Atomic Layer Deposition of Al‐doped ZnO Films Using Aluminum Isopropoxide as the Al Precursor

Xu, Qingyu; Cao, Yan‐Qiang; Guo, Bing-Lei; Zhai, Haifa; Li, Aidong

doi:10.1002/cvde.201207051

Cited by 15 publications

(10 citation statements)

References 43 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…This behavior can be attributed to the ALD AZO film growth process, in which each cycle ended up with 19 Zn: 1 Al: O sequence. Therefore, the Al dopant was more abundant in the surface layer than that in the whole sample, and the similar results have also been obtained by other groups 23 .…”

Section: Resultssupporting

confidence: 88%

Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

Wang

Kong

et al. 2016

Sci Rep

View full text Add to dashboard Cite

In this communication, we present a versatile and controllable strategy for formation of superhydrophobic micro/nano hierarchical Al doped ZnO (AZO) films with a water contact angle (CA) of 170 ± 4°. This strategy involves a two-step layer-by-layer process employing an atomic layer deposition (ALD) technique followed by a hydrothermal method, and the resulting novel AZO surface layer consists of (100) dominant nano-rice-like AZO seed layer (the water CA of 110 ± 4°) covered with micro-peony-like AZO top. The growth mechanisms and superhydrophobic properties of the hierarchical AZO layer are discussed. It is believed that the present route holds promise for future success in the design and development of practical superhydrophobic materials.

show abstract

Section: Resultssupporting

confidence: 88%

Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

Wang

Kong

et al. 2016

Sci Rep

View full text Add to dashboard Cite

show abstract

“…A similar behavior has been reported for ALD-AZO thin films. 11,13,19,20,40 In summary, different Ti insertion mechanisms following two different precursor sequences are clearly evidenced from the QCM studies, which eventually affects the TZO thin film properties as is discussed in the following section.…”

Section: In Situ Qcm Measurements Of Tzo During Ald Growthmentioning

confidence: 94%

ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells

Coutancier

Zhang

Bernardini

et al. 2020

ACS Appl. Mater. Interfaces

View full text Add to dashboard Cite

In the quest for replacement of indium-tin-oxide (ITO), Ti-doped zinc oxide (TZO) films have been synthesized by atomic layer deposition (ALD) and applied as n-type transparent conductive oxide (TCO). TZO thin films were obtained from titanium (IV) i-propoxide (TTIP), diethyl zinc and water, by introducing TiO2 growth cycle in a ZnO matrix. Process parameters such as the order of precursor introduction, the cycle ratio and the film thickness were optimized. The as-deposited films were analyzed for their surface morphology, elemental stoichiometry, optoelectronic properties and crystallinity, using a variety of characterization techniques. The growth mechanism was investigated for the first time by in situ quartz-crystal microbalance measurements. It evidenced different insertion modes of titanium depending on the precursor introduction, as well as the etching of Zn-Et surface groups by TTIP. Resistivity as low as 1.2 × 10 -3 Ω cm and transmittance > 80% in the visible range were obtained for 72-nm thick films. Finally, the first application of ALD-TZO as TCO was reported. TZO films were successfully implemented as top electrodes in silicon nanowire solar cells. The unique properties of TZO combined with conformal coverage realized by ALD technique make it possible for the cell to show almost flat EQE response, surpassing the bell-like EQE curve seen in devices with sputtered ITO top electrode.

show abstract

“…In addition, if the thickness of sublayers is further reduced to only several ALD cycles, atomically intermixed composite film or doped film can be gained. [ 68 ] In this respect, Sinha et al. prepared zinc oxysulfide (ZnOS, O:S ≈ 7:3) using the 9‐cycle ZnO/1‐cycle ZnS sublayers.…”

Section: Ald For High‐capacity Anodes In Lithium‐ion Batteriesmentioning

confidence: 99%

Atomic Layer Deposition of High‐Capacity Anodes for Next‐Generation Lithium‐Ion Batteries and Beyond

Cao

Meng

2020

Energy & Environ Materials

Self Cite

View full text Add to dashboard Cite

Electrification has great impacts on our modern society. To electrify future transportation, state‐of‐the‐art lithium‐ion batteries (LIBs) are still not sufficient in multiple aspects including cost, energy density, lifespan, and safety. To this end, next‐generation high‐energy LIBs and beyond are highly regarded. In this regard, high‐capacity anodes are undergoing intensive investigation, such as silicon, SnO2, and lithium metal. However, such anode materials are commonly experiencing large volume changes and related issues, which are reflected on mechanical degradation, capacity fading, low efficiency, and unsatisfactory lifetime. To address these challenges, many technical strategies have been investigated. In the past decade, atomic layer deposition (ALD) has emerged as a new promising technique enabling atomic‐scale surface modification and nanoscale design of high‐capacity anodes for high performance. In this review, recent ALD studies on developing high‐capacity anodes for LIBs and beyond are thoroughly summarized. In addition, ALD strategies and their effectiveness in pursing high‐energy LIBs and beyond are discussed. Particularly, we highlighted the latest advances of ALD for addressing the notorious issues associated with Li metal anodes. It is expected that this work will promote the applications of ALD in new battery systems.

show abstract

Atomic Layer Deposition of Al‐doped ZnO Films Using Aluminum Isopropoxide as the Al Precursor

Cited by 15 publications

References 43 publications

Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

Micro/Nano hierarchical peony-like Al doped ZnO superhydrophobic film: The guiding effect of (100) preferred seed layer

ALD of ZnO:Ti: Growth Mechanism and Application as an Efficient Transparent Conductive Oxide in Silicon Nanowire Solar Cells

Atomic Layer Deposition of High‐Capacity Anodes for Next‐Generation Lithium‐Ion Batteries and Beyond

Contact Info

Product

Resources

About