Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

Deelen, J. van; Illiberi, A.; Kniknie, B.; Beckers, E.H.A.; Simons, P.J.P.M.; Lankhorst, Adriaan

doi:10.1016/j.tsf.2013.08.009

Cited by 12 publications

(6 citation statements)

References 32 publications

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“…The back contact of thin film solar cells is usually a metal, which has a much lower sheet resistance and no trade‐off in transparency and is not considered as a bottleneck. As a consequence, much research has been devoted to improving the material quality of this front contact and its deposition process . However, it was shown that the combination of a metallic grid and a TCO can result in a much higher conductivity, with only a small sacrifice in transmittance .…”

Section: Introductionmentioning

confidence: 99%

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Deelen¹,

Barink²,

Klerk³

et al. 2014

Progress in Photovoltaics

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For thin film solar cells, there is a large gap between the record efficiencies and panel power output. It was found that for a “typical industrial” CIGS cell efficiency of 15.5%, the efficiency drops to 11.7% when it is operating under the circumstances of a monolithically integrated solar panel. Part of this gap is due to limited conductivity and transmittance of the front contact. By application of a metallic grid, the conductivity can be improved by over two order of magnitude at a transmittance loss of only a few percent as was shown experimentally. In addition, modeling was used to quantify the impact of such approach on the power output of monolithically integrated solar panels. This model includes optical and resistive losses, as well as related losses caused by the inhomogeneity of the operating voltage over the surface. Both power output and the different types of losses are mapped out for various cell configurations. Optimization of transparent conductive oxide resistance, cell length, finger width, and finger spacing of grids was performed and led to an efficiency improvement from 11.7% to 13.8% when the front contact is upgraded with a metallic grid consisting of 20 µm wide parallel fingers positioned perpendicular to the interconnect. Further optimization for a wide variety of cell and grid configurations show that for a technically more feasible size of 100 µm wide fingers, the calculated efficiency is still 13.5%. Finally, the power output is mapped out for a large number of configurations as to create an overview and insight in the interdependencies of cell configuration and finger dimensions. Copyright © 2014 John Wiley & Sons, Ltd.

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Section: Introductionmentioning

confidence: 99%

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Deelen¹,

Barink²,

Klerk³

et al. 2014

Progress in Photovoltaics

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show abstract

“…Generally, the important parameters to evaluate the quality of MOCVD epitaxial growth technology are: the crystal growth rate, uniform components, doping concentration and thickness on the crystal surface, the crystal interface roughness, and the utilization rate of each source material. 25 Therefore, it is necessary to clearly understand the flow state of the reactants in the reactor. The temperature field and flow field distribution are the main factors to effective control the mass and heat transfer effect.…”

Section: Resultsmentioning

confidence: 99%

Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth

An,

Dai,

Liu

et al. 2023

Preprint

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Commercially, metal organic chemical vapor deposition (MOCVD) is a typical and effective approach to the AlGaN film growth. It is believed that high temperature growth condition is favorable for improving efficiency and crystallization quality for the film. However, problems such as low growth rate and poor crystallization quality are common in the growing process. Considering the process conditions, such as operating pressure, gas flow rate and rotation speed, and to ensure the uniformity of growth rate and substrate thickness, a new high-temperature reactor is proposed in this paper. The process parameters were optimized by CFD simulation and the finite element analysis was conducted on the temperature field, pressure field, velocity field, density field and other physical fields. These conditions make the flow field in the reactor stable and ensure the thickness uniformity of the deposited films. These research not only provide an effective solution for high quality MOCVD AlGaN growth, but also provide a theoretical basis for experiments and equipment improvement that follows.

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“…The process of chemical vapor deposition is divided into the following steps: (1) the diffusion of reactive gas flow to the substrate surface, (2) the adsorption of the reactive gas flow to the substrate surface, (3) the formation of film by chemical reaction on the substrate surface, and (4) the desorption of gaseous byproducts from the substrate surface (Figure 10). 87 Compared to physical vapor deposition, chemical vapor deposition provides excellent coating performance and is suitable for coating complex surface and internal pores. It allows for simple control of the composition and properties of synthetic coatings and thus is cost-effective and suitable for large scale of production.…”

Section: Traditional Preparation Methods 311 Physicalmentioning

confidence: 99%

Mechanism and Evaluation of Hydrogen Permeation Barriers: A Critical Review

Li,

Barzagli,

Liu

et al. 2023

Ind. Eng. Chem. Res.

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Atmospheric pressure chemical vapor deposition of ZnO: Process modeling and experiments

Cited by 12 publications

References 32 publications

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Efficiency loss prevention in monolithically integrated thin film solar cells by improved front contact

Process parameters simulation and analysis of a new reactor for high temperature MOCVD AlGaN growth

Mechanism and Evaluation of Hydrogen Permeation Barriers: A Critical Review

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