Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties

Guziewicz, E.; Ratajczak, R.; Stachowicz, M.; Snigurenko, D.; Krajewski, T.; Mieszczynski, Cyprian; Mazur, K.; Witkowski, B.S.; Dłuźewski, P.; Morawiec, Krzysztof; Turos, A.

doi:10.1016/j.tsf.2017.08.014

Cited by 18 publications

(16 citation statements)

References 31 publications

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“…Consequently, a partial out‐diffusion of RE atoms and their precipitation on the surface takes place. This observation is consistent with our previous results . As can be seen in Figure , the behavior of Yb, Dy, and Pr ions after annealing is also similar and after thermal treatment about 63% of RE ions remain in the Zn substitutional lattice positions.…”

Section: Resultssupporting

confidence: 93%

“…As can be seen in Figure , the behavior of Yb, Dy, and Pr ions after annealing is also similar and after thermal treatment about 63% of RE ions remain in the Zn substitutional lattice positions. The fractions of substitutional RE atoms have been calculated based on the procedure well‐known in literature which have been used and described by us before …”

Section: Resultsmentioning

confidence: 99%

“…As show our previous studies any radiative transitions characteristic for virgin ZnO (NBE and DLE) are quenched by structural defects introduced by implantation. Upon RTA, a crystal structure recovery takes place and, as a consequence, the NBE band appears together with DLE …”

Section: Resultsmentioning

confidence: 99%

“…The implanted RE ions are usually optically inactive, but can be optically activated by annealing producing crystal lattice recovery . In the case of RE ions implanted into ZnO (and other II–VI materials) an activation process can be assigned to a change of oxidation state of implanted RE ions from 2 + to the optically active 3 + state . Therefore for annealed ZnO implanted with RE ions apart from the ZnO emission bands one might expect additional lines characteristic for the 4 f transitions of a specific RE ions as presented in Figure .…”

Section: Resultsmentioning

confidence: 99%

“…The details of the growth process can be found in Ref. . The samples thickness was between 700 and 1400 nm.…”

Section: Methodsmentioning

confidence: 99%

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Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Ratajczak

Guziewicz

Prucnal

et al. 2018

Physica Status Solidi (a)

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Epitaxial ZnO thin films grown by atomic layer deposition on GaN/Al2O3 substrates are implanted with Yb, Dy, and Pr ions to a fluence of 5 × 1014 at cm−2 and subsequently anneals at 800 °C using a rapid thermal annealing (RTA) system. Structural properties of implanted and annealed ZnO films and the optical response are evaluated by channeling Rutherford backscattering (RBS/c) and photoluminescence spectroscopy (PL), respectively. RTA leads to a partial removal of the post‐implantation defects with simultaneous native defects transformation and optical activation of RE ions. It is found that two groups of defects: defects formed during implantation process and native defects, play an important role in the luminescence in the visible region. The room temperature PL spectra obtained from annealed ZnO:RE films do not show sharp PL lines from transitions within the RE 4f shell, but show near band gap emission and defect related emission, which energy emission is controlled by the RE atoms. It suggests a presence of RE‐related complexes that are formed during high‐temperature annealing in oxygen atmosphere. The excitonic and defect emission modified by RE ions create an optical response of the system resulting in a specific color of the emitted light.

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Section: Resultssupporting

confidence: 93%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

“…The details of the growth process can be found in Ref. . The samples thickness was between 700 and 1400 nm.…”

Section: Methodsmentioning

confidence: 99%

See 3 more Smart Citations

Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Ratajczak

Guziewicz

Prucnal

et al. 2018

Physica Status Solidi (a)

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Optical Response of Epitaxial ZnO Films Grown by Atomic Layer Deposition and Coimplanted with Dy and Yb

Guziewicz

Kobyakov

Ratajczak

et al. 2020

Physica Status Solidi (b)

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In this study, structural and optical properties of ZnO:Dy, ZnO:Yb, and ZnO:(Dy,Yb) films are investigated. Epitaxial ZnO films are grown by atomic layer deposition at 300 °C and implanted with Yb and Dy ions to the fluence of 5 × 1014 cm−2. The effects of Dy and Yb implantation, Dy/Yb coimplantation, and postgrowth annealing are studied by channeling Rutherford backscattering spectrometry (RBS/c) and room‐temperature photoluminescence (RT PL). The damage built up after implantation is found to be similar for Dy and Yb ions, but crystal structure recovery after annealing is more efficient for ZnO:Yb than for ZnO:Dy, when similar annealing conditions are applied. Colorimetric analysis of the RT PL spectra shows that (Dy,Yb) coimplantation allows shifting the optical response of ZnO:Dy films toward white color light. The correlated color temperature can be tuned in this way from 2500 to 3200 K, which makes these films attractive for indoor applications.

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The effect of Yb doping on ZnO thin films obtained via a low-temperature spin coating method

López-Mena

Ceballos-Sánchez

Hooper

et al. 2020

J Mater Sci: Mater Electron

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Atomic layer deposited ZnO films implanted with Yb: The influence of Yb location on optical and electrical properties

Cited by 18 publications

References 31 publications

Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Luminescence in the Visible Region from Annealed Thin ALD‐ZnO Films Implanted with Different Rare Earth Ions

Optical Response of Epitaxial ZnO Films Grown by Atomic Layer Deposition and Coimplanted with Dy and Yb

The effect of Yb doping on ZnO thin films obtained via a low-temperature spin coating method

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