Atomic Layer Deposition Alumina‐Mediated Graphene Transfer for Reduced Process Contamination

Shivayogimath, Abhay; Whelan, Patrick Rebsdorf; Mackenzie, David; Luo, Birong; Bøggild, Peter; Booth, Tim

doi:10.1002/pssr.201900424

Cited by 5 publications

(8 citation statements)

References 29 publications

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“…Polymer-free and organic solventfree; gold film can be used directly as an electrode; [144] eco-friendly and CMOS-compatible transfer [147] Metal impurities; small amounts of defects; [144] high cost; difficult to scale up; [138] brittle under bending stress; require careful control of Al 2 O 3 thickness; [146] crystallinity of MoO 3 and etching parameters [147] [ 91,138,140,144,146,147] Small moleculeassisted transfer Naphthalene, pentacene, rosin, cera alba, camphor, wax, paraffin, MMA, etc.…”

Section: Pmma-assisted Transfermentioning

confidence: 99%

Section: Small Molecule-assisted Transfermentioning

confidence: 99%

Section: Transfer Of Large‐area Graphene Synthesized By Cvd Techniquementioning

confidence: 99%

“…For example, Al 2 O 3 serves not only as a support layer, but also as a key dielectric gate in graphene‐based devices. [ 146 ] It can be deposited on graphene surface by atomic layer deposition (ALD), Al 2 O 3 /graphene stack can be mechanically delaminated from Cu foil and transferred to target substrate (Figure 5b). This strategy ensures the high uniformity deposition of Al 2 O 3 , and prevents graphene from damage and residues.…”

Section: Transfer Of Large‐area Graphene Synthesized By Cvd Techniquementioning

confidence: 99%

“…This strategy ensures the high uniformity deposition of Al 2 O 3 , and prevents graphene from damage and residues. [146] Recently, Moon et al [147] developed an ecofriendly and complementary metal oxide semiconductor (CMOS)-compatible transfer process by using water-soluble MoO 3 as a support layer. Hydrogen-terminated semiconductor Ge was employed as catalytic substrate for graphene growth.…”

Section: Toward the Clean Transfer Of Graphenementioning

confidence: 99%

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Recent Progress in the Transfer of Graphene Films and Nanostructures

Gao

Chen

et al. 2021

Small Methods

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electronics, [9] photonics, [10,11] biosensors, [12,13] etc.One reason that graphene research has developed so fast is the relatively simple and cheap production procedures. Many production approaches have been established, such as top-down approaches, including: mechanical exfoliation, [14] liquid phase exfoliation, [15] reduction of graphene oxide (GO), [16] and electrochemical exfoliation, [17] etc.; as well as bottomup approaches, including: epitaxial growth on SiC, [18] chemical vapor deposition (CVD), [19] etc. Among these approaches, CVD on metal substrates has been widely used to synthesize high quality, large-area graphene (LAG) films. The production of square meters of graphene has been realized, and the state of art devices have been demonstrated. [20] CVD graphene films are ready for applications like transparent conductive films, [20,21] wearable transparent sensors, [22] and ionic/molecular nanofiltration membrane. [23] Despite graphene's extraordinary electronic properties and fast progress in production, zero bandgap of graphene hinders the application of graphene as an electronic transistor. [24] One solution is to engineer graphene into graphene nanostructures (GNs), e.g., graphene nanoribbons (GNRs), [25] graphene nanomeshes (GNMs), [26] graphene quantum dots (GQDs), [27] and other complex shaped nanostructures. [28] Theory predicted that GNRs' bandgap (ΔE(W)) varies as a function of the ribbon width W, ΔE(W) = α W −1 , α is a coefficient with unit [nm eV]. [29][30][31][32] Contrary to the fixed bandgap of a semiconductor-silicon, the bandgap of GNs can be precisely tuned by regulating their edge structure, shape, size, and crystallographic orientation. [26,[33][34][35] Currently, extremely small and dense graphene based-nanoelectronic devices have been achieved by top-down approaches, e.g., electron-beam lithography, [36] block copolymer lithography, [37] and nanosphere lithography. [38] However, top-down patterning of graphene to nanometer scale is challenging without compromising its transport properties. As the pattern density increases, the introduced edge disorders will gradually dominate the electronic properties. Bottom-up approaches, on the other hand, provide an opportunity to synthesize graphene with well-defined edges via solution-mediated or surface-assisted cyclodehydrogenation reactions. [39,40] Since CVD-grown graphene films and surface-assisted grown GNs are generally synthesized on metal foils, their further applications require post-transfer to target substrates. [12,[41][42][43] The one-atom-thick graphene has excellent electronic, optical, thermal, and mechanical properties. Currently, chemical vapor deposition (CVD) graphene has received a great deal of attention because it provides access to large-area and uniform films with high-quality. This allows the fabrication of graphene based-electronics, sensors, photonics, and optoelectronics for practical applications. Zero bandgap, however, limits the application of a graphene film as electronic transistor. The most commonly u...

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Section: Pmma-assisted Transfermentioning

confidence: 99%

Section: Small Molecule-assisted Transfermentioning

confidence: 99%

Section: Transfer Of Large‐area Graphene Synthesized By Cvd Techniquementioning

confidence: 99%

Section: Transfer Of Large‐area Graphene Synthesized By Cvd Techniquementioning

confidence: 99%

Section: Toward the Clean Transfer Of Graphenementioning

confidence: 99%

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Recent Progress in the Transfer of Graphene Films and Nanostructures

Gao

Chen

et al. 2021

Small Methods

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Wafer-scale graphene quality assessment using micro four-point probe mapping

et al. 2020

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Micro four-point probes (M4PP) provide rapid and automated lithography-free transport properties of planar surfaces including two-dimensional materials. We perform sheet conductance wafer maps of graphene directly grown on a 100 mm diameter SiC wafer using a multiplexed seven-point probe with minor additional measurement time compared to a four-point probe. Comparing the results of three subprobes we find that compared to a single-probe result, our measurement yield increases from 72%–84% to 97%. The additional data allows for correlation analysis between adjacent subprobes, that must measure the same values in case the sample is uniform on the scale of the electrode pitch. We observe that the relative difference in measured sheet conductance between two adjacent subprobes increase in the transition between large and low conductance regions. We mapped sheet conductance of graphene as it changed over several weeks. Terahertz time-domain spectroscopy conductivity maps both before and after M4PP mapping showed no significant change due to M4PP measurement, with both methods showing the same qualitative changes over time.

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Process Yield and Device Stability in Sol-Gel Alumina Passivation Layer-Based GFETs

Premsai

2023

IEEE Trans. Electron Devices

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Atomic Layer Deposition Alumina‐Mediated Graphene Transfer for Reduced Process Contamination

Cited by 5 publications

References 29 publications

Recent Progress in the Transfer of Graphene Films and Nanostructures

Recent Progress in the Transfer of Graphene Films and Nanostructures

Wafer-scale graphene quality assessment using micro four-point probe mapping

Process Yield and Device Stability in Sol-Gel Alumina Passivation Layer-Based GFETs

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