Atmospheric rf plasma deposition of superhydrophobic coatings using tetramethylsilane precursor

Marchand, David J.; Dilworth, Zachary R.; Stauffer, Robert J.; Hsiao, Erik; Kim, Jeong Hoon; Kang, J.G.; Kim, Seong H.

doi:10.1016/j.surfcoat.2013.03.029

Cited by 48 publications

(20 citation statements)

References 40 publications

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“…The results for the number densities of radicals and charge carriers obtained by numerical modeling (Figs. 8 and 10) suggest that radicals are the predominant species for the film formation in plasma polymerization at atmospheric pressure [24]. Corresponding argumentations are also given when discussing the deposition of thin films using atmospheric-pressure DBDs with admixture of the monomers HMDSO or tetraethoxysilane (TEOS) [13,33,35,[207][208][209][210].…”

Section: Temporal Behavior Of Dbds In Ar-tms Mixturesmentioning

confidence: 94%

“…Atmospheric-pressure plasma polymerization of TMS has recently been performed using different discharge configurations. A radio-frequency glow-discharge system was applied in [24] to generate organic-inorganic hybrid coatings in a plasma generated with a TMS precursor concentration of 0.01−0.04 vol% in He carrier gas. An atmospheric-pressure plasma jet in He with a few vol.…”

Section: Introductionmentioning

confidence: 99%

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Modeling of Atmospheric-Pressure Dielectric Barrier Discharges in Argon with Small Admixtures of Tetramethylsilane

Loffhagen

Becker

Czerny

et al. 2020

Plasma Chem Plasma Process

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A time-dependent, spatially one-dimensional fluid-Poisson model is applied to analyze the impact of small amounts of tetramethylsilane (TMS) as precursor on the discharge characteristics of an atmospheric-pressure dielectric barrier discharge (DBD) in argon. Based on an established reaction kinetics for argon, it includes a plasma chemistry for TMS, which is validated by measurements of the ignition voltage at the frequency $$f =86.2\, {\hbox{kHz}}$$ f = 86.2 kHz for TMS amounts of up to 200 ppm. Details of both a reduced Ar-TMS reaction kinetics scheme and an extended plasma-chemistry model involving about 60 species and 580 reactions related to TMS are given. It is found that good agreement between measured and calculated data can be obtained, when assuming that 25% of the reactions of TMS with excited argon atoms with a rate coefficient of $$3.0 \times 10^{-16}\, {\hbox{m}^3/\hbox{s}}$$ 3.0 × 10 - 16 m 3 / s lead to the production of electrons due to Penning ionization. Modeling results for an applied voltage $${U}_{{\mathrm{a}},0} = 4\, {\hbox{kV}}$$ U a , 0 = 4 kV show that TMS is depleted during the residence time of the plasma in the DBD, where the percentage consumption of TMS decreases with increasing TMS fraction because only a finite number of excited argon species is available to dissociate and/or ionize the precursor via energy transfer. Main species resulting from that TMS depletion are presented and discussed. In particular, the analysis clearly indicates that trimethylsilyl cations can be considered to be mainly responsible for the film formation.

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Section: Temporal Behavior Of Dbds In Ar-tms Mixturesmentioning

confidence: 94%

Section: Introductionmentioning

confidence: 99%

Modeling of Atmospheric-Pressure Dielectric Barrier Discharges in Argon with Small Admixtures of Tetramethylsilane

Loffhagen

Becker

Czerny

et al. 2020

Plasma Chem Plasma Process

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“…Plasma‐enhanced chemical vapor deposition (PECVD) of thin, functional films has become an important process in many industries spanning electronics, aerospace, consumer goods, medicine and life sciences, and more. PECVD of organosilicon thin films, in particular, is used for dielectric thin films, adhesion promotion, barrier coatings, corrosion protection, tailoring surface energy, and abrasion resistance of polymers . For example, deposition of a thin organosilicon film onto coated polycarbonate provides a light weight replacement for glass in automotive windows .…”

