Atomic layer deposition of epitaxial ZnO on GaN and YSZ

Lin, Chia‐Wen; Ke, Dong Jie; Chao, Yen Cheng; Chang, Li; Liang, Mei Hui; Ho, Yen Teng

doi:10.1016/j.jcrysgro.2006.10.139

Cited by 23 publications

(14 citation statements)

References 14 publications

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“…This shows well‐aligned in‐plane epitaxy with six‐fold symmetry for ZnO film and three‐fold symmetry for YSZ. The orientation relationship between ZnO and YSZ is determined to be (0002)ZnO//(111)YSZ and [11‐20]ZnO//[1‐10]YSZ, which is consistent with previous reports 12–14. The in‐plane mismatch can be deduced to be about 10% as expected from the crystal lattices of ZnO and YSZ as shown in Fig.…”

Section: Resultssupporting

confidence: 89%

“…However, as both of ZnO and high‐k gate dielectrics have wide band gaps, the band alignment at the interface, a critical parameter to determine the performance of TFT, need to be well understood and should be exactly controlled 8, 9. Yttria‐stabilized ZrO 2 (YSZ), which has excellent dielectric properties for replacing traditional SiO 2 , not only can be used as high‐k gate dielectric layer for ZnO‐based transparent TFTs but also a desirable substrate for single crystal ZnO thin film growth because of its excellent thermal stability and lattice match for ZnO(001)//YSZ(111) planes 10–14. In this paper, we report our studies of atomic structures and band alignment at ZnO and high‐k gate dielectric ZrO 2 interface by applying characterization techniques and first‐principles calculations.…”

Section: Introductionmentioning

confidence: 99%

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Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors

Wang

Wong

Chen

et al. 2010

Physica Status Solidi (a)

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In this paper, we report the studies of atomic and electronic structures at ZnO and ZrO 2 interface. The epitaxial heterostructures were grown by laser molecular beam epitaxy and the interface atomic structure was determined by using highresolution transmission electron microscopy (TEM). Band alignment for high-k ZrO 2 layer on ZnO was investigated by in situ X-ray photoemission spectroscopy (XPS) characterization and first-principles calculations based on density functional theory (DFT). The valence and conduction band offsets (CBOs) were found to be 0.27 AE 0.05 eV and 2.16 AE 0.05 eV, respectively. The results are in good agreement with values from theoretical calculations. The large CBO and small lattice mismatch between ZnO and ZrO 2 suggest potential for ZrO 2 to be used as a gate dielectric in ZnO-based transparent electronic devices.

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Section: Resultssupporting

confidence: 89%

Section: Introductionmentioning

confidence: 99%

Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors

Wang

Wong

Chen

et al. 2010

Physica Status Solidi (a)

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“…On the contrary, on the GaN (0001-Ga) seeding surface, the ALD growth proceeds as a smooth pseudomorphic epitaxial process at the macroscopic scale, with coherent single-crystal stacking of ZnO onto the GaN seed and a sharp hetero-interface. This epitaxial stacking confirms and extends the results previously reported in the literature [11][12][13][14][15] on the ALD epitaxial growth of ZnO on GaN. However, it can be noted that the epitaxial relationship is obtained with a deposition at 180 • C which is lower than the temperature used in previous works [11,12].…”

Section: Discussionsupporting

confidence: 91%

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

et al. 2017

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It has previously been reported that epitaxial growth of ZnO can be obtained at low temperatures by atomic layer deposition (ALD) onto a GaN (0001-Ga) surface, corresponding to a~2.3% compressive lattice mismatch of the deposited ZnO. The question addressed here is the atomic ordering of deposited ZnO as a function of the lattice mismatch between ZnO and several single-crystal seeding surfaces. We have deposited ZnO using ALD onto either the (111) cubic or (0001) hexagonal surfaces of a set of available single-crystal substrates (GaAs, InP, GaN, SiC), for which the lattice mismatch varies over a wide range of values, positive and negative. It is found that deposition onto surfaces with very high extensive lattice mismatch (GaAs, InP) leads to polycrystalline ZnO, similar to the configuration obtained on an amorphous SiO 2 surface. In contrast, ZnO ALD deposition onto both 2H-GaN (0001-Ga) and 4H-SiC (0001-Si) surfaces with lower and compressive mismatch leads to epitaxial ordering over the whole substrate temperature range of 180-250 • C.

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“…The PL spectrum of ZnO nanowires with the diameter of 20 nm has the PL peak position at 3.22 eV which is similar to the PL peak position of ZnO thin films. 13 For ZnO nanodots, we observed blueshift in PL peak positions at 3.31 and 3.24 eV for diameters of 5 and 10 nm, respectively. As the size of nanodots decreases, the PL peak position shifts to high photon energy, which is originated from quantum confinement effects of ZnO nanodots.…”

mentioning

confidence: 75%

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

Son

Lim

Cho

et al. 2008

Applied Physics Letters

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We developed step edge decoration method for the fabrication of semiconductor ZnO nanodots and nanowires using pulsed laser deposition. We synthesized high quality ZnO nanowires with the small diameter of about 20nm and the uniform interval of about 80nm between each nanowire, which has a simple structure for the formation of contact electrodes. The ZnO nanowire-based sensor was prepared only with the simple process of a gold electrode formation. The ZnO nanowire-based sensor exhibited the high surface-to-volume ratio of 58.6μm−1 and the significantly high sensitivity of about 10 even for the low ethanol concentration of 0.2ppm.

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Atomic layer deposition of epitaxial ZnO on GaN and YSZ

Cited by 23 publications

References 14 publications

Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors

Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

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Atomic layer deposition of epitaxial ZnO on GaN and YSZ

Cited by 23 publications

References 14 publications

Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin‐film transistors

Atomic and electronic structures at ZnO and ZrO2 interface for transparent thin‐film transistors

Influence of the Lattice Mismatch on the Atomic Ordering of ZnO Grown by Atomic Layer Deposition onto Single Crystal Surfaces with Variable Mismatch (InP, GaAs, GaN, SiC)

Synthesis of horizontally aligned ZnO nanowires localized at terrace edges and application for high sensitivity gas sensor

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Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors

Atomic and electronic structures at ZnO and ZrO₂ interface for transparent thin‐film transistors