Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

Ding, Shi‐Jin; Chen, Hongbing; Cui, Xugao; Sun, Cheng; Sun, Qingqing; Zhou, Peng; Lu, Hong‐Liang; Zhang, David Wei; Chen, Shen

doi:10.1186/1556-276x-8-80

Cited by 45 publications

(18 citation statements)

References 22 publications

(31 reference statements)

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“…Overexpression of two Arabidopsis AP2/EREBP genes, CBF1 and DREB1A, resulted in stronger tolerance to drought, salt, and freezing [24] – [26] . Transgenic Arabidopsis plants overexpressing CBF3 under the control of cauliflower mosaic virus (CaMV) 35S promoter also showed a high tolerance to drought, high-salinity, and freezing stress [25] , [27] , [28] . Five CBF and AP2/EREBP genes were highly expressed in SM as compared to SMT.…”

Section: Discussionmentioning

confidence: 99%

De Novo Transcriptome and Small RNA Analysis of Two Chinese Willow Cultivars Reveals Stress Response Genes in Salix matsudana

et al. 2014

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Salix matsudana Koidz. is a deciduous, rapidly growing, and drought resistant tree and is one of the most widely distributed and commonly cultivated willow species in China. Currently little transcriptomic and small RNAomic data are available to reveal the genes involve in the stress resistant in S. matsudana. Here, we report the RNA-seq analysis results of both transcriptome and small RNAome data using Illumina deep sequencing of shoot tips from two willow variants(Salix. matsudana and Salix matsudana Koidz. cultivar ‘Tortuosa’). De novo gene assembly was used to generate the consensus transcriptome and small RNAome, which contained 106,403 unique transcripts with an average length of 944 bp and a total length of 100.45 MB, and 166 known miRNAs representing 35 miRNA families. Comparison of transcriptomes and small RNAomes combined with quantitative real-time PCR from the two Salix libraries revealed a total of 292 different expressed genes(DEGs) and 36 different expressed miRNAs (DEMs). Among the DEGs and DEMs, 196 genes and 24 miRNAs were up regulated, 96 genes and 12 miRNA were down regulated in S. matsudana. Functional analysis of DEGs and miRNA targets showed that many genes were involved in stress resistance in S. matsudana. Our global gene expression profiling presents a comprehensive view of the transcriptome and small RNAome which provide valuable information and sequence resources for uncovering the stress response genes in S. matsudana. Moreover the transcriptome and small RNAome data provide a basis for future study of genetic resistance in Salix.

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Section: Discussionmentioning

confidence: 99%

De Novo Transcriptome and Small RNA Analysis of Two Chinese Willow Cultivars Reveals Stress Response Genes in Salix matsudana

et al. 2014

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“…A number of processes have been studied for NVM device applications but these processes do not ensure size control of QDs below 2 nm with good uniformity. A few of such processes like sputtering [8] and atomic layer deposition (ALD) [9] for Pt nanocrystals, ion beam synthesis is utilised for GaN and silicon QDs synthesis [10], e‐beam evaporation and annealing for Co [11] and many more. Even, most of these processes require complex and costly infrastructure for nanocrystals/QDs synthesis; whereas, by colloidal synthesis, the size of below 2 nm of Co QDs could be achieved with uniform size distribution.…”

Section: Introductionmentioning

confidence: 99%

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Yadav

Velampati

Mandal

2019

Micro & Nano Letters

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The present work details the synthesis of cobalt quantum-dots (Co QDs) with size downscaling to 1-2 nm and their applications in non-volatile memory (NVM) devices. The process of colloidal synthesis is simple and provides the control over a wide range of QDs size. The scaled-down colloidal Co QDs are applied for the NVM device fabrication. Colloidal synthesised Co QDs are spin-coated over silicon dioxide wafer for the fabrication of floating-gate NVM devices. Capacitance-voltage (C-V) and capacitance-time (C-t) measurements of the fabricated NVM device indicate a low voltage operation of device. A sweep voltages as small as 1.2-4 V lead to a flat band voltage shift of 0.35-1.5 V, evidencing the low operating voltage and low power NVM applications. Further, retention characteristics show a robust retention by fabricated NVM device. In addition, C-V measurements are done for the several samples in order to study the process repeatability. The work also is compared with the other processes for the floating gate memory device.

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“…In recent years, the technique of atomic layer deposition (ALD), which is based on sequential self-limited and complementary surface chemisorption reactions, has been considered as a perfect thin film deposition method because of its outstanding advantages such as relatively low process temperature, stoichiometric composition, large-area uniformity, precise thickness control, and high conformability [ 13 , 14 ]. Furthermore, ALD is also a very promising method for preparing high-density metal NPs (e.g., Pt, Ir, and Ru) at relatively low temperature of <350 °C [ 15 – 17 ]. As an example, Liu et al obtained Ir NPs with a high density of 0.6 × 10 12 cm −2 and an average size of 4.9 nm by ALD at 300 °C for nonvolatile memory applications [ 17 ].…”

Section: Introductionmentioning

confidence: 99%

“…As an example, Liu et al obtained Ir NPs with a high density of 0.6 × 10 12 cm −2 and an average size of 4.9 nm by ALD at 300 °C for nonvolatile memory applications [ 17 ]. Ding et al also reported that two-dimensional high-density Pt NPs (2 × 10 12 cm −2 ) were self-assembled on the Al 2 O 3 film at 300 °C by ALD, which demonstrated noticeable electron trapping capacity in Si-based nonvolatile memory [ 15 ].…”

Section: Introductionmentioning

confidence: 99%

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

et al. 2017

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For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of ~1.5 × 1012 cm−2 and a small size of 3~4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

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Atomic layer deposition of high-density Pt nanodots on Al2O3 film using (MeCp)Pt(Me)3 and O2 precursors for nonvolatile memory applications

Cited by 45 publications

References 22 publications

De Novo Transcriptome and Small RNA Analysis of Two Chinese Willow Cultivars Reveals Stress Response Genes in Salix matsudana

De Novo Transcriptome and Small RNA Analysis of Two Chinese Willow Cultivars Reveals Stress Response Genes in Salix matsudana

Scaling down of cobalt quantum‐dots by colloidal route for non‐volatile memory device application

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

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