Atomic layer deposition growth of SnS2 films on diluted buffered oxide etchant solution-treated substrate

Lee, Namgue; Lee, Gunwoo; Choi, Hyun-Woong; Park, Hyun-Woo; Choi, Yeonsik; Kim, Keunsik; Choi, Yeongtae; Kim, Jong Woo; Yuk, Hyunwoo; Sul, Onejae; Lee, Seung Beck; Jeon, Hyeongtag

doi:10.1016/j.apsusc.2019.143689

Cited by 14 publications

(17 citation statements)

References 46 publications

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“…The FETs exhibited high I on /I off ratios up to 8.3 × 10 6 , whereas their mobilities were still relatively low, 0.06 and 0.08 cm 2 V −1 s −1 for the 4 and 6 ML films (Figure 11j). In a very recent study, Lee et al [243] observed that a buffered oxide etch (BOE) treatment of SiO 2 substrates afforded slight improvements in the FET performance, i.e., a mobility of 0.31 cm 2 V −1 s −1 and an I on /I off ratio of 6.5 × 10 5 compared to 0.22 cm 2 V −1 s −1 and 2.9 × 10 5 on bare SiO 2 . However, due to an increased growth rate, the film grown on BOE-treated SiO 2 was 10 ML thick compared to 7 ML on bare SiO 2 , which can also affect its performance.…”

Section: Field-effect Transistorsmentioning

confidence: 94%

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Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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it was soon replaced by other materials. Research on the fundamental properties and preparation of TMDC monolayers in solution (1986), [8] on single-crystal substrates in ultrahigh vacuum (2001), [9] and in an accessible way using mechanical exfoliation [10] (2005) followed. It was the discovery of graphene in 2004 [11] with its ever expanding list of unique and exciting properties, phenomena, and potential applications [12] that amassed broad attention to 2D materials and resulted in the 2010 Nobel Prize in Physics awarded to Andre Geim and Konstantin Novoselov. Tremendous efforts have been put toward synthesis and applications of graphene, including the billion euro Graphene Flagship project funded by the European Union. [13,14] Graphene is a semimetal, however, and the need to have semiconducting materials for many crucial applications, in particular in electronics, has led researchers to search for other 2D materials. The scientific community turned to TMDCs following breakthroughs in observation of unique thickness-dependent properties, [15,16] monolayer synthesis using chemical vapor deposition (CVD), [17,18] and demonstration of high-performance semiconductor devices [19-21] in 2010-2013 (Figure 1). Indeed, in 2013 the number of scientific publications on TMDCs, in particular MoS 2 , nearly tripled over 2012, and the strong growth has continued to date, fueled by advances in synthesis, new devices, and exciting physical phenomena. The explosive growth in MoS 2 research has also expanded to other TMDCs, [22] resulting in yet new phenomena and potential applications being found. [23-26] It is now clear that TMDCs are remarkable in many ways. Their layered crystal structure gives rise to fundamental physics not seen in 3D materials, which enables novel devices and applications. [25,26,32,34-36] The layered structure also gives TMDCs their highly anisotropic properties, extremely high specific surface areas, possibility to intercalate different species between the layers, and stability as ultrathin sheets down to three atomic layers thick. The TMDC family contains dozens of different materials from semiconductors to semimetals, metals, and even superconductors. [5,22,25,34] However, TMDC research is still mostly in the early discovery stages and the investigations of TMDCs largely continue using flakes produced by mechanical exfoliation of bulk crystals. [10,26] Unfortunately, this method cannot be scaled up for practical 2D transition metal dichalcogenides (TMDCs) are among the most exciting materials of today. Their layered crystal structures result in unique and useful electronic, optical, catalytic, and quantum properties. To realize the technological potential of TMDCs, methods depositing uniform films of controlled thickness at low temperatures in a highly controllable, scalable, and repeatable manner are needed. Atomic layer deposition (ALD) is a chemical gas-phase thin film deposition method capable of meeting these challenges. In this review, the applications evaluated for ALD TMDCs are systematically...

