2013
DOI: 10.1063/1.4800928
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Atomic layer deposition of Zn(O,S) thin films with tunable electrical properties by oxygen annealing

Abstract: Zinc oxysulfide, Zn(O,S), films grown by atomic layer deposition (ALD) were annealed in oxygen to adjust the carrier concentration. The electron carrier concentration of Zn(O,S) can be reduced by several orders of magnitude from 10 19 to 10 15 cm -3 by post-deposition annealing in oxygen at temperatures from 200°C to 290°C. In the case of Zn(O,S) with S/Zn = 0.37, despite the considerable change in the electron carrier concentration, the bandgap energy decreased by onlỹ 0.1 eV, and the crystallinity did not ch… Show more

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Cited by 39 publications
(13 citation statements)
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“…10 2 X cm). 17,18,24,33 In the high temperature region, the carrier concentration lowering can be explained by the higher sulfur content of the Zn(O,S) films. Indeed, we can assume that the oxygen vacancies are replaced by sulfur atoms, which reduced donor defects and therefore the n-type carrier concentration of Zn(O,S).…”
Section: Resultsmentioning
confidence: 97%
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“…10 2 X cm). 17,18,24,33 In the high temperature region, the carrier concentration lowering can be explained by the higher sulfur content of the Zn(O,S) films. Indeed, we can assume that the oxygen vacancies are replaced by sulfur atoms, which reduced donor defects and therefore the n-type carrier concentration of Zn(O,S).…”
Section: Resultsmentioning
confidence: 97%
“…The charge carrier concentration of Zn(O,S) films varies in the range of 10 15 À 10 19 cm À3 depending on the deposition temperature and the film composition. 17,24,33 For instance, Park et al measured charge carrier concentrations up to 10 19 cm À3 for Zn(O,S) films synthesized at the deposition temperature of 120 C. 23 Sanders and Kitai also measured values up to 1:7 Â 10 19 cm À3 but at 300 C. 17 Otherwise, the resistivities of the ALD-Zn(O,S) films usually evolve from those of ZnO (10 À3 X cm) to reach high values (! 10 2 X cm).…”
Section: Resultsmentioning
confidence: 98%
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“…The material properties of thin films grown by conventional thermal ALD and plasma-enhanced ALD (PEALD) are generally varied by controlling the deposition parameters, such as the growth temperature, precursor dosing and purging conditions; postannealing conditions; and extrinsic doping/alloying. 2225 An alternative approach is to alter the conventional ALD sequence by incorporating additional reactive plasma/metal precursor steps into the growth cycle, which has been shown to modify the electrical properties of ALD-grown ZnO thin films. 26…”
Section: Introductionmentioning
confidence: 99%