wafer-scale, with good crystallinity and with contamination levels compatible with large-scale back-end-of-line (BEOL) integration. At present, chemical vapor deposition (CVD) on catalytic copper (Cu) substrates is widely recognized as the most promising route to obtain scalable monolayer graphene for electronic and optoelectronic applications. [1][2][3][4] However, significant hurdles are limiting the actual integration of CVD graphene grown on Cu for most applications. In the first instance, the unavoidable transfer process over wafer-scale is rather cumbersome and introduces contamination, unintentional doping, and mechanical stress, [5][6][7] which adversely impact the physical integrity and electrical performance [8] of the graphene layer. The significant challenge involved in carrying out this seemingly straightforward task is reflected by the vast literature on large-scale transfer processes. Second, metallic contamination levels in transferred CVD graphene grown on Cu are typically well-above the specifications requested for BEOL integration. [6] Clearly, asThe adoption of graphene in electronics, optoelectronics, and photonics is hindered by the difficulty in obtaining high-quality material on technologically relevant substrates, over wafer-scale sizes, and with metal contamination levels compatible with industrial requirements. To date, the direct growth of graphene on insulating substrates has proved to be challenging, usually requiring metal-catalysts or yielding defective graphene. In this work, a metal-free approach implemented in commercially available reactors to obtain high-quality monolayer graphene on c-plane sapphire substrates via chemical vapor deposition is demonstrated. Low energy electron diffraction, low energy electron microscopy, and scanning tunneling microscopy measurements identify the Al-rich reconstruction9° of sapphire to be crucial for obtaining epitaxial graphene. Raman spectroscopy and electrical transport measurements reveal high-quality graphene with mobilities consistently above 2000 cm 2 V −1 s −1 . The process is scaled up to 4 and 6 in. wafers sizes and metal contamination levels are retrieved to be within the limits for back-end-ofline integration. The growth process introduced here establishes a method for the synthesis of wafer-scale graphene films on a technologically viable basis.
We investigated toxicity of 2–3 layered >1 μm sized graphene oxide (GO) and reduced graphene oxide (rGO) in mice following single intratracheal exposure with respect to pulmonary inflammation, acute phase response (biomarker for risk of cardiovascular disease) and genotoxicity. In addition, we assessed exposure levels of particulate matter emitted during production of graphene in a clean room and in a normal industrial environment using chemical vapour deposition. Toxicity was evaluated at day 1, 3, 28 and 90 days (18, 54 and 162 μg/mouse), except for GO exposed mice at day 28 and 90 where only the lowest dose was evaluated. GO induced a strong acute inflammatory response together with a pulmonary (Serum-Amyloid A, Saa3) and hepatic (Saa1) acute phase response. rGO induced less acute, but a constant and prolonged inflammation up to day 90. Lung histopathology showed particle agglomerates at day 90 without signs of fibrosis. In addition, DNA damage in BAL cells was observed across time points and doses for both GO and rGO. In conclusion, pulmonary exposure to GO and rGO induced inflammation, acute phase response and genotoxicity but no fibrosis.
Only a few of the vast range of potential two-dimensional materials (2D) have been isolated or synthesised to date. Typically, 2D materials are discovered by mechanically exfoliating naturally occurring bulk crystals to produce atomically thin layers, after which a material-specific vapour synthesis method must be developed to grow interesting candidates in a scalable manner. Here we show a general approach for synthesising thin layers of two-dimensional binary compounds. We apply the method to obtain high quality, epitaxial MoS 2 films, and extend the principle to the synthesis of a wide range of other materials—both well-known and never-before isolated—including transition metal sulphides, selenides, tellurides, and nitrides. This approach greatly simplifies the synthesis of currently known materials, and provides a general framework for synthesising both predicted and unexpected new 2D compounds.