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Section: Field-effect Transistorsmentioning

confidence: 94%

“…partly cryst, ann. ≈10-20 nm) FET [243] 2020 [244] 150 (100 to 350 (multistep), H 2 S) ≈50 nm rough films (≈50 nm) Gas sensor [245] 150 (100 to 350 (multistep), H 2 S) 6 ML films (as-dep. ?, ann.…”

mentioning

confidence: 99%

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Mattinen

Leskelä

Ritala

2021

Adv Materials Inter

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“…However, a low growth temperature is unfavorable for the formation of thermodynamically stable products and defects, and disorder is usually common in lowtemperature growth, which can degrade their electrical properties. Lee et al 153 grew SnS 2 films using Sn(NMe 2 ) 4 and H 2 S at 150 °C and applied multi-step post-growth annealing at 350 °C in a H 2 S environment to improve the crystallinity. Mattinen et al 51 developed an ALD process combined with lower temperature (250 °C) post-deposition annealing by using a new Sn source Sn(OAc) 4 .…”

Section: Synthesismentioning

confidence: 99%

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Yang

Warner

2020

ACS Appl. Electron. Mater.

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Two-dimensional semiconductors with a layered structure are now among the most extensively studied materials. The unique structural form of 2D layered semiconductors provides several benefits over other existing materials as key components in next-generation nanodevices such as transistors, photodetectors, solar cells, light emitting devices, molecular sensors, and optical imaging sensors. However, most of these studies concentrate on narrow bandgap semiconductors (bandgap E g < 2 eV) that emit/absorb in the red and infrared regions. Recently, more research has focused on wide bandgap 2D layered semiconductors, as they have demonstrated great potential in applications in electronics and optoelectronics for the green and blue wavelength regions. This Review summarizes the 2D layered materials that have been experimentally proven as wide bandgap semiconductors, including GaS, GaSe, InSe

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“…Tin disulfide (SnS 2 ) is an intrinsic n‐type semiconductor with a bandgap of 2.1 eV, larger than that of monolayer MoS 2 . [ 272 ] The high bandgap suppresses source/drain tunneling in FETs, affording a high I ON / I OFF of 10 8 . [ 273 ] Furthermore, large electron mobility (230 cm 2 V −1 s −1 ) was demonstrated using adsorbate‐suppressing conditions, indicating its potential for applications in FETs.…”

Section: Ald Of Metal Chalcogenides For Fetsmentioning

confidence: 99%

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

et al. 2022

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Atomic layer deposition (ALD) is a deposition technique well‐suited to produce high‐quality thin film materials at the nanoscale for applications in transistors. This review comprehensively describes the latest developments in ALD of metal oxides (MOs) and chalcogenides with tunable bandgaps, compositions, and nanostructures for the fabrication of high‐performance field‐effect transistors. By ALD various n‐type and p‐type MOs, including binary and multinary semiconductors, can be deposited and applied as channel materials, transparent electrodes, or electrode interlayers for improving charge‐transport and switching properties of transistors. On the other hand, MO insulators by ALD are applied as dielectrics or protecting/encapsulating layers for enhancing device performance and stability. Metal chalcogenide semiconductors and their heterostructures made by ALD have shown great promise as novel building blocks to fabricate single channel or heterojunction materials in transistors. By correlating the device performance to the structural and chemical properties of the ALD materials, clear structure–property relations can be proposed, which can help to design better‐performing transistors. Finally, a brief concluding remark on these ALD materials and devices is presented, with insights into upcoming opportunities and challenges for future electronics and integrated applications.

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Atomic layer deposition growth of SnS2 films on diluted buffered oxide etchant solution-treated substrate

Cited by 14 publications

References 46 publications

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Atomic Layer Deposition of 2D Metal Dichalcogenides for Electronics, Catalysis, Energy Storage, and Beyond

Synthesis and Applications of Wide Bandgap 2D Layered Semiconductors Reaching the Green and Blue Wavelengths

Atomic Layer Deposition of Metal Oxides and Chalcogenides for High Performance Transistors

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