Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si[sub 2]Cl[sub 6] and O[sub 3]

Lee, Seungwon; Park, Kwangchol; Han, Byeol; Son, Sang-Ho; Rha, Sa‐Kyun; Chong-Ook, Park; Lee, Wonjun

doi:10.1149/1.2908201

Cited by 32 publications

(26 citation statements)

References 14 publications

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“…As in the previous report, this indicates that a higher growth temperature may lead to the formation of dense SiO 2 films and that this temperature increase correlates with an increase of breakdown strength [21]. Therefore, rapid SiO 2 thin films had excellent breakdown strength (7 MV AE 0.78) even at the low growth temperature (200 8C), compared with that of plasma enhanced ALD SiO 2 films [3,22] (8-10 MV/cm over 300 8C).…”

Section: Resultssupporting

confidence: 71%

Studies on optical, chemical, and electrical properties of rapid SiO2 atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

Choi

Kim

Chung

et al. 2012

Materials Research Bulletin

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Section: Resultssupporting

confidence: 71%

Studies on optical, chemical, and electrical properties of rapid SiO2 atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

Choi

Kim

Chung

et al. 2012

Materials Research Bulletin

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“…Many ALD processes, with various Si precursors (chlorosilanes or aminosilanes) and oxidants (H 2 O, H 2 O 2 , or O 3 ), were developed for the growth of SiO 2 . Those processes usually require relatively high temperatures (> 150 °C) [12–16]. For processes compatible with thermally sensitive materials such as organic, biological, and polymeric materials, the catalyzed ALD [17–19] and plasma-enhanced atomic layer deposition (PEALD) [9, 20–22] have been used as an effective solution with process temperatures below 100 °C.…”

Section: Introductionmentioning

confidence: 99%

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

et al. 2019

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In this work, we report the successful growth of high-quality SiO 2 films by low-temperature plasma-enhanced atomic layer deposition using an oxidant which is compatible with moisture/oxygen sensitive materials. The SiO 2 films were grown at 90 °C using CO 2 and Bis(tertiary-butylamino)silane as process precursors. Growth, chemical composition, density, optical properties, and residual stress of SiO 2 films were investigated. SiO 2 films having a saturated growth-per-cycle of ~ 1.15 Å/cycle showed a density of ~ 2.1 g/cm 3 , a refractive index of ~ 1.46 at a wavelength of 632 nm, and a low tensile residual stress of ~ 30 MPa. Furthermore, the films showed low impurity levels with bulk concentrations of ~ 2.4 and ~ 0.17 at. % for hydrogen and nitrogen, respectively, whereas the carbon content was found to be below the measurement limit of time-of-flight elastic recoil detection analysis. These results demonstrate that CO 2 is a promising oxidizing precursor for moisture/oxygen sensitive materials related plasma-enhanced atomic layer deposition processes.

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“…Different techniques were used to obtain silica thin films such as plasma-enhanced chemical vapour deposition (PECVD) [4], plasma-assisted reactive magnetron sputtering (PARMS) [5] and atomic layer deposition (ALD) [6]. As flat-plate solar-thermal collectors have polymeric glazing, the high temperature thermal treatment of the thin films does not represent an option.…”

Section: Introductionmentioning

confidence: 99%

$$\hbox {SiO}_{2}\hbox {/TiO}_{2}$$ SiO 2 /TiO 2 multi-layered thin films with self-cleanin

2017

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Self-cleaning, high transmittance glazing was obtained by cold spray deposition for glazings. The thin films contain TiO 2 , SiO 2 and Au nanoparticles in different structures which allow for tailoring the optical, hydrophilic and photocatalytic properties. The crystallinity, morphology and surface energy were correlated with the optical transmittance and reflectance; the transmittance increased from 89.45 (for the glass substrate) to 91.76% when Au nanoparticles were used in the tandem layered structures. The samples containing alternating multi-layered SiO 2 and TiO 2 thin films without gold nanoparticles show hydrophilic surface; for these layers, the photocatalytic efficiency reaches 40% under simulated solar radiation. A conditioning effect based on adsorption was observed to increase the photocatalytic efficiency. These highly transparent coatings are well suited for glazings and fenestration, showing the self-cleaning effect based on combined superhydrophilicity and photocatalysis.

show abstract

Atomic Layer Deposition of Silicon Oxide Thin Films by Alternating Exposures to Si[sub 2]Cl[sub 6] and O[sub 3]

Cited by 32 publications

References 14 publications

Studies on optical, chemical, and electrical properties of rapid SiO2 atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

Studies on optical, chemical, and electrical properties of rapid SiO2 atomic layer deposition using tris(tert-butoxy)silanol and trimethyl-aluminum

Low-Temperature Plasma-Enhanced Atomic Layer Deposition of SiO2 Using Carbon Dioxide

$$\hbox {SiO}_{2}\hbox {/TiO}_{2}$$ SiO 2 /TiO 2 multi-layered thin films with self-cleanin

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