We demonstrate a simple method for transferring large areas (up to A4-size sheets) of CVD graphene from copper foils onto a target substrate using a commercially available polyvinyl alcohol polymer foil as a carrier substrate and commercial hot-roll office laminator. Through the use of terahertz time-domain spectroscopy and Raman spectroscopy, large-area quantitative optical contrast mapping, and the fabrication and electrical characterization of ∼50 individual centimeter-scale van der Pauw field effect devices, we show a nondestructive technique to transfer large-area graphene with low residual doping that is scalable, economical, reproducible, and easy to use and that results in less doping and transferinduced damage than etching or electrochemical delamination transfers. We show that the copper substrate can be used multiple times with minimal loss of material and no observable reduction in graphene quality. We have additionally demonstrated the transfer of multilayer hexagonal boron nitride from copper and iron foils. Finally, we note that this approach allows graphene to be supplied on stand-alone polymer supports by CVD graphene manufacturers to end users, with the only equipment and consumables required to transfer graphene onto target substrates being a commercial office laminator and water.
We investigate the nucleation defect-triggered oxidation of Cu covered by CVD graphene during postannealing in air. The results reveal that different growth conditions may induce imperfect nucleation of graphene, and cause creation of defects near the nucleation point such as pin holes and amorphous carbon. These defects would serve as a pathway for the diffusion of O2 during thermal annealing, allowing oxidation of Cu to progress gradually from the nucleation center toward the growth edge. The oxidation process follows the graphene morphology closely; the shape of the oxidized area of Cu has a striking resemblance to that of the graphene flakes. Our work demonstrates that inferior graphene nucleation in CVD processes can compromise the oxidation resistance of a graphene-coated Cu substrate, and indirectly reveal the structure and integrity of graphene, which is of fundamental importance for the quality monitoring and control of graphene growth, for understanding the mechanisms of graphene nucleation and growth, and has implications for graphene’s use in electronic and passivation applications.
1We present a simple framework for assessing both the homogeneity of large-area graphene devices and the accuracy of electrical measurements. Finite element simulations and electrical measurements show that non-uniform doping in graphene can lead to systematic overestimation of the field-effect mobility and other electrical parameters, which can be corrected using the presented methods. ABSTRACTWith the increasing availability of large-area graphene, the ability to rapidly and accurately assess the quality of the electrical properties has become critically important. For practical applications, spatial variability in carrier density and carrier mobility must be controlled and minimized. We present a simple framework for assessing the quality and homogeneity of large-area graphene devices. The field effect in both exfoliated graphene devices encapsulated in hexagonal boron nitride and chemical vapor-deposited (CVD) devices was measured in dual current-voltage configurations and used to derive a single, gate-dependent effective shape factor, ß, for each device. ß is a sensitive indicator of spatial homogeneity that can be obtained from samples of arbitrary shape. All 50 devices investigated in this study show a variation (up to tenfold) in ß as a function of the gate bias. Finite element simulations suggest that spatial doping inhomogeneity, rather than mobility inhomogeneity, is the primary cause of the gate dependence of ß, and that measurable variations of ß can be caused by doping variations as small as 10 10 cm −2 . Our results suggest that local variations in the position of the Dirac point alter the current flow and thus the effective sample shape as a function of the gate bias. We also found that such variations lead to systematic errors in carrier mobility calculations, which can be revealed by inspecting the corresponding ß factor.
Despite its great potential for a wide variety of devices, especially mid-infrared biosensors and photodetectors, graphene plasmonics is still confined to academic research. A major reason is the fact that, so far, expensive and low-throughput lithography techniques are needed to fabricate graphene nanostructures. Here, we report for the first time a detailed experimental study on electrostatically tunable graphene nanohole array surfaces with periods down to 100 nm, showing clear plasmonic response in the range ∼1300-1600 cm, which can be fabricated by a scalable nanoimprint technique. Such large area plasmonic nanostructures are suitable for industrial applications, for example, surface-enhanced infrared absorption (SEIRA) sensing, as they combine easy design, extreme field confinement, and the possibility to excite multiple plasmon modes enabling multiband sensing, a feature not readily available in nanoribbons or other localized resonant structures.
This is an electronic reprint of the original article. This reprint may differ from the original in pagination and typographic detail.
scite is a Brooklyn-based organization that helps researchers better discover and understand research articles through Smart Citations–citations that display the context of the citation and describe whether the article provides supporting or contrasting evidence. scite is used by students and researchers from around the world and is funded in part by the National Science Foundation and the National Institute on Drug Abuse of the National Institutes of Health.
hi@scite.ai
10624 S. Eastern Ave., Ste. A-614
Henderson, NV 89052, USA
Copyright © 2024 scite LLC. All rights reserved.
Made with 💙 for researchers
Part of the Research Solutions Family.