Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Mahata, Chandreswar; Mallik, S.; Das, Tanmoy; Maiti, C. K.; Dalapati, Goutam Kumar; Tan, Cheng; Chia, C. K.; Gao, Han; Kumar, M. K.; Chiam, Sing Yang; Tan, Hui Ru; Seng, Hwee Leng; Z., D.; Miranda, E.

doi:10.1063/1.3684803

Cited by 29 publications

(17 citation statements)

References 18 publications

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“…However, chemical shifts at +20.9 and +18.7 eV from the bulk Ga peak were observed; the same type of shift was also observed by Mukherjee et al The two peaks at binding energies 22 and 17 eV were attributed to Ga 2+ and Ga 3+ (Ga 2 O 3 ), respectively . The O 2s XP spectrum (Figure c) peaks at 22.0 and 23.7 eV for Ga–Al–O and Ga–O–Al, respectively, are attributed to the formation of mixed bonding at the interface …”

Section: Results and Discussionsupporting

confidence: 62%

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Singh

Sharma

Ghosh³

et al. 2019

ACS Sustainable Chem. Eng.

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The ever increasing demand for sustainable energy and chemicals in association with the declining reserve for fossil fuel, are stimulating the search for alternative feedstocks and processes. In this line, the catalytic upgrading of nonedible oils into high-yield commodity chemicals, including saturates and aromatics, has been studied. Yeast single cell oil (SCO) was converted into benzene, toluene, and xylenes (BTX) over a Ga−γ-alumina catalyst, at 450 °C. The yield of aromatics was found to improve with the incorporation of Ga. The physiochemical properties of the catalyst were characterized using different analytical techniques and reaction parameters were optimized using design-of-experiment (DOE). It was observed that the gallium promotes the dehydrogenation activity and results in an overall increase in aromatic yield. Maximum 89.4% conversion of SCO, with aromatic selectivity up to 77.7%, was achieved.

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Section: Results and Discussionsupporting

confidence: 62%

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Singh

Sharma

Ghosh³

et al. 2019

ACS Sustainable Chem. Eng.

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“…Such phenomenon has been detected by from Hong et al for ALD-derived HfO 2 on InGaAs. 51 According to the slope of the linear region, the barrier height, Φ B , of 2.35 eV, with respect to the conduction band offset between Al 2 O 3 and InGaAs, has been obtained.…”

Section: Interface Bonding States and Depth Profilementioning

confidence: 99%

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer

Gao

Chen

et al. 2014

ACS Appl. Mater. Interfaces

185

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In current work, the effect of the growth cycles of atomic-layer-deposition (ALD) derived ultrathin Al2O3 interfacial passivation layer on the interface chemistry and electrical properties of MOS capacitors based on sputtering-derived HfTiO as gate dielectric on InGaAs substrate. Significant suppression of formation of Ga-O and As-O bond from InGaAs surface after deposition of ALD Al2O3 with growth cycles of 20 has been achieved. X-ray photoelectron spectroscopy (XPS) measurements have confirmed that suppressing the formation of interfacial layer at HfTiO/InGaAs interface can be achieved by introducing the Al2O3 interface passivation layer. Meanwhile, increased conduction band offset and reduced valence band offset have been observed for HfTiO/Al2O3/InGaAs gate stack. Electrical measurements of MOS capacitor with HfTiO/Al2O3/InGaAs gate stacks with dielectric thickness of ∼4 nm indicate improved electrical performance. A low interface-state density of (∼1.9) × 10(12) eV(-1) cm(-2) with low frequency dispersion ( ∼ 3.52%), small border trap density of 2.6 × 10(12) cm(-2), and low leakage current of 1.17 × 10(-5) A/cm(2) at applied gate voltage of 1 V have been obtained. The involved leakage current conduction mechanisms for metal-oxide-semiconductor (MOS) capacitor devices with and without Al2O3 interface control layer also have been discussed in detail.

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“…Thermally grown Ga 2 O 3 on GaN forms a low trap density interface [5][6][7][8] and could thus serve as a good initial layer for GaN MOS devices. Mahata et al 14 In this study, GaN metal oxide semiconductor capacitors (MOSCAPs) were fabricated with atomic layer deposition (ALD) TiO 2 /Al 2 O 3 nanostacks on Ga 2 O 3 as the gate dielectric. 9-11 TiO 2 processes a high dielectric constant [e ¼ 25-80], but it has small bandgap and a small band offset with GaN.…”

Section: Introductionmentioning

confidence: 99%

Atomic layer deposition TiO2–Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

Wei

Edgar

Briggs

et al. 2014

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Articles you may be interested inCharacterization of plasma-enhanced atomic layer deposition of Al2O3 using dimethylaluminum isopropoxide J. Vac. Sci. Technol. A 32, 021514 (2014); 10.1116/1.4866378 Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxidesemiconductor field-effect transistor applications Appl. Phys. Lett. 100, 062905 (2012); 10.1063/1.3684803 Al 2 O 3 / NbAlO / Al 2 O 3 sandwich gate dielectric film on InP Appl. Phys. Lett. 96, 022904 (2010);This research focuses on the benefits and properties of TiO 2 -Al 2 O 3 nanostack thin films deposited on Ga 2 O 3 /GaN by plasma-assisted atomic layer deposition (PA-ALD) for gate dielectric development. This combination of materials achieved a high dielectric constant, a low leakage current, and a low interface trap density. Correlations were sought between the films' structure, composition, and electrical properties. The gate dielectrics were approximately 15 nm thick and contained 5.1 nm TiO 2 , 7.1 nm Al 2 O 3 , and 2 nm Ga 2 O 3 as determined by spectroscopic ellipsometry. The interface carbon concentration, as measured by x-ray photoelectron spectroscopy depth profile, was negligible for GaN pretreated by thermal oxidation in O 2 for 30 min at 850 C. The RMS roughness slightly increased after thermal oxidation and remained the same after ALD of the nanostack, as determined by atomic force microscopy. The dielectric constant of TiO 2 -Al 2 O 3 on Ga 2 O 3 /GaN was increased to 12.5 compared to that of pure Al 2 O 3 (8-9) on GaN. In addition, the nanostack's capacitance-voltage (C-V) hysteresis was small, with a total trap density of 8.74 Â 10 11 cm À2 . The gate leakage current density (J ¼ 2.81 Â 10 À8 A/cm 2 ) was low at þ1 V gate bias. These results demonstrate the promising potential of PA-ALD deposited TiO 2 /Al 2 O 3 for serving as the gate dielectric on Ga 2 O 3 /GaN based MOS devices.

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Cited by 29 publications

References 18 publications

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer

Atomic layer deposition TiO2–Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

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Atomic layer deposited (TiO2)x(Al2O3)1−x/In0.53Ga0.47As gate stacks for III-V based metal-oxide-semiconductor field-effect transistor applications

Cited by 29 publications

References 18 publications

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Converting Lignocellulosic Pentosan-Derived Yeast Single Cell Oil into Aromatics: Biomass to Bio-BTX

Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al2O3 Passivation Layer

Atomic layer deposition TiO2–Al2O3 stack: An improved gate dielectric on Ga-polar GaN metal oxide semiconductor capacitors

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Modulating the Interface Quality and Electrical Properties of HfTiO/InGaAs Gate Stack by Atomic-Layer-Deposition-Derived Al₂O₃ Passivation Layer