Atomic layer deposition of PbZrO3 thin films

Harjuoja, Jenni; Väyrynen, S.; Putkonen, Matti; Niinistö, Lauri; Raühala, E.

doi:10.1016/j.apsusc.2006.11.041

Cited by 17 publications

(12 citation statements)

References 35 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Harjuoja et al reported the first growth of PbTiO 3 in 2005, without studying the electric properties . Harjuoja used PbPh 4 as the lead source for deposition of PbTiO 3 , and later also PbZrO 3 , together with Zr(thd) 4 . These papers sparked considerable interest in ALD of PZT, and already later that year Watanabe et al used a liquid injection ALD system to deposit the combined material and confirmed its piezo‐ and ferroelectric properties .…”

Section: The Current Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

properties in thin film complex oxides and their heterostructures is still in its infancy.Functional perovskite oxide thin films have traditionally been deposited by physical, high temperature techniques, such as molecular beam epitaxy (MBE) and pulsed laser deposition (PLD). While these methods can provide films of very high structural quality, they do not offer deposition of conformal film on complex structures while maintaining control of stoichiometry. Chemical deposition techniques were long thought unsuitable for deposition of complex systems with high structural quality. This has changed dramatically over the last two decades. One of the most important techniques to emerge in this area has been atomic layer deposition (ALD).In this short review we aim to summarize the perovskite and ABO 3 -oxides, down to the ilmenite structure, that have been deposited using the ALD technique. The review includes work done over the last 20 years, and covers all oxide perovskites with ferromagnetic, piezoelectric and ferroelectric functionality known to have been deposited by ALD ( Table 1). The origin of the properties in these specific structures is briefly discussed, followed by a complete listing of the known systems. Perovskite heterostructures with new properties and combinations of properties are brought up, before thoughts on possible future work in the field concludes the paper. Why Atomic Layer Deposition?The ALD technique was pioneered independently in both Russia and Finland during the 1960s and 70s, and its history was thoroughly described by Puurunen in 2014. [4] The technique has been comprehensively discussed in several review papers over the last years. The first commercial application was to deposit zinc sulfide, used for electroluminescent display panels. The number of materials with known deposition routes was very limited for the first 20 years, before it exploded in the 1990s and still continues to grow. At the time of the review written by Miikkulainen et al. in 2013, binary oxides of most of the natural elements had been reported, as well as many nitrides, sulfides and fluorides (Figure 2). [5] As the community has embraced the possibility of growing epitaxial films of high chemical and structural quality, systems that are even more complex have been deposited, including materials with ternary, quaternary and even quinary compositions.The advantages and drawbacks of ALD as a thin film deposition technique have been reviewed several times the The last 20 years have seen a massive increase in reports on complex oxides with functional properties synthesized by atomic layer deposition (ALD). Many of these compounds have perovskite or perovskite-related structures, and exhibit a range of electric and magnetic properties. This short review summarizes the current status of functional perovskites and ABO 3 compounds down to the ilmenite structure prepared by ALD, focusing on ferromagnetism and ferro-and piezoelectricity. All perovskite-related compounds known to have been deposited by ALD down to the ilmeni...

show abstract

Section: The Current Toolboxmentioning

confidence: 99%

Functional Perovskites by Atomic Layer Deposition – An Overview

Sønsteby

Fjellvåg

Nilsen

2017

Adv Materials Inter

View full text Add to dashboard Cite

show abstract

“…Several groups have reported the successful ALD of SrTiO 3 and/or BST, 153–155 and some initial reports of ALD PZT have been published, 156–158 but there remain many difficulties controlling the stoichiometry and leakage in ALD‐fabricated complex oxides. Other researchers have investigated alternative approaches to forming the kinds of high surface area structures that make DRIE+ALD attractive fabrication techniques.…”

Section: Integration Of High‐capacitance Density Dielectric Filmmentioning

confidence: 99%

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Brennecka

Ihlefeld

Maria

et al. 2010

Journal of the American Ceramic Society

112

102

View full text Add to dashboard Cite

Capacitor technologies are as varied as the applications that they enable, but one of the common themes in advanced capacitors for consumer electronics is a desire for increased capacitance in smaller areas/volumes. The heroic advances of discrete capacitor manufacturers have kept pace with the increasing demands of miniaturization, but a time is quickly approaching when it appears that powder‐based fabrication techniques simply will not be able to achieve desired layer thicknesses and capacitance densities. Here, we review the current state of the art and recent advances in the processing science and technology of high‐permittivity thin films with a focus on industrially scalable solution‐based fabrication processes of perovskite ferroelectric systems that appear to offer the greatest promise for the fabrication of future nanoscale capacitors.

show abstract

“…Ferroelectric lead based oxides have previously been deposited by ALD by Harjuoja et al 31,32 while the deposition of bismuth titanates by ALD is reported by Vehkamäki et al 33 In addition, the growth of ferroelectric yttrium doped hafnium oxide by ALD has recently been reported. 34 The current paper describes the epitaxial growth of ferroelectric LiNbO 3 by atomic layer deposition (ALD).…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition of ferroelectric LiNbO₃

et al. 2013

View full text Add to dashboard Cite

The ferroelectric and electro-optical properties of LiNbO 3 make it an important material for current and future applications. It has also been suggested as a possible lead-free replacement for present PZTdevices. The atomic layer deposition (ALD) technique offers controlled deposition of films at an industrial scale and thus becomes an interesting tool for growth of LiNbO 3. We here report on ALD deposition of LiNbO 3 using lithium silylamide and niobium ethoxide as precursors, thereby providing good control of cation stoichiometry and films with low impurity levels of silicon. The deposited films are shown to be ferroelectric and their crystalline orientations can be guided by the choice of substrate. The films are polycrystalline on Si (100) as well as epitaxially oriented on substrates of Al 2 O 3 (012), Al 2 O 3 (001), and LaAlO 3 (012). The coercive field of samples deposited on Si (100) was found to be $220 kV cm À1 , with a remanent polarization of $0.4 mC cm À2. Deposition of lithium containing materials is traditionally challenging by ALD, and critical issues with such deposition are discussed.

show abstract

Atomic layer deposition of PbZrO3 thin films

Cited by 17 publications

References 35 publications

Functional Perovskites by Atomic Layer Deposition – An Overview

Functional Perovskites by Atomic Layer Deposition – An Overview

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Atomic layer deposition of ferroelectric LiNbO₃

Contact Info

Product

Resources

About

Atomic layer deposition of PbZrO3 thin films

Cited by 17 publications

References 35 publications

Functional Perovskites by Atomic Layer Deposition – An Overview

Functional Perovskites by Atomic Layer Deposition – An Overview

Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Atomic layer deposition of ferroelectric LiNbO3

Contact Info

Product

Resources

About

Atomic layer deposition of ferroelectric LiNbO₃