic dimensions. Moreover emerging research devices and technologies are under investigation to extend the CMOS technology further on or to evaluate solutions for beyond Si CMOS technologies like introducing Ge or III-V material channel replacement (1). According to the ITRS the alternative "More Than Moore" approach is targeting on diversification by combining different technologies based on a reasonable scaling level. As well for the further scaling (ITRS "More Moore" approach) as for the "More Than Moore" approach novel concepts for processing technologies are requested. For the formation of nanometer scale structures atomic-order control of future process technology for device fabrication needs to be developed. Very low temperature processing is required allowing creation and control of vertical and lateral structures at atomic level and the integration of new materials for emerging device concepts.Here we discuss the concept of atomic-level processing for doping of Si, SiGe and Ge based on atomic-order surface reaction control. The main idea of the atomic layer approach is the idea to control the process by surface reactions at very low temperatures 121 ) unless CC License in place (see abstract). ecsdl.org/site/terms_use address. Redistribution subject to ECS terms of use (see 137.99.43.51 Downloaded on 2015-06-24 to IP (even at room temperature). By processing at low temperature the adsorption of reactant gases at the surface can be separated from the reaction process. By this way the process is controlled by the surface adsorption equilibrium only. The atomic layer processing approach has been demonstrated for the adsorption of different hydride gases on Si (100) and Ge (100) (2-11). Very low process ...

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Atomic layer doping of SiGe by low pressure (rapid thermal) chemical vapor deposition

Cited by 12 publications

References 8 publications

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Atomically Controlled Processing for Group IV Semiconductors by Chemical Vapor Deposition

Impact of carbon concentration on the interface density of states of metal-oxide Si1−x−y GexCy (strained) capacitors

Atomic Layer Doping for Future Si Based Devices

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