Athermal and High-Q Hybrid TiO2–Si3N4 Ring Resonator via an Etching-Free Fabrication Technique

Qiu, Feng; Spring, Andrew M.; Yokoyama, Shiyoshi

doi:10.1021/ph500450n

Cited by 41 publications

(39 citation statements)

References 26 publications

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“…By combining TiO 2 with a material with a positive thermo-optic coefficient, athermal waveguides can be designed. Athermal waveguides have been demonstrated by combining TiO 2 with Si 3 N 4 [18,19] and silicon [17]. Such athermal behavior was demonstrated over a wavelength range of up to 300 nm [20].…”

Section: Introductionmentioning

confidence: 99%

Development of low-loss TiO₂ waveguides

Hegeman¹,

Dijkstra²,

Segerink³

et al. 2020

Opt. Express

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TiO 2 channel waveguides were fabricated using a DC sputter deposition process, followed by photolithography and reactive ion etching. A SiO 2 cladding was deposited using evaporation. SEM, TEM and Raman measurements indicate the presence of both an amorphous and a crystalline phase. As the layer thickness increases, poly-crystalline structures start forming. Loss measurements were performed by imaging the scattered light from the top of the channel waveguides and fitting an exponential decay to the intensity profile. Propagation losses of 7.8 ± 0.52 dB/cm at a wavelength of 632.8 nm and 0.68 ± 0.46 dB/cm at a wavelength of 1010 nm were experimentally characterized.

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Section: Introductionmentioning

confidence: 99%

Development of low-loss TiO₂ waveguides

Hegeman¹,

Dijkstra²,

Segerink³

et al. 2020

Opt. Express

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“…TiO 2 exhibits a high non-linear refractive index, resulting in the demonstration of third harmonic generation [8], supercontinuum generation [9], spectral broadening [10] and four-wave mixing [11]. The negative thermo-optic coefficient [12] allows for the realization of athermal devices [13], by combining TiO 2 with, for example, Si 3 N 4 [14,15] or silicon [16,17]. The high refractive index has allowed the demonstration of high efficiency in waveguide enhanced Raman spectroscopy [18,19].…”

Section: Introductionmentioning

confidence: 99%

Low loss TiO2 channel waveguides

Hegeman

Dijkstra

García-Blanco

2020

Integrated Optics: Devices, Materials, and Technologies XXIV

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TiO 2 is gaining interest as material for integrated photonics, due to its high refractive index, large transparency window and high non-linear refractive index. Its low phonon energy makes it attractive for the realization of active devices in the visible frequency range. In this work, we optimize different process steps of the fabrication of low loss TiO 2 channel waveguides. The TiO 2 layers are deposited by DC sputter deposition, using a mixed Ar/O 2 plasma. Removing the hysteresis in the deposition process, results in reduced propagation losses of the TiO 2 films (estimated less than 1.5 dB/cm at 632 nm wavelength). An E-beam lithography process is utilized to reduce the sidewall roughness of the waveguides. Different reactive gasses are compared to optimize the reactive ion etching recipe. BCl 3 in combination with HBr shows to be most beneficial for etching TiO 2 with high selectivity towards negative E-beam resist. A selectivity of 2.7 for TiO 2 over the E-beam resist is obtained. The performance of a TiO 2 a channel waveguide fabricated with the process before and after optimization is compared. The waveguide fabricated using the non-optimized process exhibited losses of 7.82±0.52 dB/cm at a wavelength of 632.8 nm, after applying an SiO 2 cladding. After process optimization, 5.08±0.65 dB/cm were obtained, without an SiO 2 cladding.

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“…TiO 2 is a promising material thanks to a transparency window spanning from the visible to the mid-infrared wavelengths [23], high linear and nonlinear refractive indices (of >2.3 and 30 times, respectively, larger than silica [24,25]) and a wide bandgap (3.4 eV) allowing a negligible TPA beyond 800 nm. Its thermo-optic properties can also be of great interest for thermal stability [26][27][28]. Moreover, thin films can be prepared by several techniques such as e-beam evaporation, atomic layer deposition (ALD), plasma-enhanced chemical vapour deposition (PE-CVD) or sol-gel process [29].…”

Section: Introductionmentioning

confidence: 99%