Atomic layer deposition and characterization of Ga-doped ZnO thin films

Saito, Kyoji; Hiratsuka, Yuichi; Omata, Akitoshi; Makino, Hisao; Kishimoto, S.; Yamamoto, Tetsuya; Horiuchi, N.; Hirayama, Hiroyuki

doi:10.1016/j.spmi.2007.04.041

Cited by 40 publications

(13 citation statements)

References 7 publications

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“…This value is lower than other published values for Zr doped ZnO films fabricated by magnetron sputtering for which the resistivity of films 200–300 nm thick was ~2 × 10 −3 Ω·cm [31,37], and it is also below the value of vacuum annealed 450 nm thick film which achieved 9.8 × 10 −4 Ω·cm [33]. It is also comparable to the lowest resistivity values published for other doped ZnO coatings grown by ALD such as Al doped (7.7 × 10 −4 Ω·cm) [17] and Ga doped films (8 × 10 −4 Ω·cm) [20]. …”

Section: Resultsmentioning

confidence: 76%

“…The carrier mobility ( Figure 2 ) decreases as the doping level increases, and this could be due to ionised impurity and possibly grain boundary scattering caused by the grain size reduction. The effect of doping concentration on resistivity (initial decrease followed by an increase), is widely reported for other doped ZnO systems, such as ZnO:Al [ 16 ], ZnO:Ge [ 13 ], ZnO:Ga [ 20 ] and ZnO:Ni [ 42 ]. Having established the Zr doping level that provides the lowest resistivity, the doping level was fixed at 4.8 at.% and the effects of film thickness were investigated.…”

Section: Resultsmentioning

confidence: 99%

“…The dopants used in ZnO should be shallow donors that provide extra ionized electrons. Dopants such as B [ 6 , 7 ], In [ 8 , 9 ], Co [ 10 ], Zr [ 11 , 12 ], Ge [ 13 ], Hf [ 14 ], Sn [ 15 ] have been studied, while the most common dopants are Al [ 16 , 17 ] and Ga [ 3 , 18 , 19 , 20 ]. The reported electrical and optical properties for doped ZnO are being improved by using different dopants in order to compete with ITO, which has a resistivity in the order of 10 -4 Ω·cm and transparency ≥85% [ 21 ].…”

Section: Introductionmentioning

confidence: 99%

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The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

et al. 2015

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Transparent conducting oxides (TCOs), with high optical transparency (≥85%) and low electrical resistivity (10−4 Ω·cm) are used in a wide variety of commercial devices. There is growing interest in replacing conventional TCOs such as indium tin oxide with lower cost, earth abundant materials. In the current study, we dope Zr into thin ZnO films grown by atomic layer deposition (ALD) to target properties of an efficient TCO. The effects of doping (0–10 at.% Zr) were investigated for ~100 nm thick films and the effect of thickness on the properties was investigated for 50–250 nm thick films. The addition of Zr4+ ions acting as electron donors showed reduced resistivity (1.44 × 10−3 Ω·cm), increased carrier density (3.81 × 1020 cm−3), and increased optical gap (3.5 eV) with 4.8 at.% doping. The increase of film thickness to 250 nm reduced the electron carrier/photon scattering leading to a further reduction of resistivity to 7.5 × 10−4 Ω·cm and an average optical transparency in the visible/near infrared (IR) range up to 91%. The improved n-type properties of ZnO: Zr films are promising for TCO applications after reaching the targets for high carrier density (>1020 cm−3), low resistivity in the order of 10−4 Ω·cm and high optical transparency (≥85%).

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Section: Resultsmentioning

confidence: 76%

Section: Resultsmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

et al. 2015

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“…Most studies have been performed by the kind of techniques in order to improve the performance of ZnO films [4,[6][7][8][9][10]. Doping with Al, Ga, In and so on, has been attempted by many groups, resulting in high-quality, highly conductive n-type ZnO films [11].…”

Section: Introductionmentioning

confidence: 99%

Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

Jiang

Liu

Wang

2009

Surface and Coatings Technology

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“…Various techniques have been explored to fabricate Ga‐doped ZnO nanostructures. Some of the most eminent techniques are metal organic chemical vapor deposition, pulsed laser deposition, thermal evaporation, sol–gel, and atomic layer epitaxial method . Except for the sol–gel method, all techniques require notably high temperature, long time, and sophisticated fabrication equipment.…”

Section: Introductionmentioning

confidence: 99%

High‐Power Microwave‐Assisted Ga Doping, an Effective Method to Tailor n‐ZnO/p‐Si Heterostructure Optoelectronic Characteristics

Rana

Shahid

Lee

2018

Physica Status Solidi (a)

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High-power microwave-assisted gallium (Ga) -doped ZnO nanorods (MGZRs) are grown on p-Si substrates, and their optoelectronic characteristics are reported. Gallium nitrate hydrate is mixed with zinc nitrate hexahydrate and hexamethylenetetramine to make 1, 2, and 5% MGZRs in a domestic microwave oven. The MGZR diameter decreased when doping increased from 1 to 2%, but the diameter of the highly doped (5%) sample significantly increased. The EDS results confirm the incorporation of Ga atoms in the ZnO crystal lattice, where an increase in the dopant concentration in growth solution increase the probability of Ga ion incorporation into ZnO crystal lattice. However, exact values for EDS quantification are not found because of Si peaks from the substrate. The high-intensity photoluminescence UV peaks associated to exciton recombination are blue-shifted, and some defects are incorporated by Ga, which respond to the visible and near-IR regions in MGZRs. Furthermore, the n-MGZR/p-Si heterostructures show a diode-like I-V response, where the current levels increase when the doping concentration increase because of an increase in carrier concentration in MGZRs, which is confirmed by Hall-effect measurements. The MGZRs address the low carrier transport issues in undoped microwave-assisted nanorods and are notably effective in altering their optoelectronic characteristics. status solidi physica a Gallium Doping www.pss-a.com

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Atomic layer deposition and characterization of Ga-doped ZnO thin films

Cited by 40 publications

References 7 publications

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

The Effects of Zr Doping on the Optical, Electrical and Microstructural Properties of Thin ZnO Films Deposited by Atomic Layer Deposition

Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

High‐Power Microwave‐Assisted Ga Doping, an Effective Method to Tailor n‐ZnO/p‐Si Heterostructure Optoelectronic Characteristics

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