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2012
DOI: 10.1007/s13204-012-0166-9
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Atomic force microscope manipulation of multiwalled and single walled carbon nanotubes with reflux and ultrasonic treatments

Abstract: We are reporting the atomic force microscope (AFM) nanomanipulation of ultrasonically dispersed and reflux-oxidized multiwalled carbon nanotubes (MWCNT) and single walled carbon nanotubes (SWCNT) by controlling the AFM tip with a NanoManipulator on a silicon substrate. The structure and the morphology of the carbon nanotubes (CNT) were confirmed with AFM interfaced with NanoManipulator and transmission electron microscope. The modifying parameter, which controls the force exerted by AFM tip, was set to be 0.5 … Show more

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Cited by 14 publications
(16 citation statements)
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“…For an ideal perovskite, t ¼ 1. Most perovskites have 0:75<t<1:03 (Li et al, 2004;Kumar et al, 2008). Below this range the ABO 3 solid tends to adopt other structure types, e.g.…”
Section: Perovskite Featuresmentioning
confidence: 99%
See 3 more Smart Citations
“…For an ideal perovskite, t ¼ 1. Most perovskites have 0:75<t<1:03 (Li et al, 2004;Kumar et al, 2008). Below this range the ABO 3 solid tends to adopt other structure types, e.g.…”
Section: Perovskite Featuresmentioning
confidence: 99%
“…Our stated task is of course one that has been studied for several years (Li et al, 2004;Zhang et al, 2007;Feng et al, 2008;Kumar et al, 2008). These studies performed a classification into perovskite or not in the traditional way by using a structure map.…”
Section: Introductionmentioning
confidence: 99%
See 2 more Smart Citations
“…Atomic force microscopy (AFM) has been a widely used tool to perform various kinds of CNT manipulation. Both contact mode and non-contact mode could be used to translate, bend, roll, split or cut the nanotubes (Hyon et al 2005;Kim et al 2003;Kumar et al 2012;Postma et al 2000;Ziyong et al 2003), either by applying the tip bias (Hyon et al 2005;Kim et al 2003;Park et al 2002) or by exerting mechanical forces (Hertel et al 1998). Devices based on SWNTs were also fabricated through AFM manipulation such as single-electron transistors (Postma et al 2001), field-effect transistors (Avouris et al 1999), diodes (Jiao et al 2008), and so on.…”
Section: Introductionmentioning
confidence: 99%