Atmospheric Pressure Glow Discharge CVD of Al₂O₃ Thin Films

Abstract

We report for the first time deposition of aluminium oxide thin films by APGD, plasma-enhanced CVD. This approach allows deposition at substantially lower substrate temperatures than normally used in atmospheric pressure based processing. The films are analysed by SEM, XPS, RBS, XRD, and optical properties. It is demonstrated that the APGD approach yields films which are essentially smooth, conformal and free from pinholes or other imperfections.SEM image of alumina film on glass (film G).

Atmospheric‐Pressure Glow Discharge CVD of Composite Metallic Aluminium Thin Films

“…Previous AP Plasma CVD work in our labs involving the deposition of non conductive oxide materials,23 demonstrated exceptional uniformity compared to an equivalent thermal reactor of similar dimensions. This could be attributed to the diffuse, homogenous nature of the discharge throughout the reaction zone and to the reduced influence of substrate temperature over the operating range.…”

“…The use of helium has been found to facilitate this condition due to the relatively long lifetime of its meta‐stable excited state,5, 18 although other gases such as argon and nitrogen can be employed 15, 19. Direct plasma parallel plate systems operating at atmospheric pressure have previously been demonstrated for the low temperature deposition of polymers,20 in addition to thin films including silica,15, 19, 21 titania,22 and more recently aluminium oxide 23. Torch configuration systems have also been applied for the deposition of materials such as In x O y , SnO x 24.…”

Atmospheric pressure chemical vapor deposition mechanism of Al2O3 film from AlCl3 and O2

“…Using this method, Choi et al [6] obtained crystalline a-alumina films at 1000 1C. Other precursors have also been employed in the fabrication of alumina films and powders such as aluminum tri-isopropoxide [9] which yields crystalline g-Al 2 O 3 at 800 1C and a-Al 2 O 3 above 1000 1C, or aluminum alkyls such as (CH) 3 Al or (C 2 H 5 ) 3 Al which could deposit alumina at lower temperatures ranging from 250 to 500 1C [5,10,11]. These precursors, however, are more costly and quite difficult to handle compared to AlCl 3 .…”

High‐Rate Deposition of Electrochromic Organotungsten Oxide Thin Films for Flexible Electrochromic Devices by Atmospheric Pressure Plasma Jet: The Effect of Substrate Distance

“…Recently, the interest in atmospheric pressure‐plasma enhanced chemical vapor deposition (AP‐PECVD) using ‘atmospheric‐pressure non‐equilibrium discharges’ is growing due to the economical (low cost, high processing speed and simple system which does not use vacuum equipment) and ecological advantages 4. AP‐PECVD has been used to deposit thin films such as SiO x ,5 SiN x ,6 TiO x ,7 Al,8 AlO x ,9 ZnO x ,10 SnO x ,11 InO x ,12 diamond‐like coating,13 fluorocarbons14 and hydrocarbons 15. Atmospheric‐pressure non‐equilibrium discharges include corona, spark, dielectric barrier and atmospheric‐pressure glow discharge.…”