at]Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Slobodyan, Oleksiy; Smith, Trevor; Flicker, Jack; Sandoval, S.; Matthews, Christopher M.; Heukelom, Michael Van; Kaplar, Robert; Atcitty, Stanley

doi:10.1557/mrc.2018.204

Cited by 4 publications

(2 citation statements)

References 15 publications

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“…In addition, termination technologies of the device can also improve the breakdown voltage of power P-i-N diodes [25,26]. Furthermore, the switching performance and breakdown ruggedness [18,27,28] have been studied to ensure the applicability of GaN-based P-i-N diodes for high-frequency switching applications. One potential drawback of GaN P-i-N diodes could be their relatively large forward voltage, typically over 3 V, leading to a nonnegligible conduction loss.…”

Section: Introductionmentioning

confidence: 99%

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

2019

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Device characteristics of GaN merged P-i-N Schottky (MPS) diodes were evaluated and studied via two-dimensional technology computer-aided design (TCAD) after calibrating model parameters and critical electrical fields with experimental proven results. The device’s physical dimensions and drift layer concentration were varied to study their influence on the device’s performance. Extending the inter-p-GaN region distance or the Schottky contact portion could enhance the forward conduction capability; however, this leads to compromised electrical field screening effects from neighboring PN junctions, as well as reduced breakdown voltage. By reducing the drift layer background concentration, a higher breakdown voltage was expected for MPSs, as a larger portion of the drift layer itself could be depleted for sustaining vertical reverse voltage. However, lowering the drift layer concentration would also result in a reduction in forward conduction capability. The method and results of this study provide a guideline for designing MPS diodes with target blocking voltage and forward conduction at a low bias.

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Section: Introductionmentioning

confidence: 99%

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

2019

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“…Among the candidates for fabricating power devices, GaN‐based III‐nitride semiconductors have unique and excellent material properties such as wide band gap, high saturation velocity for carriers, and excellent thermal conductivity . Besides HEMT and Schottky barrier diodes, GaN‐based PIN diodes have also received significant attention due to the low conduction loss, extremely fast switching speed, integration flexibility, and excellent high‐temperature stability . One of the major missions is to increase the breakdown voltage for GaN‐based PIN diodes, and for that purpose, different design proposals have been suggested.…”

Section: Introductionmentioning

confidence: 99%

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Hou

Chen

Jia

et al. 2019

Physica Status Solidi (a)

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This study proposes to increase the breakdown voltage for GaN‐based PIN diodes using the polarization effect, such that a thin AlGaN layer is inserted into the drift layer to modulate the electric field profiles, and by properly designing the device architecture, the electric field in the drift layer can be remarkably reduced by the polarization effect, and this enables the enhancement of the breakdown voltage. The study further investigates the parametric sensitivity of the breakdown voltage for the proposed GaN‐based PIN diodes to different device structures with various drift layer thicknesses. Moreover, it is found that the position of the inserted AlGaN thin layer is also important in affecting the breakdown voltage, such that the AlGaN insertion layer reduces the electric field with the maximum intensity in the drift layer.

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Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

Meneghini

Fabris

Ruzzarin

et al. 2020

Physica Status Solidi (a)

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This article reviews most recent results on the reliability of vertical GaN‐based devices, by presenting a few case studies focused on the stability and degradation of high‐voltage GaN‐on‐GaN diodes and of GaN‐based field‐effect transistors (FETs). With regard to diodes, two relevant stress conditions are investigated. The first is operation at high forward current that can induce a degradation of the electrical properties of the devices, mostly consisting in an increase in the operating voltage, well correlated to a decrease in the electroluminescence signal emitted by the diodes. This degradation process is ascribed to the diffusion of hydrogen from the highly p‐type doped regions toward the junction, with consequent compensation of the acceptor (Mg) dopant. The second stress regime investigated on diodes is avalanche: specifically, it is shown that polarization‐doped GaN devices may show avalanche capability, and the stability of diodes in avalanche regime is investigated in detail. With regard to transistors, the analysis is focused on GaN‐on‐GaN vertical Fin‐FETs. First, the stability of the threshold voltage under positive gate stress is analyzed, and the role of interface/oxide traps is discussed by experimental characterization. Then, the degradation under positive gate or high‐drain stress is investigated, to provide information on the dominant degradation processes.

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at]Hard-switching reliability studies of 1200 V vertical GaN PiN diodes

Abstract: Abstract

Cited by 4 publications

References 15 publications

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Device Design Assessment of GaN Merged P-i-N Schottky Diodes

Polarization Engineering to Manipulate the Breakdown Voltage for GaN‐Based PIN Diodes

Degradation Mechanisms of GaN‐Based Vertical Devices: A Review

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