Asymmetric planar doped barrier diodes for mixer and detector applications

Kearney, M. J.; Kelly, M. J.; Davies, R A; Kerr, T. M.; Rees, P.; Condie, A.; Dale, I.

doi:10.1049/el:19890971

Cited by 26 publications

(6 citation statements)

References 1 publication

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“…A voltage sensitivity comparison between our devices and the currently available zero-bias diodes in the market is shown in table 4. The calculations of the voltage sensitivity of these devices are based on (20). At 10 GHz, pHSD200 produces the highest voltage sensitivity of 107 mV μW −1 followed by pHSD120 with 89 mV μW −1 .…”

Section: Comparison Between Modelling and Measurementmentioning

confidence: 99%

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Haris

Kyabaggu

Rezazadeh

2016

Semicond. Sci. Technol.

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A microwave receiver protection limiter circuit has been designed, fabricated and tested using vertically stacked GaAs MMIC technology. The limiter circuit with a dimension of 2.5 × 1.3 mm 2 is formed by using double-channel AlGaAs/InGaAs pseudomorphic HEMT (pHEMT) Schottky diodes integrated with a low-loss V-shaped coplanar waveguide multilayer structure. The electrical parameter characteristics of the pHEMT Schottky diodes are presented including the C-V profile showing the presence of a double channel in the device layer structure. This unique feature can also be seen from the double-peak responses of the electron density as a function of the device layer width, which represent the high electron concentration at two different 2-DEG layers of the structure. An equivalent circuit model of pHEMT Schottky diodes is demonstrated showing good agreement with the measurement results. At zero-bias condition, the devices show high performance in diode detector applications with voltage sensitivities of more than 89 mV μW −1 at 10 GHz and at least 5.4 mV μW −1 at 35 GHz. The measurement results of the limiter circuit demonstrated the blocking of input power signals greater than 20 dBm input power at 3 GHz. To the best of our knowledge this is the first demonstration of the use of pHEMT Schottky diodes in microwave power limiter applications.

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Section: Comparison Between Modelling and Measurementmentioning

confidence: 99%

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Haris

Kyabaggu

Rezazadeh

2016

Semicond. Sci. Technol.

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“…The current versus voltage characteristic of an asymmetric PDB is similar to a Schottky-barrier characteristic. The PDB can be used as a Schottky-barrier replacement with the additional advantage of barrier height control [10,11]. At 94 GHz a PDB single-ended mixer had a noise figure of approximately 6 dB and required only 280 pW of local oscillator power.…”

Section: Planar Doped Barrier Devicesmentioning

confidence: 99%

Planar doped barrier devices for subharmonic mixers

Lee

East

Haddad

1991

Micro & Optical Tech Letters

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Mixers are a critical component of most millimeter‐wave and terahertz systems. Often, the front‐end mixer performance determines the overall system performance. At higher millimeter‐wave and terahertz frequencies, mixer performance can be limited by the lack of low‐cost solid‐state sources. A subharmonic mixer with a pumping frequency at half the signal frequency would reduce the source power requirements at these higher frequencies. Typical subharmonic mixers use back‐to‐back Schottky barrier diodes. The resulting structures are difficult to fabricate. The performance can be degraded by unmatched diodes or by parasitics associated with the various connections. One possible solution is to use an integrated Schottky barrier structure. Another possible solution is to use a planar doped barrier (PDB) as a single‐device subharmonic mixer. This article presents an analysis of PDB subharmonic mixer performance.

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“…One can cite as examples the high electron mobility transistor (Hiyamizu 1990, Wang et al 1992, the quantum well laser (Tsang 1990, IEEE 1991, the hot electron Gunn diode , the planar-doped-barrier detector ( (Kearney et al 1989, Kearney andDale 1990), and the quantum well long-wavelength infrared detector (Levine et a/. 1989, Andrews andMiller 1991).…”

Section: Introductionmentioning

confidence: 99%

Invited paper. The poor prospects for one-dimensional devices

Kelly

1993

International Journal of Electronics

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Semiconductor heterojunctions heralded the intense and interesting physics study of quasi-two-dimensional electronic and optical phenomena. A subset of this physics has been exploited in practical devices. While the physics of corresponding quasi-one-dimensional phenomena is proving of arguably even greater interest, the prospects to date for practical devices emerging appear all but negligible. Instead we see a potentially promising future in the exploitation of materials, fully engineered in all three dimensions with nanometre-scale precision, as improved host materials for otherwise conventional devices.

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Asymmetric planar doped barrier diodes for mixer and detector applications

Cited by 26 publications

References 1 publication

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Design and characterisations of double-channel GaAs pHEMT Schottky diodes based on vertically stacked MMICs for a receiver protection limiter

Planar doped barrier devices for subharmonic mixers

Invited paper. The poor prospects for one-dimensional devices

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