Atmospheric pressure chemical vapor deposition of electrochromic tungsten oxide films

Plasma-enhanced atomic layer deposition of tungsten oxide thin films using (tBuN)2(Me2N)2W and O2 plasma

“…WO3 has been previously deposited using a wide range of deposition techniques including evaporation, 17,18 sputtering, 19,20 sol-gel deposition, 21,22 chemical vapour deposition (CVD), 23,24 and atomic layer deposition (ALD). 16,[25][26][27][28][29][30][31] Growth of thin films via ALD has gained increasing popularity over the last few decades because of its ability to deposit ultra-thin uniform films with precise thickness control and its low temperature growth possibility.…”

On the relative stability of cobalt‐ and nickel‐based amidinate complexes against β‐migration

“…However, with increasingly reduced feature size of semiconductor devices, atomic layer deposition (ALD) method is on its way to become the preferred technology for metal deposition due to its potential capability to develop uniform and conformal metal films 9–13. Unlike chemical vapor deposition technology 14, an ALD process involves well‐controlled cycles that allow precursors to be reacted only onto the surface of a substrate and subsequently form thin films with liberation of the resulting ligands. It has been shown that ALD process in general provides good control of stereochemistry, uniform thickness over a large area and good step coverage for high aspect ratio substrates 9, 15–17.…”

Low-cost fabrication of WO3 films using a room temperature and low-vacuum air-spray based deposition system for inorganic electrochromic device applications

“…Nevertheless, the deposition of WO 3 thin films remains expensive. Techniques used to deposit WO 3 films depend on applications, and are chemical vapor deposition (CVD) [15], radio frequency (RF) sputtering [16], cathodic electrodeposition [17], the sol-gel process [18], and spray pyrolysis [19]. CVD consumes large quantities of energy, due to the high temperatures involved; it also requires sophisticated condition management and post-processing treatments.…”