Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

Brazeau, Allison L.; Barry, Seán T.

doi:10.1021/cm802195b

Cited by 36 publications

(24 citation statements)

References 19 publications

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“…29,[154][155][156][157][158][159][160] These compounds garnered substantial attention because they improved the performance shown by diketonates, especially for Cu and Ni deposition. The need for more reactive compounds during ALD (e.g., ozone) agrees with the limited ability of Cu[acac] 2 to efficiently eliminate ligands.…”

Section: B Surface Reactions Of Hf[n(ch 3 ) 2 ] 4 As An Example Of Mmentioning

confidence: 99%

Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface

Lin¹,

Teplyakov²,

Rodríguez‐Reyes³

2013

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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Section: B Surface Reactions Of Hf[n(ch 3 ) 2 ] 4 As An Example Of Mmentioning

confidence: 99%

Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface

Lin¹,

Teplyakov²,

Rodríguez‐Reyes³

2013

Journal of Vacuum Science & Technology A: Vacuum, Surfaces,

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“…Flat devices with ALD Al 2 O 3 insulatorAs it was not yet possible to measure the Al 2 O 3 layer thicknesses directly, the samples are referred to in terms of ALD cycles of Al 2 O 3 growth. The range of 2 to 5 cycles, examined here, should yield about 0.5 nm to 1.5 nm thick layers of alumina respectively 83. The devices show diode I-V characteristics as seen inFigure 4.5(a).…”

mentioning

confidence: 91%

“…Atomic layer deposition (ALD) is particularly attractive since it is capable of growing ultra-thin films with excellent uniformity, conformality, and thickness control. 83 Accordingly, we have made flat and nanostructured devices incorporating an ALD deposited Al 2 O 3 layer.…”

Section: Introductionmentioning

confidence: 99%

“….2). The deposition sequence used was developed previously by our lab,83 where one cycle consists of a 5 s pulse of aluminum precursor, a 5 s pulse of N 2 , a 10 s evacuation, a 5 s pulse of water, a 5 s pulse of N 2 and finally a 10 s evacuation. This cycle was repeated as required to achieve a given thickness, with a deposition rate of 2.7 Å/cycle at 175 °C.…”

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confidence: 99%

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Thin Film Precursors, Properties and Applications: Chemical Vapour Deposition and Atomic Layer Deposition of Group 4, 11 and 13 Elements and Their Oxides

Gordon¹

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Brass and bronze substrates were coated by atomic layer deposition (ALD) with alumina and titania in small and large scale batches. These films were evaluated for use as protective and cosmetic coatings. Optimization of deposition parameters for uniform coatings both on individual coins and across a batch for Al 2 O 3 and TiO 2 films was performed. The effect of film thickness on colour was examined. High-quality, uniform coatings were achieved with multi-pulse programs.The interference colours resulting from thin films of Al 2 O 3 deposited by ALD on silicon were analyzed using a robotic gonioreflectometer. A series of thin films were deposited and their reflectivity values obtained for the visible spectrum. A comparison of these values with the predictions of computer simulations has revealed deviations from predicted reflectivities. The effect of these discrepancies on perceived colour appearance was investigated. Simulation predicts larger iridescence than what was observed. Alumina films were deposited by ALD on flat and nanostructured silicon substrates, and incorporated into PEDOT-Al 2 O 3 -silicon architectures that were then evaluated as photovoltaic devices. The reverse saturation currents observed on flat devices made with Al 2 O 3 films were similar devices made with an SiO 2 layer. The structured samples with Al 2 O 3 showed a considerable increase in efficiency (of up to five times) over the equivalent flat samples. A new indium(III) guanidinate, (In[(N i Pr) 2 CNMe 2 ] 3 , was synthesized. Thermogravimetric analysis showed elemental indium was produced from the compound as a residual mass. Thermolysis in a sealed NMR tube showed carbodiimide and ii protonated dimethyl amine by 1 H NMR. Chemical vapour deposition (CVD) experiments above 275 °C with air as the reactant gas produced cubic indium oxide films with good transparency. Dimeric silver(I) and gold(I) tert-butyl-imino-2,2-dimethylpyrrolidinates were synthesized and evaluated for thermal stability by thermal gravimetric analysis, differential scanning calorimetry and variable-temperature solution NMR. The compounds were used to deposit metallic films on silicon and glass substrates by CVD, with and without a flow of heated nitrogen gas. The compounds decomposed to produce metallic films at 140 °C for the silver compound and 300 °C for the gold compound. Additional CVD experiments with heated nitrogen gas flow improved film uniformity without sacrificing film purity. iii Preface Gordon, P. G.; Baribeau, R.; Barry, S. T.; Goniocolorimetric Study of Aluminum Oxide Films Deposited by Atomic Layer Deposition, Thin Solid Films, 2012, 520, 2943. The article is wholly reproduced and edited for formatting and clarity of presentation. The student performed all work related to deposition and characterization of films (with the exception of goniocoloureflectometry) and simulations. Writing was collaborative between all co-authors. Chapter 4 Demtchenko, S.; McGarry, S.; Gordon, P. G.; Barry, S. T.; Tarr, N. G.; Characterization and assessment of a novel hy...

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“…51 Deposition on bronze circulation coins was initially achieved using a custom-built ALD tool and a previously reported aluminum precursor. 52 Thicknesses of alumina producing interference colours were investigated by ellipsometry and film adhesion degradation was related to cleanliness of the coins. Laminate films of alumina and titania were produced and a 'triple pulse' program (discussed below) was created to increase film uniformity at 250°C.…”

Section: Introductionmentioning

confidence: 99%

Vapour Deposition: Thermal Characterization and Application of Metal Oxide Thin Films

Wells¹

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Three precursors of group 11 metals, gold(I) 1,3-diisopropyl-imidazolidin-2ylidene hexamethyldisilazide, gold(I) tert-butyl-imino-2,2-dimethylpyrrolidinate, silver(I) tertbutyl-imino-2,2-dimethylpyrrolidinate were subjected to solution based NMR thermolysis studies. Rates of decomposition and order of reactivity were gathered by monitoring the disappearance of starting material. Two novel antimony compounds, trimethyl phosphine antimony (III) chloride and bistrimethyl phosphine antimony (III) chloride were subjected to thermal characterization by TGA and CVD experiments in attempt to produce antimony or antimony oxide films. Few experiments gave varying depositions but reproducible coatings were not achieved. Protective coatings of alumina and bilayers of alumina and titania were deposited on bronze and brass test tokens as well as on numismatic silver coins. Multiple tests examined the efficacy of such films against physical and chemical wear. Silver coins were compared to a traditional lacquer coating. The ALD coatings on test tokens provided improved wear and chemical protection vs. unprotected coins. Final numismatic coatings of alumina gave greatest adhesion, but did reveal small areas of chemical penetration.

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Atomic Layer Deposition of Aluminum Oxide Thin Films from a Heteroleptic, Amidinate-Containing Precursor

Cited by 36 publications

References 19 publications

Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface

Competing reactions during metalorganic deposition: Ligand-exchange versus direct reaction with the substrate surface

Thin Film Precursors, Properties and Applications: Chemical Vapour Deposition and Atomic Layer Deposition of Group 4, 11 and 13 Elements and Their Oxides

Vapour Deposition: Thermal Characterization and Application of Metal Oxide Thin Films

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