Atomic Layer Deposition: Overview and Applications

Abstract

Atomic layer deposition(ALD) is a promising deposition method and has been studied and used in many different areas, such as displays, semiconductors, batteries, and solar cells. This method, which is based on a self-limiting growth mechanism, facilitates precise control of film thickness at an atomic level and enables deposition on large and three dimensionally complex surfaces. For instance, ALD technology is very useful for 3D and high aspect ratio structures such as dynamic random access memory(DRAM) and other non-volatile memories(NVMs). In addition, a variety of materials can be deposited using ALD, oxides, nitrides, sulfides, metals, and so on. In conventional ALD, the source and reactant are pulsed into the reaction chamber alternately, one at a time, separated by purging or evacuation periods. Thermal ALD and metal organic ALD are also used, but these have their own advantages and disadvantages. Furthermore, plasma-enhanced ALD has come into the spotlight because it has more freedom in processing conditions; it uses highly reactive radicals and ions and for a wider range of material properties than the conventional thermal ALD, which uses H 2 O and O 3 as an oxygen reactant. However, the throughput is still a challenge for a current time divided ALD system. Therefore, a new concept of ALD, fast ALD or spatial ALD, which separate half-reactions spatially, has been extensively under development. In this paper, we reviewed these various kinds of ALD equipment, possible materials using ALD, and recent ALD research applications mainly focused on materials required in microelectronics.

Characteristics of layered tin disulfide deposited by atomic layer deposition with H2S annealing

“…The ALD method involves self-limiting reactions on the substrate surface with precise control of film thickness, high conformality, and high film crystallinity. 19 Thus, ALD is considered to be a good candidate for synthesizing 2D materials. In addition, we conducted post-deposition annealing to improve the crystallinity of SnS 2 with an H 2 S and Ar gas mixture.…”

Tuning the Band Structure of Zn-Doped SnS2 Nanosheet-Based Thin Films by Atomic Layer Deposition for Photoelectric Devices

“…26,38 Here, we describe the fabrication of zinc-doped SnS 2 nanosheet-based thin films using atomic layer deposition (ALD) in a cycle consisting of a precursor pulse-purge-reactant pulse-purge step and separate injections of the precursor and reactant. 31,32 The content of impurities other than zinc in the film was minimal due to the use of a bypass process in the middle of the cycle. In addition, due to the self-limited reactions on the surface, it was possible to precisely control the nanoscale thickness compared to other fabrication processes.…”