2009
DOI: 10.1109/icaict.2009.5372485
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Abstract: Özet: Dört ton giri li GaN HEMT'in Vgs'ye ba lı olarak IMD bile enleri arasındaki asimetrik durum ta ıyıcı frekansına ( 0 ) göre tespit edilmi tir. Ayrıca HEMT'in kritik çalı ma frekans aralı ı belirlenmi tir.Anahtar Kelimeler: HEMT, Asimetri, Volterra Serisi, ntermodülasyon. Abstract: Asymmetric condition among the IMD components with respect to gate to source voltage (Vgs) of four tone input GaN HEMT is determined which isbased on the carrier frequency ( 0 ). In addition to that, the critical operating freq…

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