2020
DOI: 10.1016/j.apcatb.2020.118625
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Atom vacancies induced electron-rich surface of ultrathin Bi nanosheet for efficient electrochemical CO2 reduction

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Cited by 122 publications
(51 citation statements)
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“…[23] In addition, the electron states of both the Opand Sn p, do rbitals are upshift away from the fermi level after the formation of the heterojunction of CuS@SnO 2 and Cu 2 O@SnO 2 ,w hich also indicates astrongest binding force the between HCOO* and the heterojunction surface. [24] Moreover,t he upshift electron states of Oporbitals means that the Oatom of HCOO* which absorbed in the heterojunction surface increase the antibonding states compared to that of SnO 2 . [17e,25] In other word, HCOO* absorbed in the heterojunction surface allow H* to accessibly adsorb and react with HCOO*.…”
Section: Methodsmentioning
confidence: 99%
“…[23] In addition, the electron states of both the Opand Sn p, do rbitals are upshift away from the fermi level after the formation of the heterojunction of CuS@SnO 2 and Cu 2 O@SnO 2 ,w hich also indicates astrongest binding force the between HCOO* and the heterojunction surface. [24] Moreover,t he upshift electron states of Oporbitals means that the Oatom of HCOO* which absorbed in the heterojunction surface increase the antibonding states compared to that of SnO 2 . [17e,25] In other word, HCOO* absorbed in the heterojunction surface allow H* to accessibly adsorb and react with HCOO*.…”
Section: Methodsmentioning
confidence: 99%
“…Chemie Forschungsartikel 23126 www.angewandte.de the electron states of both the Opand Sn p, do rbitals are upshift away from the fermi level after the formation of the heterojunction of CuS@SnO 2 and Cu 2 O@SnO 2 ,w hich also indicates astrongest binding force the between HCOO* and the heterojunction surface. [24] Moreover,t he upshift electron states of Oporbitals means that the Oatom of HCOO* which absorbed in the heterojunction surface increase the antibonding states compared to that of SnO 2 . [17e,25] In other word, HCOO* absorbed in the heterojunction surface allow H* to accessibly adsorb and react with HCOO*.…”
Section: Methodsmentioning
confidence: 99%
“…[11] The latter aims to adjust the adsorption of intermediates and smooth reaction pathways by regulating the electronic structure. [12] Up to date, reported researches for modifying the electronic structure have provided effective ways including introducing vacancies [13] and grain boundaries. [14] Theoretical studies reveal that introducing p-block atoms is effective on breaking linear scaling relations for the Gibbs free energy of *COOH and *OCHO which are the intermediates for CO and formate, respectively.…”
Section: Introductionmentioning
confidence: 99%