Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

Frijters, Corné; Poodt, Paul; Illiberi, A.

doi:10.1016/j.solmat.2016.06.016

Cited by 21 publications

(12 citation statements)

References 23 publications

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“…There are a few reports of mixed‐anion SALD fabrications as well, for the fabrication of p‐type Zn(O,N) [ 93–95 ] and the Zn(O,S) buffer layers for Cu(In,Ga)Se 2 solar cells. [ 96,97 ]…”

Section: Fabrication Process Strategies and Precursorsmentioning

confidence: 99%

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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For decades the most successful approach towards new inorganic material innovations for next‐generation devices has been to manipulate the cation composition. As this cation‐centric material development is inevitably approaching its saturation, new chemistries are needed to maintain the pace of technological progress. One of the new chemistry approaches is to play with the anions instead of the cations. Moreover, advances in fabrication techniques are needed to address the endeavors to shrink the device and component dimensions. Here, the combination of mixed‐anion chemistries, such as oxychalcogenides or carbopnictides, and the state‐of‐the‐art atomic layer deposition (ALD) thin‐film technology are highlighted. The unique bottom‐up material building mode of ALD can lead to scientifically exciting but at the same time industry‐feasible material innovations. In this brief review, the present status and prospects, and the challenges of this emerging field are discussed.

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Section: Fabrication Process Strategies and Precursorsmentioning

confidence: 99%

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Tripathi

Karppinen

2021

Adv Materials Inter

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“…Intrinsic metal oxides HfO 2 [11] Al 2 O 3 [14-16, 19-21, 26, 31, 35-50] ZnO [18,36,39,45,46,[51][52][53][54][55][56][57][58][59][60][61][62][63][64][65][66][67] SnO x [68,69] TiO 2 [14,18,[70][71][72] Cu 2 O [46,73,74] Nb 2 O 5 [71] NiO x [91] ZrO 2 [92,93] MoO x [94] Doped SALD has also been used for LEDs, in some cases to deposit active ZnO layers for polymer and hybrid perovskite-based diodes [54,76], and in another case using Al 2 O 3 as permeation barrier for flexible organic LEDs [49]. Other authors have also demonstrated the suitability of SALD for depositing barrier and encapsulation layers both on plastic and paper substrates [14,31,40,48].…”

Section: Materials Referencesmentioning

confidence: 99%

Spatial Atomic Layer Deposition

Muñoz‐Rojas¹,

Nguyễn²,

Huerta³

et al. 2019

Chemical Vapor Deposition for Nanotechnology

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In conventional atomic layer deposition (ALD), precursors are exposed sequentially to a substrate through short pulses while kept physically separated by intermediate purge steps. Spatial ALD (SALD) is a variation of ALD in which precursors are continuously supplied in different locations and kept apart by an inert gas region or zone. Film growth is achieved by exposing the substrate to the locations containing the different precursors. Because the purge step is eliminated, the process becomes faster, being indeed compatible with fast-throughput techniques such as roll-to-roll (R2R), and much more versatile and easier and cheap to scale up. In addition, one of the main assets of SALD is that it can be performed at ambient pressure and even in the open air (i.e., without using any deposition chamber at all), while not compromising the deposition rate. In the present chapter, the fundamentals of SALD and its historical development are presented. Then, a succinct description of the different engineering approaches to SALD developed to date is provided. This is followed by the description of the particular fluid dynamics aspects and the engineering challenges associated with SALD. Finally, some of the applications in which the unique assets of SALD can be exploited are described.

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“…Device grade ZnOS has been recently synthesized by S-ALD by co-injecting vaporized H 2 O and H 2 S. 17 New insights on the growth mechanism and the properties of ZnOS are given in the first part of this paper. Later, the device characteristics of rigid and flexible CIGS with S-ALD ZnOS buffer layer will be described.…”

Section: A Layer Deposition and Characterizationmentioning

confidence: 99%

Atmospheric spatial atomic layer deposition of ZnOS buffer layers for flexible Cu(In,Ga)Se2 solar cells

Illiberi

Frijters

Ruth

et al. 2018

Journal of Vacuum Science &Amp; Technology A: Vacuum, Surfaces, and Films

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Zinc oxysulfide (ZnOS) is synthesized at atmospheric pressure in a laboratory-scale spatial atomic layer deposition setup by sequentially exposing the substrate to diethyl zinc and an H2O/H2S mixture, separated by a nitrogen gas curtain. The co-injection of H2O and H2S vapors in the same deposition zone enables an accurate control of the S/(O + S) ratio, the morphology, and the optoelectronic properties of the films. Next, the ZnOS deposition process is transferred to an industrial roll-to-roll spatial-ALD setup. ZnOS is applied as a buffer layer in flexible Cu(In,Ga)Se2 solar cells, instead of the commonly used CdS, achieving a best efficiency of typically 13% in small area cells (0.57 cm2) and 9.2% in flexible mini-modules (270 cm2). These results show the viability of atmospheric spatial-ALD as a new technique for roll-to-roll manufacturing of flexible photovoltaics modules based on a Cu(In,Ga)Se2 absorber.

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Atmospheric spatial atomic layer deposition of Zn(O,S) buffer layer for Cu(In,Ga)Se2 solar cells

Cited by 21 publications

References 23 publications

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Mixed‐Anion Compounds: An Unexplored Playground for ALD Fabrication

Spatial Atomic Layer Deposition

Atmospheric spatial atomic layer deposition of ZnOS buffer layers for flexible Cu(In,Ga)Se2 solar cells

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