Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

Jiang, Minhong; Liu, Xinyu; Wang, Hua

doi:10.1016/j.surfcoat.2009.06.014

Cited by 36 publications

(13 citation statements)

References 25 publications

(23 reference statements)

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“…Table 2. This result is against the report of M. Jiang et al [10] who observed the band gap shift from 3.24 to 3.29 eV for the Bi-doped ZnO thin films prepared by rf magnetron sputtering with increasing the argon pressure from 1.0 to 3.0 Pa. F. Chouikh et al [18] who found that the band gap shift from 3.19 to 3.24 eV for Bi-doped ZnO films deposited by ultrasonic spray pyrolysis (to 5 mol% Bi concentration). They suggested that narrowing of optical band gap might be attributed to the forming of Bi impurity energy level.…”

Section: Surface Morphologycontrasting

confidence: 95%

“…r.f. magnetron sputtering, pulsed laser deposition (PLD), chemical vapor deposition (CVD), evaporation, metal organic chemical vapor deposition (MOCVD), sol-gel, and spray pyrolysis [10][11][12][13][14][15][16][17]. Sol-gel technique is very low-cost effective due to nanostructural preparation under low-temperature, and it is simple to control the dopant composition.…”

Section: Introductionmentioning

confidence: 99%

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ZnO Doped with Bismuth in Case of In-Phase Behavior for Solar Cell Application

Krongarrom¹,

Rattanachan²,

Fangsuwannarak³

2012

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Zinc Oxide (ZnO) nanostructure thin films doped with bismuth atoms were initially achieved by spin coating preparation from zinc acetate gel on the fused quartz substrate. The optical and structural properties have been preliminary studied in order to obtain more understanding the optimized factors for transparent conductive oxides (TCOs) of thin film solar cell. The optical transmittance was higher than 90% in the visible range for all films. In addition, the optical band gap of the prepared films calculated by Tauc plot showed the change of lightly blue shift but no significantly changed with increasing of Bi doping concentration. The glancing incident X-ray diffraction result showed that the Bi doped in ZnO nanostructure thin films after annealing have polycrystalline hexagonal wurtzite structure and good preferential orientation along c-axis. This chemical characterization indicated that in-phase behavior occurred in low Bi dopant content between 0.2 -1.0 at.% Bi content, hence 1 atomic percentage of Bi content was uppermost to obtain preferential orientation in this study. However, the quality of the films surface was improved due to the larger number of coating layers but the electrical properties was improved. The tentative study in term of electrical behavior was investigated for application in TCO film of solar cell. The electrical property showed that more multi ZnO layers affected on an increase in the electrical conductivity of the films.

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Section: Surface Morphologycontrasting

confidence: 95%

Section: Introductionmentioning

confidence: 99%

ZnO Doped with Bismuth in Case of In-Phase Behavior for Solar Cell Application

Krongarrom¹,

Rattanachan²,

Fangsuwannarak³

2012

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show abstract

“…As a new type of functional material, ZnO has excellent optical and electrical properties, high chemical and mechanical stability and good heat stability together with nontoxic in nature. With exciton binding energy of 60 meV (the ionization energy of 26 meV at room temperature) and strong ultraviolet stimulated emission, ZnO prepared under different conditions can be applied for various purposes, including laser diodes [1], ultraviolet detectors [2], gas sensors [3], transparent electrode [4,5], electroluminescent material [6,7], surface acoustic wave devices [8], etc. ZnO, following GaN, has become a new focus of the research on the wide band-gap semiconductor.…”

Section: Introductionmentioning

confidence: 99%

The microstructure and photoluminescence of Cu-doped ZnO nano-crystal thin films prepared by sol–gel method

Wang

Zhou

Liu

2009

Journal of Alloys and Compounds

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“…Techniques such as slip casting, extrusion, or powder pressing have been so far used for manufacturing of support, followed by coating of several microns layers of different types of ceramics on it. For making of NF, one or more layers of coatings are necessary having pore size in the range of 1-50 nm to cover the support [6][7][8][9][10]. Among various methods of coating, chemical vapor deposition, sputtering [11], laser ablation, and sol-gel processing are used as preparation methods for thin films.…”

Section: Introductionmentioning

confidence: 99%

Synthesis of titania–γ-alumina multilayer nanomembranes on performance-improved alumina supports for wastewater treatment

Shayesteh

Samimi

Afarani

et al. 2015

Desalination and Water Treatment

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A B S T R A C TThe γ-alumina and titania nanocrystallites were coated by sol-gel method on alumina supports respectively, as sub-layer and top-layer to prepare nanomembranes. The analysis represented a meso-porous structure for the coating layers of nanomembrane with the average pore size of 5.8 nm. The performance of the nanomembranes was investigated for permeability of demineralized water as well as rejection of ions and microorganisms using a model wastewater. Results show that in the range of 1-10 bar applied pressure, the permeability was reduced. At higher than 10 bars, with the increase of pressure, the permeability almost stayed constant due to the increase of flux. The multilayer nanomembranes showed different rejections for ions up to 25% but completely separation of the microorganisms.

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Conductive and transparent Bi-doped ZnO thin films prepared by rf magnetron sputtering

Cited by 36 publications

References 25 publications

ZnO Doped with Bismuth in Case of In-Phase Behavior for Solar Cell Application

ZnO Doped with Bismuth in Case of In-Phase Behavior for Solar Cell Application

The microstructure and photoluminescence of Cu-doped ZnO nano-crystal thin films prepared by sol–gel method

Synthesis of titania–γ-alumina multilayer nanomembranes on performance-improved alumina supports for wastewater treatment

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