Atomic force microscope study of three-dimensional nanostructure sidewalls

Hussain, Muhammad Mustafa; Gondran, Carolyn F. H.; Michelson, Diane K.

doi:10.1088/0957-4484/18/33/335303

Cited by 8 publications

(6 citation statements)

References 19 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…However, our study on linewidth roughness variation on silicon nanowires has been reported somewhere else. 16 Currently, we are investigating use of nonstandard etch chemistry to follow the same basics to produce same types of nanostructures. According to our knowledge, titanium nitride, tantalum nitride, tantalum, tungsten, and lanthanide doped metal nitride alloys can be etched using the described process.…”

Section: Resultsmentioning

confidence: 99%

Highly selective isotropic dry etch based nanofabrication

Hussain¹,

Gebara²,

Sassman³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

Metallic nanowires have significant importance in microelectronic circuits [N. A. Melosh et al., Science 300, 112 (2003)], memory cells, optics [X. Wu et al., Nature (London) 430, 61 (2004)], liquid crystal displays [C. Lapointe et al., Science 303, 652 (2004)], and sensors [R. C. Walter et al., Surf. Interface Anal. 34, 409 (2002)]. There are various methods for fabricating patterned nanostructures such as nanowires, but high cost, low throughput, and uniformity are still their major issues [M. Hernandez-Velez, Thin Solid Films 495, 51 (2006)]. Therefore, a simple nanofabrication technique that uses existing microfabrication tool sets and methods to fabricate nanostructures such as nanowires with accuracy and flexibility is required. Here, the authors show use of a historically well-known method [Z. Yu et al., J. Vac. Sci. Technol. B 21, 2089 (2003)] based on overetch triggered undercutting to fabricate thin film nanowires on a silicon wafer. For the first time, batch-fabricated metallic nanowire—titanium nitride (TiN)—on 200mm silicon wafers using highly selective, timed, isotropic dry etch is being reported. Use of conventional microfabrication in the author’s demonstrated technique indicates the simplicity and economy of fabricating nanowires.

show abstract

Section: Resultsmentioning

confidence: 99%

Highly selective isotropic dry etch based nanofabrication

Hussain¹,

Gebara²,

Sassman³

et al. 2007

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

Self Cite

View full text Add to dashboard Cite

show abstract

“…As mentioned earlier in this section, in some of the tilting-AFM methods [80][81][82] and dual probe AFM caliper [83] (described in sections 3.2.2 and 3.2.3, respectively), tip-sample distance is controlled through a unidirectional servo along y-or z-axis. Amplitude modulation technique (intermittentcontact) is used to detect tip-sample interaction.…”

Section: Tip-sample Interaction and Feedback Controlmentioning

confidence: 99%

“…In the third configuration of the tilting-AFM, sample is tilted at a desired angle as shown in figure 12. Scanning is performed by a vertically aligned tip with the tip-sample distance control on the z-axis [80,82,123]. This approach is fundamentally similar to the conventional AFM scanning except the sample is tilted so that the sidewalls on the line features can be accessed.…”

Section: Tilting-atomic Force Microscope (Tilting-afm)mentioning

confidence: 99%

Advances in the atomic force microscopy for critical dimension metrology

Hussain

Ahmad

Song

2016

Meas. Sci. Technol.

View full text Add to dashboard Cite

Downscaling, miniaturization and 3D staking of the micro/nano devices are burgeoning phenomena in the semiconductor industry which have posed sophisticated challenges in the critical dimension (CD) metrology. Over the past few years, atomic force microscopy (AFM) has emerged as an important CD metrology technique in meeting these challenges because of its high accuracy, 3D imaging capability, high spatial resolution and non-destructive nature. In this article, advances in the AFM based critical dimension (CD) metrology are systematically reviewed and discussed. CD metrology AFM techniques, strengths, limitations and scanning algorithms are described. Developments towards accurate measurements such as creep and hysteresis compensation of the piezoelectric scanners, their calibration and tip characterization are discussed. In addition, image reconstruction and measures for achieving high accuracy CD measurements with hybrid metrology technique are also discussed. CD metrology challenges offered by the next generation lithography (NGL) techniques such as those associated with the 3D nanodevices of 10 nm node and beyond have been highlighted.

show abstract

“…Their application is limited to specialized measurements or provide low surface resolution due to comparatively big tip radius and a complex blind estimation would be required for accurate CD measurements [24,25]. M. Fouchier et al proposed a technique by tilting the sample for sidewalls imaging [26,27]. This approach is suitable for sidewall scan with a complex calibration routine [28].…”

Section: Introductionmentioning

confidence: 99%