Atom beam sputtering setup for growth of metal particles in silica

Micro-structural origin of elongation in swift heavy ion irradiated Ni nanoparticles: A combined EXAFS and DFT study

“…Further details can be found in Refs. [7,11,27]. The films were subsequently annealed in Ar-H 2 gas environment at 750 C for 1 h. The annealed films (hereafter labeled as unirradiated) were subjected to 100 MeV Au þ7 SHI irradiation (with fluences 5.0 Â 10 13 ions/cm 2 , 7.5 Â 10 13 ions/cm 2 and 1.0 Â 10 14 ions/ cm 2 ) perpendicular to film-surface (to be referred as 5e13, 7.5e13 and 1e14 respectively from now on).…”

Atom beam sputtered Mo2C films as a diffusion barrier for copper metallization

“…The system design considerations which provides medium area beam of essentially atomic neutrals, suitable for sputtering from conducting, dielectric and insulating surfaces has been described in paper [22]. A 3 in.…”

“…The advantages of preparing composite films by fast ABS sputtering is that it gives uniform depth distribution of the constituent elements because of the fact that relative sputtering rate of the Mo and carbon remain constant during deposition [22]. The system provides a low cost alternative for doping impurities in a film with excellent depth distribution as compared to conventional high budget equipment like ion implanter.…”

Swift heavy ion induced modifications of optical and microstructural properties of silver–fullerene C60 nanocomposite

“…Here it is interesting to note that the formation of Ag NPs is also possible in as-deposited film of C 60 -Ag having 4.6 at. % Ag (details will be reported later) whereas thermal co-deposition of Ag and silica requires annealing for the formation of metal NPs [14][15][16]. This is attributed to the high diffusivity of Ag in fullerene C 60 as compared to that of Ag in silica.…”