Section: Introductionmentioning

confidence: 99%

Characterization of the deposition behavior and changes in bonding structures of hexamethyldisiloxane and decamethylcyclopentasiloxane atmospheric plasma‐deposited films*

Gilliam

Farhat

Garner

et al. 2019

Plasma Processes & Polymers

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The plasma deposition behavior of hexamethyldisiloxane (HMDSO) and decamethylcyclopentasiloxane (D5) is investigated for an atmospheric pressure plasma jet. The energy-deficient and monomer-deficient domains are revealed by normalized parameters and no significant difference between HMDSO and D5 is observed. The results are supported by Fourier-transform infrared spectroscopy (FTIR) and X-ray photoelectron spectroscopy. The data is also evaluated using an Arrhenius-type equation and an empirical equation reported in the literature, but the correlation is not as good as the normalized parameters. Changes in Si-O-Si bonding arrangements are analyzed by deconvolution of the FTIR absorbance band, showing an increase in porous cage structures with higher normalized energy input. monomer-deficient domain porous cage structures of Si-O-Si bonding network structures of Si-O-Si bonding e n e rg y -d e fi c ie n t d o m a in GR/FM W/FM K E Y W O R D S deposition characterization, infrared spectroscopy, organosilicon precursors, plasma polymerization, plasma-enhanced chemical vapor deposition Plasma Process Polym. 2019;16:e1900024 www.plasma-polymers.com

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“…Besides chemical composition, morphology is an important factor in determining the wettability of a solid surface. Superhydrophobicity (WCA ≥ 150°) requires a surface that is both hydrophobic and rough at the sub-microscale, often obtained by atmospheric RF, high-density plasma, which allows solid particulates to form in the gas phase [ 14 , 17 ]. By partially removing the coating using a razor blade, the coating thickness was estimated to be 0.32 μm.…”

Section: Resultsmentioning

confidence: 99%

“…Various precursors from hydrocarbons to organosilicons have been tested for NTP assisted fabrication of hydrophobic thin films. The static water contact angle (WCA) of above 150° (referred as super-hydrophobicity) for the thin films coated on the flat glass or silicon substrates using benzene/helium, benzene/argon, tetramethylsilane/helium and toluene-hexamethyldisiloxane/argon plasmas were previously reported [ 14 , 15 , 16 , 17 ]. The glass hydrophilic treatment is, however, crucial for many subsequent operations of glass processing, for example, gluing, printing, coating, etc .…”

Section: Introductionmentioning

confidence: 99%

Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

Trinh

Hossain

Kim

et al. 2018

Heliyon

Self Cite

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A double dielectric barrier discharge reactor operated at a low power frequency of 400 Hz and atmospheric pressure was utilized for regulating the wettability of glass surface. The hydrophobic treatment was performed by plasma polymerization of tetramethylsilane (TMS, in argon gas). The obtained results showed that the TMS coatings formed on the glass substrates without oxygen addition were smooth, uniform films with the maximum water contact angle (WCA) of about 106°, which were similar to those obtained by low pressure, high power frequency plasmas reported in the literature. The addition of oxygen into TMS/Ar plasma gas decreased the WCA and induced the formation of SiOSi and/or SiOC linkages, which dominated the existence of Si(CH2)nSi network formed in TMS/Ar (without oxygen) plasma.

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Atmospheric rf plasma deposition of superhydrophobic coatings using tetramethylsilane precursor

Cited by 48 publications

References 40 publications

Modeling of Atmospheric-Pressure Dielectric Barrier Discharges in Argon with Small Admixtures of Tetramethylsilane

Modeling of Atmospheric-Pressure Dielectric Barrier Discharges in Argon with Small Admixtures of Tetramethylsilane

Characterization of the deposition behavior and changes in bonding structures of hexamethyldisiloxane and decamethylcyclopentasiloxane atmospheric plasma‐deposited films*

Tailoring the wettability of glass using a double-dielectric barrier discharge reactor

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