2021
DOI: 10.1557/s43578-020-00054-9
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Atomic and molecular layer deposition in pursuing better batteries

Abstract: In the past decade, atomic and molecular layer deposition (ALD and MLD), these two sister techniques have been attracting more and more research attention to address technical challenges in various advanced battery systems. The charm of both ALD and MLD lies in their unique mechanism for growing a large variety of functional materials, featuring uniform and conformal films enabled at the atomic/molecular level at low temperature. Using ALD and MLD, to date, there have been many excitements achieved in research… Show more

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Cited by 25 publications
(10 citation statements)
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“…Since its introduction in the 1970s [ 58 , 59 ], ALD has now recognized as a powerful technique for surface and interface engineering in energy-related devices, as is well documented in literature [ 2 , 8 , 54 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 ]. One of the most successful and prevalent ALD processes is growing Al 2 O 3 films with the precursors of trimethylaluminum (TMA) and H 2 O.…”
Section: Mechanisms and Characteristics Of Ald And Mldmentioning
confidence: 99%
See 1 more Smart Citation
“…Since its introduction in the 1970s [ 58 , 59 ], ALD has now recognized as a powerful technique for surface and interface engineering in energy-related devices, as is well documented in literature [ 2 , 8 , 54 , 59 , 60 , 61 , 62 , 63 , 64 , 65 , 66 , 67 ]. One of the most successful and prevalent ALD processes is growing Al 2 O 3 films with the precursors of trimethylaluminum (TMA) and H 2 O.…”
Section: Mechanisms and Characteristics Of Ald And Mldmentioning
confidence: 99%
“…One of the most successful and prevalent ALD processes is growing Al 2 O 3 films with the precursors of trimethylaluminum (TMA) and H 2 O. Two half surface reactions are proceeded as follows [ 65 , 68 ]. |-OH + Al(CH 3 ) 3 ↑→|-O-Al(CH 3 ) 2 + CH 4 ↑ |-O-Al(CH 3 ) 2 + 2H 2 O↑→|-OAl(OH) 2 + 2CH 4 ↑ where “|” indicates the substrate surface, “-” indicates a chemical bond, and “↑” denotes the gas phase of the precursors (i.e., TMA and water) and the byproduct (i.e., CH 4 ).…”
Section: Mechanisms and Characteristics Of Ald And Mldmentioning
confidence: 99%
“…In recent times, atomic layer deposition (ALD) has emerged as the most favorable tool for tailoring electrode surfaces, offering a promising package of enhanced properties . ALD evolved as a step past chemical vapor deposition (CVD).…”
Section: Introductionmentioning
confidence: 99%
“…In recent times, atomic layer deposition (ALD) has emerged as the most favorable tool for tailoring electrode surfaces, offering a promising package of enhanced properties. 38 ALD evolved as a step past chemical vapor deposition (CVD). Alternating pulses of precursors isolated by intermediate purging steps in ALD lead to film growth by a self-limiting reaction occurring on the substrate surface solely, whereas CVD proceeds with both the surface and the gas reactions simultaneously.…”
Section: Introductionmentioning
confidence: 99%
“…[29] The possibility to deposit a large variety of functional materials at low deposition temperatures has made ALD an attractive technique to modify interfaces in both LIBs and other systems. [30,31] It is therefore an excellent coating technique for studying the effects of ultra-thin coatings.…”
Section: Introductionmentioning
confidence: 99%