Invited paper. The poor prospects for one-dimensional devices

Abstract

Semiconductor heterojunctions heralded the intense and interesting physics study of quasi-two-dimensional electronic and optical phenomena. A subset of this physics has been exploited in practical devices. While the physics of corresponding quasi-one-dimensional phenomena is proving of arguably even greater interest, the prospects to date for practical devices emerging appear all but negligible. Instead we see a potentially promising future in the exploitation of materials, fully engineered in all three dimensions with nanometre-scale precision, as improved host materials for otherwise conventional devices.

Structure and Electronic Properties of Potassium-Loaded Zeolite L

“…In this regard, Kelly , has highlighted the poor prospects for practical quasi-one-dimensional electronic devices emerging from existing fabrication technologies, and identified metal loaded zeolites and related materials as offering one of the most promising routes toward this goal in the medium to long term. Zeolite L, with unit cell formula K 9 Al 9 Si 27 O 72 (hereafter K 9 -L), is an example of a potential host system, which contains 12-ring channels parallel to the c direction.…”

The effect of cross section on the electron states in quantum wire lasers

“…For practical applications, there is always concern about the absolute efficiency, even if the differential efficiency is higher. To date, quantum wire lasers represent a relatively inefficient use of the active volume compared with a quantum well laser, and unless multiple layers of multiple quantum wires axe used, each giving the same optical energy (this being a demanding if not impossible task), the low absolute powers may make the devices unattractive, a problem already encountered in quasi-0r.e-dimensional electronic devices [7].…”

“…For a valid solution for the semi-ellipse, with the wavefunctions vanishing at q = 0, x, only odd solutions of the angular Instead ofsolving the equation Jo,,+,(s, Eo) = 0, we have found it easier to find and plot s(<,) that satisfies the zero condition for Jo. Given the relation between E and To and between s and the eigenenergy E, namely E = l/cosh(t,) and E = hzs,,(5)/2m*dz (7) the value of s&) allows the eigenvalues to he obtained, the two subscripts referring to the radial and angular quantum numbers. Finally, in order to factor the expression in the general form of equation ( 3) above, we have E -,,,,-…”

Electron waveguide devices

“…The difficulties summarized above suggest that the prospects of transport-type electron waveguide devices are not very good [13].…”