Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Brennecka, Geoff L.; Ihlefeld, Jon F.; Maria, Jon‐Paul; Tuttle, Bruce A.

doi:10.1111/j.1551-2916.2010.04211.x

Cited by 112 publications

(108 citation statements)

References 147 publications

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“…Therefore, the phenomenology presented and comprehensively discussed here is relevant not only for the design and development of novel perovskite solid solutions, such as those lead-free high-sensitivity piezoelectrics and multiferroic magnetoelectrics under extensive investigation [10,11,42], but also for the downscaling of ferroelectric ceramic technologies like multilayer ceramic actuators [43].…”

Section: Fig 4 Normalizedmentioning

confidence: 99%

Origin of discrepancy between electrical and mechanical anomalies in lead-free (K,Na)NbO3 -based ceramics

et al. 2016

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Ferroelectric polymorphic phase coexistence, associated with either the presence of a morphotropic phase boundary or a temperature-driven polymorphic phase transition, is currently acknowledged as the key to high piezoelectric activity and is searched when new perovskite materials are developed, like lead-free alternatives to state-of-the-art Pb(Zr,Ti)O 3 . This requires characterization tools that allow phase coexistence and transitions to be readily identified, among which measurements of the temperature dependences of Young's modulus and mechanical losses by dynamical mechanical analysis stand out as a powerful technique to complement standard electrical characterizations. We report here the application of this technique to (K 1−x Na x )NbO 3 -based materials, which are under extensive investigation as environmentally friendly high sensitivity piezoelectrics. The elastic anomalies associated with the different phase transitions are identified and are shown to be distinctively shifted in relation to the dielectric ones. The origin of this discrepancy is discussed with the help of temperature-dependent Raman spectroscopy and is proposed to be a characteristic of diffuse phase transitions.

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Section: Fig 4 Normalizedmentioning

confidence: 99%

Origin of discrepancy between electrical and mechanical anomalies in lead-free (K,Na)NbO3 -based ceramics

et al. 2016

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“…[5][6][7][8] In these routes, a solution is spin cast on a substrate and then subsequently heated to induce crystallization of the ferroelectric fi lm. For Pb-based ferroelectric fi lms Understanding interfaces between dissimilar materials is crucial to the development of modern technologies, for example, semiconductor-dielectric and thermoelectric-semiconductor interfaces in emerging electronic devices.…”

Section: Introductionmentioning

confidence: 99%

Combined Experimental and Computational Methods Reveal the Evolution of Buried Interfaces during Synthesis of Ferroelectric Thin Films

Jones

LeBeau

Nikkel

et al. 2015

Adv Materials Inter

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(1 of 10) 1500181 wileyonlinelibrary.com IntroductionFerroelectric thin fi lms have broad application in society ranging from nonvolatile memories to microrobotics and integrated capacitors. As the sizes of devices and the thicknesses of fi lms decrease, the specifi c surface and interfacial areas increase signifi cantly. At these progressively smaller length scales, interfacial phenomena such as interdiffusion and interface reactions are promoted and can have benefi cial or deleterious consequences on the resultant fi lm and device properties and functionality. [1][2][3][4] Thus, an understanding of interfacial phenomena between dissimilar materials is of paramount importance in materials and devices of small length scale.Solution-based chemical routes have become effective for the synthesis of ferroelectric lead zirconate titanate (PZT) thin fi lms on diverse substrates. [5][6][7][8] In these routes, a solution is spin cast on a substrate and then subsequently heated to induce crystallization of the ferroelectric fi lm. For Pb-based ferroelectric fi lms Understanding interfaces between dissimilar materials is crucial to the development of modern technologies, for example, semiconductor-dielectric and thermoelectric-semiconductor interfaces in emerging electronic devices. However, the structural characterization of buried interfaces is challenging because many measurement techniques are surface sensitive by design. When interested in interface evolution during synthesis, the experimental challenges multiply and often necessitate in situ techniques. For solution-derived lead zirconate titanate (PZT) ferroelectric thin fi lms, the evolution of buried interfaces during synthesis (including dielectricmetal and metal-metal) is thought to dramatically infl uence the resultant dielectric and ferroelectric properties. In the present work, multiple experimental and computational methods are combined to characterize interface evolution during synthesis of ferroelectric PZT fi lms on platinized Si wafers-including in situ X-ray diffraction during thermal treatment, aberration-corrected scanning transmission electron microscopy of samples quenched from various synthesis states, and calculations using density functional theory. Substantial interactions at buried interfaces in the PZT/Pt/Ti/SiO x /Si heterostructure are observed and discussed relative to their role(s) in the synthesis process. The results prove that perovskite PZT nucleates directly from the platinum (111)-oriented bottom electrode and reveal the roles of Pb and O diffusion and intermetallic Pt 3 Pb and Pt 3 Ti phases.

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“…However, ceramic capacitors exhibit low breakdown strength due to microstructural defects, which results in a low energy density. 7,8) The energy that can be stored in a capacitor depends on the relative dielectric constant and the square of the breakdown strength of the dielectric layer according to equation (1) …”

Section: Introductionmentioning

confidence: 99%

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

Park¹

2014

Korean. J. Mater. Res.

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Flexible BaTiO 3 films as dielectric materials for high energy density capacitors were deposited on polyethylene terephthalate (PET) substrates by r.f. magnetron sputtering. The growth behavior, microstructure and electrical properties of the flexible BaTiO 3 films were dependent on the sputtering pressure during sputtering. The RMS roughness and crystallite size of the BaTiO 3 increased with increasing sputtering pressure. All BaTiO 3 films had an amorphous structure, regardless of the sputtering pressures, due to the low PET substrate temperature. The composition of films showed an atomic ratio (Ba:Ti:O) of 0.9:1.1:3. The electrical properties of the BaTiO 3 films were affected by the microstructure and roughness. The BaTiO 3 films prepared at 100 mTorr exhibited a dielectric constant of ~80 at 1 kHz and a leakage current of 10 −8 A at 400 kV/cm. Also, films showed polarization of 8 µC/cm 2 at 100 kV/cm and remnant polarization (P r ) of 2 µC/cm 2 . This suggests that sputter deposited flexible BaTiO 3 films are a promising dielectric that can be used in high energy density capacitors owing to their high dielectric constant, low leakage current and stable preparation by sputtering.

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Processing Technologies for High‐Permittivity Thin Films in Capacitor Applications

Cited by 112 publications

References 147 publications

Origin of discrepancy between electrical and mechanical anomalies in lead-free (K,Na)NbO3 -based ceramics

Origin of discrepancy between electrical and mechanical anomalies in lead-free (K,Na)NbO3 -based ceramics

Combined Experimental and Computational Methods Reveal the Evolution of Buried Interfaces during Synthesis of Ferroelectric Thin Films

Effects of Sputtering Pressure on the Properties of BaTiO3 Films for High Energy Density Capacitors

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