Atomic force microscopy studies of substrate cleaning using tris(dimethylamino)arsenic and tris(dimethylamino) antimony and investigations of surface decomposition mechanisms

Whitaker, T. J.; Martin, Trevor; Johnson, Andrew; Pidduck, Allan J.; Newey, J.

doi:10.1016/0022-0248(95)01071-8

Cited by 14 publications

(9 citation statements)

References 12 publications

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“…We hypothesize that the dimethyl amine ALD reaction product is responsible for the native oxide etch. We base this assumption on the fact that: similar observations have been made for other amine-based ALD processes and the thermal decomposition of amine metal organic species such as tetrakis dimethyl amino arsenic (TDMAAs) and tetrakis dimethyl amino antimony (TDMASb) have been routinely used for in situ cleaning of III–V semiconductors from the surface oxides. − …”

Section: Discussionmentioning

confidence: 98%

Interface Between Atomic Layer Deposition Ta₂O₅ Films and GaAs(100) Surfaces

Gougousi

2012

J. Phys. Chem. C

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Ta 2 O 5 films were deposited on GaAs(100) surfaces using thermal atomic layer deposition from pentakis dimethyl amino tantalum (PDMAT) and H 2 O. The interface between the films and native oxide covered GaAs surfaces has been examined using X-ray photoelectron spectroscopy as a function of film thickness and for deposition temperatures ranging from 200 to 350°C. Gradual removal of the surface arsenic and gallium oxides was observed, with the removal of the arsenic oxides in general more efficient. The high oxidation states of both the arsenic and the gallium oxides were also found easier to remove. Elevation of the process temperature above 300°C resulted in significant enhancement of the native oxide removal rate. When films were deposited on GaAs surfaces that had the surface oxides removed, a practically sharp interface between the film and the GaAs substrate was maintained.

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Section: Discussionmentioning

confidence: 98%

Interface Between Atomic Layer Deposition Ta₂O₅ Films and GaAs(100) Surfaces

Gougousi

2012

J. Phys. Chem. C

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“…TDMAAs starts to decom- pose significantly at T = 300°C. Whitaker et al 16 also found in their MBMS studies that the onset of decomposition occured at 300°C. Also displayed on Fig.…”

Section: Modeling Resultsmentioning

confidence: 90%

“…This is because rates of reactions between thermally activated species from the substrate can be much larger at high substrate temperatures. When interpreting the As signal variation with the substrate temperature recorded in Whitaker et al's studies, 16 it is possible that we need to consider both the fragmentation pattern of TDMAAs and gasphase reactions in the QMS shield which might be important at high substrate temperatures.…”

Section: Discussionmentioning

confidence: 97%

“…In their studies of TDMAAs decomposition on a clean GaAs(100) substrate in a CBE reactor using modulated beam mass spectrometry (MBMS), Whitaker et al 16 found that the major signals were m/ e = 42, 44 and those of fragmentation products of the parent molecule. They also found a significant variation with the substrate temperature of the signal corresponding to As atoms from decomposition of TDMAAs.…”

Section: Review Of Experimental Studies On Tdmaas Decomposition On Gamentioning

confidence: 98%

“…1,[11][12][13][14][15][16] This model is being used for research on laser-assisted growth of GaAs with TEGa and TDMAAs, which will be reported elsewhere. In this report, we will first review surface science studies on TDMAAs and proceed to present arguments on the reaction scheme and assumptions on Arrhenius parameters.…”

Section: Introductionmentioning

confidence: 99%

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A kinetic model for tris(dimethylamino) arsine decomposition on GaAs(100) surfaces

Shi

1999

Journal of Elec Materi

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In this paper, we outline the detailed arguments involved in developing a kinetic model describing surface pyrolysis of tris(dimethylamino) arsine (TDMAAs) on a GaAs(100) surface. Two decomposition pathways of TDMAAs on GaAs(100) are assumed: simple scission of the arsenic and nitrogen bond and surface β-hydrogen transfer reaction. The pre-exponential factor for the scission of the parent is assumed to be the largest among the species going through the scission pathway. Removal of the last dimethylamino ligand is assumed to be essentially the rate-limiting step of the overall decomposition of TDMAAs. The reaction steps and constraints so constructed enable us to derive kinetic parameters of reasonable values from temperature-programmed desorption data in literature. Computer simulations based on the model reproduce well the behavior of data in literature of desorption products from a heated GaAs(100) surface exposed to TDMAAs inside a vacuum chamber.

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