Asymmetric Effect of Oxygen Adsorption on Electron and Hole Mobilities in Bilayer Graphene: Long- and Short-Range Scattering Mechanisms

Silvestre, Ive; Morais, Evandro Augusto de; Melo, Angelica O.; Campos, Leonardo; Goncalves, A M B; Cadore, Alisson R.; Ferlauto, André S.; Chacham, H.; Mazzoni, Mário S. C.; Lacerda, Rodrigo G.

doi:10.1021/nn402653b

Cited by 35 publications

(40 citation statements)

References 49 publications

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“…At our ambient oxidizing conditions, graphene could accumulate O-species defects (adatoms) through its reaction with O 2 and H 2 O, leading to epoxides and/or hydroxyls 37 as well as chemisorbed and/or physisorbed O 2 molecules 38 ( Supplementary Fig. 7).…”

Section: Resultsmentioning

confidence: 99%

Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

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The next technological leap forward will be enabled by new materials and inventive means of manipulating them. Among the array of candidate materials, graphene has garnered much attention; however, due to the absence of a semiconducting gap, the realization of graphene-based devices often requires complex processing and design. Spatially controlled local potentials, for example, achieved through lithographically defined split-gate configurations, present a possible route to take advantage of this exciting two-dimensional material. Here we demonstrate carrier density modulation in graphene through coupling to an adjacent ferroelectric polarization to create spatially defined potential steps at 180°-domain walls rather than fabrication of local gate electrodes. Periodic arrays of p-i junctions are demonstrated in air (gate tunable to p-n junctions) and density functional theory reveals that the origin of the potential steps is a complex interplay between polarization, chemistry, and defect structures in the graphene/ferroelectric couple.

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Section: Resultsmentioning

confidence: 99%

Ferroelectrically driven spatial carrier density modulation in graphene

et al. 2015

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“…Furthermore, the ambipolar character of charge conduction and the possibility to dope Gr have also been of particular interest for devices fabrication . In this context, different doping strategies have been highlighted starting from chemical doping during Gr production, after production thermal doping, irradiation induced doping, and adsorption induced doping . A relevant role of the substrate in the doping effect has been guessed and it has been suggested that free standing Gr is subject to minor efficiency of doping as compared to Gr opportunely supported .…”

Section: Introductionmentioning

confidence: 99%

Graphene‐SiO₂ Interaction from Composites to Doping

Armano

Buscarino

Cannas

et al. 2019

Physica Status Solidi (a)

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An overview of the interaction between monolayer graphene and SiO2 dielectric substrate is reported focusing on the effect this latter has on doping and strain induced by thermal treatments in controlled atmosphere. The disentanglement of strain and doping is highlighted and the comparison with another dielectric substrate of Al2O3 evidences the critical role that the substrate has in the electronic properties of graphene. The reported results pave the way for microelectronic devices based on graphene on dielectrics and for Fermi level tuning in composites of graphene and nanoparticles.

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“…By annealing at T ¼ 390 K for different times (t), we find that the Hall mobility decreases from 0.155 m 2 /Vs for t ¼ 0 s (i.e., before annealing) to 0.118 m 2 /Vs for t ¼ 600 s. This may result from the O 2 desorption, as has been observed in bilayer graphene. 26 The decrease in the Hall mobility is expected to suppress the classical linear MR. Indeed, as shown in Fig.…”

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confidence: 99%