Asymmetric Cracking in III–V Compounds

Olsen, G.H.; Abrahams, M. S.; Zamerowski, T. J.

doi:10.1149/1.2401762

Cited by 112 publications

(24 citation statements)

References 12 publications

(30 reference statements)

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“…In most cases some form of defect is required to amplify the stress, allowing cracks to nucleate. Possible stress centres that can act as nucleation sites are reviewed elsewhere [6], but for example may include dislocations as suggested by Olsen et al [7]. Based on the AFM images in Figure 1 it is apparent that the initial cracks forming in the AlGaN epilayers are being nucleated at the cores of the screw and mixed threading dislocations propagating up through the epitaxial layer.…”

Section: Discussionmentioning

confidence: 86%

Crack Nucleation in AlGaN/GaN Heterostructures

et al. 2002

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The tensile strain in AlGaN layers on GaN is well established to lead to cracking if a critical thickness is reached, unless measures such as interlayers are applied to prevent their formation. However in devices, such as HFETs such an approach is impractical. Growth of AlGaN-GaN structures was carried out by MOVPE using a standard two stage process for the growth of the GaN on sapphire. The crack structures were examined by optical and atomic force microscopy. Studies on thin AlGaN layers on GaN close to the crack critical thickness show the stress centres from which the cracks propagate are threading dislocations with cracks often initially forming to link together these stress centres if they are in close proximity. These cracks then extend and "lock" into the generally observed 0 1 1 2 direction in more highly strained layers. A macroscopically uniform crack array is observed in these thin AlGaN samples.

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Section: Discussionmentioning

confidence: 86%

Crack Nucleation in AlGaN/GaN Heterostructures

et al. 2002

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“…4 and 5, cracks in tensile InGaAs/InP were observed mainly parallel to ͓110͔, while for the same system Franzosi et al 8 reported preferential crack formation along ͓11 0͔. Similarly Olsen et al 9 observed cracks only parallel to ͓11 0͔ in tensile InGaP/GaAs layers.…”

Section: Introductionmentioning

confidence: 92%

Crack formation in tensile InGaAs/InP layers

Natali¹,

Salvador²,

Berti³

et al. 2000

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A systematic investigation of crack formation has been performed in tensile In x Ga 1Ϫx As/InP layers with indium composition ranging from xϭ0.2 up to xϭ0.35 and thicknesses ranging from 8 nm to 2 m. It has been found that cracks form after growth and on a characteristic timescale of several days. The formation of cracks has been found to occur in a well defined thickness interval correlated to the residual strain during growth. Crack formation is favored along the ͓110͔ in-plane direction in samples with low indium composition. The results can be rationalized within a model which explicitly takes into account the fact that cracks form after growth.

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“…Woodbridge et al, 18 however, found that GaAs/Si has no clear preference for microcracks in either ͗011͘ directions, is similar to our result. Olsen et al 19 also reported asymmetric microcracks in epitaxial InGaP on GaAs when the tensile misfit exceeded ϳ0.15%, and asymmetric cracking was explained by invoking asymmetry of the distribution of dislocations involved in the microcrack formation.…”

Section: Resultsmentioning

confidence: 98%

Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxy

Li¹

1996

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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A study of strain relaxation in GaNxP1−x epilayers grown by chemical beam epitaxy, using a rf-plasma nitrogen radical beam source, tertiarybutylphosphine, and triethylgallium, is reported. Microcracks are observed in GaNxP1−x epilayers grown on GaP when the nitrogen composition is greater than 1.6%. Transmission electron microscopy results show that the tensile-strain relaxation in GaNxP1−x epilayers is initially relieved by microcrack formation without misfit dislocations. These microcracks penetrate through the interface, degrading the crystallinity of the GaP substrate. Microcracks formation can not be alleviated by adjusting the growth rate, growth temperature, V/III ratios, and forward plasma power, but they can be eliminated by reducing the growth area of the GaP substrate.

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Asymmetric Cracking in III–V Compounds

Cited by 112 publications

References 12 publications

Crack Nucleation in AlGaN/GaN Heterostructures

Crack Nucleation in AlGaN/GaN Heterostructures

Crack formation in tensile InGaAs/InP layers

Tensile strain relaxation in GaNxP1−x (x≤0.1) grown by chemical beam epitaxy

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