Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography

Yokoya, Takayoshi; Terashima, Kazuhiko; Takeda, A.; Fukura, Tetsushi; Fujiwara, Hirokazu; Matsuki, Takayuki; Kinoshita, Toyohiko; Kato, Hiromitsu; Yamasaki, Satoshi; Oguchi, Tamio; Wakita, Takanori; Muraoka, Yuji; Matsushita, Teruo

doi:10.1021/acs.nanolett.9b01481

Cited by 32 publications

(17 citation statements)

References 35 publications

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“…For the crystal structure analysis, we use white neutron holography, − a kind of atomic resolution holography that can directly reveal a three-dimensional local structure around a dopant without any structure model. The white neutron holography exhibits higher sensitivity to light elements, such as hydrogen, B, and oxygen, compared with X-ray fluorescence holography − and photoelectron holography. − Thanks to the white neutron holography, we successfully revealed that the B-doping site in the Mg 2 Si SCs is the Mg site . Similarly, we determine the B-doping site in the Mg 2 Sn SCs using the white neutron holography.…”

Section: Introductionmentioning

confidence: 91%

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals

Saito

Hayashi

Huang

et al. 2021

ACS Appl. Energy Mater.

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The development of thermoelectric (TE) materials, which can directly convert waste heat into electricity, is vital to reduce the use of fossil fuels. Mg 2 Sn and Mg 2 Si are promising TE materials because of their superior TE performance. In this study, for future improvement of the TE performance, point defect engineering was applied to the Mg 2 Sn and Mg 2 Si single crystals (SCs) via boron (B) doping. Their crystal structures were analyzed via white neutron holography and SC X-ray diffraction. Moreover, nanostructures and TE properties of the B-doped Mg 2 Sn and Mg 2 Si SCs were investigated. The B-doping increased the chemical pressure on the Mg 2 Sn and Mg 2 Si SCs, leading to inducing vacancy defects as a point defect. No apparent change was observed in electronic transport, but thermal transport was significantly prevented. This study demonstrates that the vacancy defects can be controlled by the chemical pressure and can aid in achieving high TE performance for the Mg 2 Sn and Mg 2 Si SCs. KEYWORDS: Mg 2 Sn and Mg 2 Si single crystals, boron-doping, chemical pressure, point defects, thermoelectric properties

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Section: Introductionmentioning

confidence: 91%

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals

Saito

Hayashi

Huang

et al. 2021

ACS Appl. Energy Mater.

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“…Thus, we usually perform the DA30 angular mapping at different 2 and ' angles and then combine the maps analytically into a photoelectron hologram of a large solid angle (Matsushita et al, 2020). Some photoelectron holograms obtained by this method have already been reported (Tsutsui et al, 2017;Yokoya et al, 2019). In these reports, by taking advantage of the high photoemission intensity, photoelectron holograms of dopants in semiconductors were successfully observed for each chemically shifted core-level photoemission peak resolved by the high-energy-resolution DA30 analyzer.…”

Section: Figurementioning

confidence: 99%

Soft X-ray ARPES for three-dimensional crystals in the micrometre region

Matsuki¹,

Senba²,

Ohashi³

et al. 2021

J Synchrotron Radiat

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An endstation dedicated to angle-resolved photoemission spectroscopy (ARPES) using a soft X-ray microbeam has been developed at the beamline BL25SU of SPring-8. To obtain a high photoemission intensity, this endstation is optimized for measurements under the condition of grazing beam incidence to a sample surface, where the glancing angle is 5° or smaller. A Wolter mirror is used for focusing the soft X-rays. Even at the glancing angle of 5°, the smallest beam spot still having a sufficient photon flux for ARPES is almost round on the sample surface and the FWHM diameter is ∼5 µm. There is no need to change the sample orientation for performing k x − k y mapping by virtue of the electron lens with a deflector of the photoelectron analyzer, which makes it possible to keep the irradiation area unchanged. A partially cleaved surface area as small as ∼20 µm was made on an Si(111) wafer and ARPES measurements were performed. The results are presented.

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“…Therefore, the atomic structures and chemical states of the active and inactive dopant sites could be clarified. By adopting the experimental PEH and the scattering pattern extraction algorithm that one of the authors developed (the maximum entropy method/L1 regularization (SPEA-MEM/SPEA-L1) method), − it is possible to experimentally visualize the local 3D atomic structure around the dopant atoms. The schematic of this PEH is shown in Figure .…”

Section: Introductionmentioning

confidence: 99%

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

Tang

Takeuchi

Tanaka

et al. 2022

ACS Appl. Electron. Mater.

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We employed photoelectron spectroscopy (PES) and photoelectron holography (PEH) to clarify the atomic structures and chemical states in the active and inactive dopant states of Mg-doped GaN. Due to the lack of available direct evidence, this has been a controversial issue. From PES, we found that two chemical states existed in the Mg-doped GaN: One is an active dopant state, and the other is an inactive state. We employed PEH to investigate the two observed chemical states, indicating that the active state could be attributed to a Mg atom substituting a Ga atom in the Mg-doped GaN structure (MgGa). The inactive state, on the other hand, was considered to be a disordered structure, an amorphous structure, defects, and/or MgGa bonding with a H atom in that structure.

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Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography

Cited by 32 publications

References 35 publications

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals

Soft X-ray ARPES for three-dimensional crystals in the micrometre region

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

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Asymmetric Phosphorus Incorporation in Homoepitaxial P-Doped (111) Diamond Revealed by Photoelectron Holography

Cited by 32 publications

References 35 publications

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg2Sn and Mg2Si Single Crystals

Soft X-ray ARPES for three-dimensional crystals in the micrometre region

Direct Observation of Atomic Structures and Chemical States of Active and Inactive Dopant Sites in Mg-Doped GaN

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Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals

Chemical-Pressure-Induced Point Defects Enable Low Thermal Conductivity for Mg₂Sn and Mg₂Si Single Crystals