Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors

Päiväsaari, Jani; Putkonen, Matti; Sajavaara, Timo; Niinistö, Lauri

doi:10.1016/j.jallcom.2003.11.149

Cited by 71 publications

(58 citation statements)

References 38 publications

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“…were kept constant at 1.5 and 4 second respectively for the Ln(thd) 3 and O 3 pulse, using purge times of 1.5 s after each precursor pulse. The pulse durations proved to be sufficiently long for proper surface saturation and for purging, in agreement with reports [9][10][11] . 1.5 x 1.5 cm 2 p-type Si(100) and 2 x 3 cm 2 soda 75 lime glass (SLG) substrates were used.…”

Section: Methodssupporting

confidence: 88%

“…6 and Fig. 7, one observes good correspondence between the changes in positions of the 10 absorption peaks and changes in the crystallinity of the films. This is reasonable since the absorptions originate from forbidden f-f transitions and depend on the local environment around the lanthanide cations.…”

Section: Discussionsupporting

confidence: 59%

“…Among the lanthanide oxides and precursors studied in this work, Nd 9 and Er 10 have previously 30 been investigated in the temperature range 200 -450 °C, Yb 11 at 250 -400 °C, while for Sm, Eu, Dy, Ho, Tm 8 , and Tb 12 only data at 300 °C are available. The use of alternative precursors has been investigated [13][14][15][16][17][18][19][20] .…”

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confidence: 99%

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Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

et al. 2013

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Ln 2 O 3 thin films with optically active f-electrons (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb) have been grown on Si(100) and soda lime glass substrates by atomic layer deposition (ALD) using Ln(thd) 3 (Hthd = 2,2,6,6-tetramethyl-3,5-heptanedione) and ozone as precursors. The temperature range for depositions was 200 -400 °C. Growth rates were measured by spectroscopic ellipsometry and a region with constant growth rate (ALD window) was found for Ln = Ho and Tm. All the compounds are grown as amorphous films at low temperatures, whereas crystalline films (cubic C-Ln 2 O 3 ) are obtained above a certain temperature ranging from 300 to 250 °C for 10 Nd 2 O 3 to Yb 2 O 3 , respectively. AFM studies show that the films were smooth (rms < 1 nm) except for depositions at the highest temperatures. Refractive index was measured by spectroscopic ellipsometry and was found to depend on the deposition temperature. Optical absorption measurements show that the absorption from the f-f transitions depends strongly on the crystallinity of the material. The clear correlation between the degree of crystallinity, optical absorptions and refractive index, is discussed.

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Section: Methodssupporting

confidence: 88%

Section: Discussionsupporting

confidence: 59%

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Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

et al. 2013

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“…Päiväsaari et al reported an ALD process for Er 2 O 3 , using Er(thd) 3 and Er(CpMe) 3 as precursors, in combination with O 3 and H 2 O as oxidants, respectively. 24,25 Al 2 O 3 :Er waveguides have also been synthesized by ALD, 26 but no details on the ALD process were given. In addition, ALD has been used for Er incorporation in Y 2 O 3 by alternating the growth of Y 2 O 3 and Er 2 O 3 layers.…”

Section: Introductionmentioning

confidence: 99%

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

Dingemans

Clark²,

Delft

et al. 2011

Journal of Applied Physics

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Atomic layer deposition was used to deposit amorphous Er-doped Al2O3 films (0.9–6.2 at. % Er) on Si(100). The Er3+ photoluminescence (PL), Er3+ upconversion luminescence, as well as the Si PL and associated surface passivation properties of the films were studied and related to the structural change of the material during annealing. The PL signals from Er3+ and Si were strongly dependent on the annealing temperature (T = 450–1000 °C), but not directly influenced by the transition from an amorphous to a crystalline phase at T > 900 °C. For T > 650 °C, broad Er3+ PL centered at 1.54 μm (4I13/2) with a full width at half maximum of 55 nm was observed under excitation of 532 nm light. The PL signal reached a maximum for Er concentrations in the range of 2–3 at. %. Multiple photon upconversion luminescence was detected at 660 nm (4F9/2), 810 nm (4I9/2), and 980 nm (4I11/2), under excitation of 1480 nm light. The optical activation of Er3+ was related to the removal of quenching impurities, such as OH (3 at. % H present initially) as also indicated by thermal effusion experiments. In contrast to the Er3+ PL signal, the Si luminescence, and consequently the Si surface passivation, decreased for increasing annealing temperatures. This trade-off between surface passivation quality and Er3+ PL can be attributed to an opposite correlation with the decreasing hydrogen content in the films during thermal treatment.

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“…[25,26] In addition, we have previously reported the ALD of erbium oxide using Er(thd) 3 (thd = 2,2,6,6-tetra-methyl-3,5-heptane-dione) and ozone as precursors. [27,28] b-Diketonate-type thd-complexes are volatile, and have frequently been utilized as precursors in ALD, [29] for example in the case of Sc 2 O 3 , [30] Y 2 O 3 , [31,32] La 2 O 3 , [33] CeO 2 , [34,35] as well as other Ln 2 O 3 films (Ln = Nd, Sm, Eu, Gd, Dy, Ho, Tm). [4,28,36] b-Diketonates do not readily react with water, but require the use of a stronger oxidizer, such as ozone, to produce oxide thin films with low carbon and hydrogen content.…”

Section: Introductionmentioning

confidence: 99%

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

Päiväsaari¹,

Niinistö²,

Arstila

et al. 2005

Chem. Vap. Deposition

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Organometallic tris(methylcyclopentadienyl)erbium and water were successfully exploited as precursors for the atomic layer deposition (ALD) of Er 2 O 3 thin films. Deposition studies were carried out in the temperature range 175±450 C, where Si(100) and soda-lime glass were used as substrates. ALD-type growth mechanism could be verified at relatively low deposition temperatures of 250 C and 300 C, where a high growth rate (1.5 per cycle) for an ALD process was obtained. The deposited Er 2 O 3 films were smooth and very uniform, and contained only low concentrations of carbon and hydrogen as impurities. The films were crystalline with the (111) orientation of the cubic phase dominating. The effective permittivity of the Er 2 O 3 /native SiO 2 insulator stack was approximately 10.

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Atomic layer deposition of rare earth oxides: erbium oxide thin films from β-diketonate and ozone precursors

Cited by 71 publications

References 38 publications

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

Structural and optical properties of lanthanide oxides grown by atomic layer deposition (Ln = Pr, Nd, Sm, Eu, Tb, Dy, Ho, Er, Tm, Yb)

Er3+ and Si luminescence of atomic layer deposited Er-doped Al2O3 thin films on Si(100)

High Growth Rate of Erbium Oxide Thin Films in Atomic Layer Deposition from (CpMe)3Er and Water Precursors

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