Atomic force probe for sidewall scanning of nano- and microstructures

Dai, Gaoliang; Wolff, Helmut; Pohlenz, Frank; Danzebrink, Hans‐Ulrich; Wilkening, G.

doi:10.1063/1.2198516

Cited by 55 publications

(34 citation statements)

References 5 publications

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“…However, these methods are not really suitable for scanning the sidewall of a Si-fin along the channel direction [current flow direction, see Fig. 1(a)], even using assembled cantilever probes, as recently reported by Dai et al [16], [17]. In the other hand, Gondran et al [18] proposed to cleave the sample along the length of the fin (channel direction) and polish the sample edge using focused ion beam to approach the fin's sidewall.…”

Section: Introductionmentioning

confidence: 92%

A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM

Tang

Bayot

Reckinger

et al. 2009

IEEE Trans. Nanotechnology

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The gate oxide reliability and the electrical behavior of FinFETs are directly related to the surface characteristics of the fin vertical sidewalls. The surface roughness of the fin sidewalls is one of the most important structural parameters to be monitored in order to optimize the fin patterning and postetch treatments. Because of the nanometer-scale dimensions of the fins and the vertical orientation of the sidewall surface, their roughness measurement is a serious challenge. In this paper, we describe a simple and effective method for measuring the sidewall morphology of silicon fins by conventional atomic force microscopy. The present methodology has been employed to analyze fins as etched by reactive ion etching and fins repaired by sacrificial oxidation. The results show that sacrificial oxidation not only reduces the roughness of the sidewalls, but also rounds the top corners of silicon fins. The present method can also be applied to characterize sidewall roughness of other nanostructures and materials such as the polysilicon gate of transistors or nanoelectromechanical beams.Index Terms-Atomic force microscopy (AFM), FinFET, roughness of silicon fin sidewall, sacrificial oxidation.

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Section: Introductionmentioning

confidence: 92%

A Simple Method for Measuring Si-Fin Sidewall Roughness by AFM

Tang

Bayot

Reckinger

et al. 2009

IEEE Trans. Nanotechnology

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“…Although SEM is relatively inexpensive and a less time-consuming method, its capabilities are stretched for sub-nanometre film observation. Additionally when using non-destructive full wafer SEM tools or imaging with minimal sample preparation, be issues with the sample geometry can make it difficult to get a signal from the sidewall back to the detectors [5]. In most cases, SEM images do not provide sufficiently high resolution for gate stack layer thickness measurements.…”

Section: Gate Stack Measurementsmentioning

confidence: 99%

Estimation of Arterial Stiffness by Time–Frequency Analysis of Pulse Wave

Saito

Yamamoto

Shibayama

et al. 2011

Jpn. J. Appl. Phys.

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Next generation planar and non-planar complementary metal oxide semiconductor (CMOS) structures are three-dimensional nanostructures with multi-layer stacks that can contain films thinner than ten atomic layers. The high resolution of transmission electron microscopy (TEM) is typically chosen for studying properties of these stacks such as film thickness, interface and interfacial roughness. However, TEM sample preparation is time-consuming and destructive, and TEM analysis is expensive and can provide problematic results for surface and interface roughness. Therefore, in this paper, we present the use of direct measurements of sidewall surface structures by conventional atomic force microscopy (AFM) as an alternative or complementary method for studying multi-layer film stacks and as the preferred method for studying FinFET sidewall surface roughness. In addition to these semiconductor device applications, this AFM sidewall measurement technique could be used for other three-dimensional nanostructures.

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“…To determine the roughness or waviness of sidewalls of the microstructures such as microinjection nozzles or microgears, and also edge roughness measurement of integrated circuit (IC) structures, a modified AFM probe capable of sidewall imaging seems to be essential. So, Dai et al [23] proposed assembled cantilever probes (ACPs) for direct and non-destructive sidewall measurement of nano-and microstructures that provided the true three-dimensional measurements of these structures. Recently, Chang et al [24] analyzed the resonant frequency and flexural sensitivity of an AFM with one of these ACPs, which consists of a horizontal cantilever and a vertical extension located at its free end.…”

Section: Introductionmentioning

confidence: 99%